• Journal of the Mineralogical Society of Korea
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• v.16 no.1
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• pp.91-106
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• 2003

XRD results on annealing studies of Na-feldspars (Amelia albite) show rapid changes in the lattice parameters of the $1073^{\circ}C$-heated samples owing to disordering of Al and Si as well as lattice distortions upon quenching of the heated specimens. While a low albite transformed to a high albite by 7-days annealing at $1073^{\circ}C$, it remains as an early intermediate albite even by 140-days annealing at $924^{\circ}C$ due to the slower Al-Si disordering rate. From the heated samples tweed structures of $100∼200\AA$ were typically observed by TEM, which showed different ways of development between the $1073^{\circ}C$ -heated one and the $923 ^{\circ}C$ -heated one. The former locally trans-farmed to rnicrostructures similar to albite twin, while the latter transformed to domain structures containing albite twin plane in the wider area. The origin of tweed structures is suggested to be formation of incipient twins (albite twin and pericline twin) to reduce the lattice instability which is increased by disordering of Al and Si as well as quenching.

• Journal of the Mineralogical Society of Korea
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• v.16 no.3
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• pp.233-243
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• 2003

Microstructures and chemistry of anorthoclase, a high-temperature phase of alkali feldspars, were studied using EPMA and TEM. BSE images of anorthoclase displayed mixtures of Na-rich areas and K-rich areas forming lamella of various sizes. EPMA analysis indicated that the Na-rich area is composed of Ab: 81%, Or: 3% and An: 11% in average, while the K-rich area is composed of Ab: 45%, Or: 44% and An: 11 % in average. TEM analysis revealed albite with Albite twins in the Na-rich area, contrasting to mixtures of albite with fine Albite twins and orthoclase without twins, forming regular lamella of about 100 nm sizes, in the K-rich area. The [001] electron diffraction pattern of the K-rich area also indicated coexistence of the two phases. While streaking parallel to the (010)$^{*}$ direction appeared only in albite due to the twin structure, streaking parallel to the $(100)^{ *}$ direction appeared both in albite and orthoclase, probably due to strain on the interface as well as order-disorder phenomena of Al and Si. It is suggested that the reverse orientation of albite and orthoclase is caused by pole switching to reduce strain on their interfaces. Based on these observations and analyses, the mineral studied is identified as lower-temperature cryptoperthite rather than high-temperature anorthoclase, which has a midium degree of Al-Si ordering and $400^{\circ}C$∼$600^{\circ}C$ of estimated temperatures for the microstructure formation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.1
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• pp.45-50
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• 2012

This paper on analysis of roundness error after boring turning of Al-6061 materials with CNC lathe. Experiment applying turning parameters is based on experimental design method. A design and analysis of experiments is conducted to study the effects of these parameters on the roundness error using the S/N ratio and analysis of ANOVA. Multiple linear regression analysis is applied to compare experimental with predicted data in consideration of roundness error. To fixation pressure and the opening which are a turning parameter, the cutting depth and feed speed respected the objective attainment of dissertation and to be applied the result they investigated.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.55-55
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• 2003

최근 높은 해상도의 평판 디스플레이 장치 특히 차세대 TFT-LCD를 개발하기 위해서는 건식식각공정의 개발이 필수 불가결하며 이는 플라즈마 공정장치의 대면적화가 가능해야 한다. 따라서 산업계는 이러한 제조 조건에 알맞는 대면적 플라즈마 반응기 개발을 추구하고 있다. 이를 위해서는 건식식각공정의 개발이 필수 불가결하며 이를 위해선 플라즈마 공정장 치의 대면적화가 가능해야 한다. 이러한 대면적 공정을 위해서는 낮은 공정압력, 고밀도, 높은 플라즈마 균일도가 요구된다. 또한 이러한 대면적 고밀도 플라즈마에의 적용을 위하여 새로운 유도결합형 플라즈마 소오스의 개발이 진행되고 있으며, 안정적인 300mm웨이퍼 공정을 위하여 여러 형태의 안테나가 연구되어지고 있다. 그러나 차세대 TFT-LCD에 적용 가 능하게끔 기존의 ICP 소오스를 직접적으로 대면적화 하는데 있어서는 안테나의 인덕턴스의 값이 키지며, 유전물질의 두께 증가 및 그에 따른 재료비의 상슴에 의해 그 한계점을 나타 내었다. 본 연구에서는 차세대 TFT-LCD 및 POP 대면적 공정에 적용 가능한 고밀도 플라즈마를 발생시키기 위해서 내장형 유도결합형 선형 안테나를 사용하였다. 내장형 유도결합형 선형 안테나가 가지고 있는 고유의 정전기적 결합효과를 최소화시키기 위해 직사각형모양의 플라즈마 챔버(830mm*1,020mm)에서 영구자석을 사용하였다. 영구자석을 사용하여 외부자 장을 인가하였을 때가, 그럴지 않은 때보다 RF 안테나에 걸리는 코일의 전압을 낮춰주었으며, 영구자석의 배열에 따라 코일의 인덕턴스의 값이 크게 변함을 알 수 있었다. 그리고, 최적화된 자장의 배열은 플라즈마의 이온밀도를 증가시켰으며, 플라즈마 균일도 또한 10% 이 내로 유지됨을 알 수 있었다. 따른 식각 메커니즘에 대하여 알아보고자 하였다. $CF_4/Cl_2$ gas chemistry 에 첨 가 가스로 $N_2$와 Ar을 첨 가할 경 우 텅 스텐 박막과 하부 layer 간의 etch selectivity 증가는 관찰되지 않았으며, 반면에 첨가 가스로 $O_2$를 사용할 경우, $O_2$의 첨가량이 증가함에 따라 etch s selectivity 는 계속적으로 증가렴을 관찰할 수 있었다. 이는 $O_2$ 첨가에 따라 형성되는 WOF4 에 의한 텅스텐의 etch rates 의 감소에 비하여, $Si0_2$ 등의 형성에 의한 poly-Si etch rates 이 더욱 크게 감소하였기 때문으로 사료된다. W 과 poly-Si 의 식각 특성을 이해하기 위하여 X -ray photoelectron spectroscopy (XPS)를 사용하였으며, 식각 전후의 etch depth 를 측정하기 위하여 stylus p pmfilometeT 를 이용하였다.X> 피막이 열처리 전후에 보아는 기계적 특성의 변화 양상은 열역학적으로 안정한 Wurzite-AlN의 석출에 따른 것으로 AlN 석출상의 크기에 의존하며, 또한 이러한 영향은 $(Ti_{1-x}AI_{x})N$ 피막에 존재하는 AI의 함량이 높고, 초기에 증착된 막의 업자 크기가 작을 수록 클 것으로 여겨진다. 그리고 환경의 의미의 차이에 따라 경관의 미학적 평가가 달라진 것으로 나타났다.corner$적 의도에 의한 경관구성의 일면을 확인할수 있지만 엄밀히 생각하여 보면 이러한 예의 경우도 최락의 총체적인 외형은 마찬가지로

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.33-38
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• 2001

We investigate the via-size dependance of as-electroplated- and reflow-bump shapes for realizing both high-density and high-aspect ratio of solder bump. The solder bump is fabricated by subsequent processes as follows. After sputtering a TiW/Al electrode on a 5-inch Si-wafer, a thick photoresist for via formation it obtained by multiple-codling method and then vias with various diameters are defined by a conventional photolithography technique using a contact alinger with an I-line source. After via formation the under ball metallurgy (UBM) structure with Ti-adhesion and Cu-seed layers is sputtered on a sample. Cu-layer and Sn/pb-layer with a competition ratio of 6 to 4 are electroplated by a selective electroplating method. The reflow-bump diameters at bottom are unchanged, compared with as-electroplated diameters. As-electroplated- and reflow-bump shapes, however, depend significantly on the via size. The heights of as-electroplated and reflow bumps increase with the larger cia, while the aspect ratio of bump decreases. The nearest bumps may be touched by decreasing the bump pitch in order to obtain high-density bump. The touching between the nearest bumps occurs during the overplating procedure rather than the reflowing procedure because the mushroom diameter formed by overplating is larger than the reflow-bump diameter. The arrangement as zig-zag rows can be effective for realizing the flip-chip-interconnect bump with both high-density and high-aspect ratio.

• Economic and Environmental Geology
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• v.25 no.3
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• pp.259-273
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• 1992

The Seongsan mine is one of the largest dickite deposits in the southwestern part of the Korean Peninsula. The main constithent minerals of the ore are dickite and quartz with accessory alunite, kaolinite and sericite. The geology around the Seongsan mine consists mainly of the late Cretaceous felsic volcanic rocks. In the studied area, these rocks make a synclinal structure with an axis of E-W direction plunging to the east. Most of the felsic volcanic rocks have undergone extensive hydrothermal alteration. The hydrothermally altered rocks can be classified into the following zones: Dickite, Dickite-Quartz, Quartz, Sericite, Albite and Chlorite zones, from the center to the margin of the alteration mass. Such zonal arrangement of altered rocks suggests that the country rocks, most of which are upper part of the rhyolite and welded tuff, were altered by strongly acid hydrothermal solutions. It is reasonable to consider that initial gas and solution containing $H_2S$ and other compounds were oxidized near the surface, and formed hydrothermal sulfuric acid solutions. The mineralogical and chemical changes of the altered rocks were investigated using various methods, and chemical composition of fifty-six samples of the altered rocks were obtained by wet chemical analysis and X.R.F. methods. On the basis of these analyses, it was found that some components such as $SiO_2$, $Al_2O_3$, $Fe_2O_3$, CaO, MgO, $K_2O$, $Na_2O$ and $TiO_2$ were mobilized considerably from the original rocks. The formation temperature of the deposits was estimated as higher than $200^{\circ}C$ from fluid inclusion study of samples taken from the Quartz zone. On the basis of the chemical composition data on rocks and minerals and estimated temperatures, the hydrothermal solutions responsible for the formation of the Seongsan dickite deposits were estimated to have the composition: $m_{K^+}=0.003$, $m_{Na^+}=0.097$, $m_{SiO_2(aq.)}=0.008$ and pH=5.0, here "m" represents the molality (mole/kg $H_2O$).