• 대한금속재료학회지
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• 제49권3호
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• pp.256-263
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• 2011

We have synthesized Al-Co/AlN-Co multilayer films with different layer thicknesses by using a Two-Facing Target Type dc Sputtering (TFTS) system. The deposited films were annealed isothermally at different temperatures and their microstructure, magnetic properties and resistivity were investigated. The magnetization of the as-deposited films was found to be very small, irrespective of layer thickness. It was found that the annealing conditions and layer thickness ratio of Al-Co to AlN-Co (LTR) were able to control the microstructure, as well as the physical properties of the prepared films. The resistivity and magnetization increased and the coercivity decreased with a decreasing LTR. A high resistivity of 2500 ${\mu}{\Omega}-cm$, a magnetization of 360 $emu/cm^3$, and a coercivity of 5 Oe were obtained for the films with LTR=0.175.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.71-72
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• 2008

In this paper, the effect of thermal annealing on surface acoustic wave (SAW) properties of aluminum nitride (AlN) films were described. The films were fabricated on Si substrates by using Pulsed Reactive Magnetron Sputtering System. The SAW properties of $600^{\circ}C$-annealed AlN films were better than those of both $900^{\circ}C$-annealed AlN films and as-deposited ones. Their SAW velocities (Raleigh mode) and insertion losses were about 5212 m/s and 16.19 dB at $600^{\circ}C$ with the wavelength of $40{\mu}m$. The dependence of characteristics of AlN films on annealing conditions were also evaluated by using Fourier Transform-Infrared Spectroscopy (FT-IR) Spectrums and Atomic Force Microscopy (AFM).

• 한국재료학회지
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• 제16권7호
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• pp.449-454
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• 2006

Al-doped zinc oxide (ZnO:Al) films for transparent electrodes in thin film solar cells were deposited on glass substrates at a low temperature of $200^{\circ}C$ by rf magnetron sputtering. The transmittance of the ZnO:Al films in the visible range was 87%. The lowest resistivity of the ZnO:Al films was about $5.8{\times}10^{-4}{\Omega}$ cm at the Al content of 2.5 wt%. After deposition, the surface of ZnO:Al films were etched in dilute HCl (0.5%) for the investigation of the change in the electrical properties and the surface morphology due to etching.

• 열처리공학회지
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• 제13권6호
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• pp.398-404
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• 2000

The Ti-Al-V-N films have been deposited on various substrates by d.c and r.f reactive magnetron sputtering from a Ti-6Al-4V alloy target in mixed $Ar-N_2$ discharges. The films were investigated by means of XRD, AES, SEM/EDX, microhardness, TG and scratch test. The XRD and SEM results indicated that the films were of single B1 NaCl phase having dense columnar structure with the (111) preferred orientation. The composition of Ti-Al-V-N film was the Ti-7.1Al-4.3V-N(wt%) films. Adhesion and microhardness of Ti-Al-V-N films deposited by r.f magnetron sputtering method were better than those deposited by d.c magnetron sputtering method. The anti-oxidation properties of Ti-Al-V-N films were also superior to that of Ti-N film deposited by the same deposition conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.111-114
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• 2000

Growth characteristics and microstructure of AlN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• 열처리공학회지
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• 제18권5호
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• pp.281-287
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• 2005

Titanium aluminium nitride((TiAl)N) film is anticipated as an advanced coating film with wear resistance used for drills, bites etc. and with corrosion resistance at a high temperature. In this study, (TiAl)N thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773 K by using a two-facing-targets type DC sputtering system in a mixture Ar and $N_2$ gases. Atomic compositions of the binary Ti-Al alloy target is Al-rich (25Ti-75Al (atm%)). Process parameters such as precursor volume %, substrate temperature and Ar/$N_2$ gas ratio were optimized. The crystallization processes and phase transformations of (TiAl)N thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy. The microhardness of (TiAl)N thin films were measured by a dynamic hardness tester. The films obtained with Ar/$N_2$ gas ratio of 1:3 and at 673 K substrate temperature showed the highest microhardness of $H_v$ 810. The crystallized and phase transformations of (TiAl)N thin films were $Ti_2AlN+AlN{\rightarrow}TiN+AlN$ for Ar/$N_2$ gas ratio of 1:3, $Ti_2AlN+AlN{\rightarrow}TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 1:1 and $TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN{\rightarrow}Ti_2AlN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 3:1. The above results are discussed in terms of crystallized phases and microhardness.

• 한국재료학회지
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• 제11권12호
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• pp.1080-1085
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• 2001

Dielectric properties and leakage current characteristics of 100 nm-thick $Ta_2O_5/Al_2O_3$multilayer thin films, which were fabricated by reactive sputtering of$Al_2O_3$and$Ta_2O_5$ successively on top of each other for total 9 layers, have been investigated with variation of the$Al_2O_3$content$(i.e,\;Ta_2O_5/Al_2O_3 \;thickness\;ratio)$.$Ta_2O_5/Al_2O_3$films were amorphous regardless of the$Al_2O_3$content. With increasing the$Al_2O_3$content from 0% to 100%, refractive index of the $Ta_2O_5/Al_2O_3$films decreased linearly from 2.03 to 1.56 and dielectric constant was lowered from 23.9 to 7.7 Variation of the dielectric constant with the$Al_2O_3$content was in good agreement with the behavior that was obtained by assuming parallel capacitors of$Al_2O_3$and Ta_2O_5$. Leakage current characteristics of $Ta_2O_5/Al_2O_3$ multilayer films were superior to those of $Ta_2O_5$ and$Al_2O_3$films. $Ta_2O_5/Al_2O_3$ films of 5% and 10%$Al_2O_3$content exhibited excellent leakage current densities which were lower than $10^{-7} A/cm^2$ at 1MV/cm.

• 한국표면공학회지
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• 제47권4호
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• pp.186-191
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• 2014

Double layer films which consisted of aluminum(Al) and magnesium(Mg) have been prepared by e-beam deposition. The structure, alloy phase, and corrosion resistance of the prepared films were investigated before and after heat treatment. The first (bottom) layer fixed with Al, and the thickness ratio between Al and Mg layers has been changed from 1 : 1 to 5 : 1, respectively. Total thickness of Al-Mg film was fixed at $3{\mu}m$. The cold-rolled steel sheet was used as a substrate. Heat treatment was fulfilled in an nitrogen atmosphere at the temperature of $400^{\circ}C$ for 2, 3 and 10 min. Surface morphology of as-deposited Al-Mg film having Mg top layer showed plate-like structure. The morphology was not changed even after heat treatment. However, cross-sectional morphology of Al-Mg films was drastically changed after heat treatment, especially for the samples heat treated for 10 min. The morphology of as-deposited films showed columnar structure, while featureless structure of the films appeared after heat treatment. The x-ray diffraction data for as-deposited Al-Mg films showed only pure Al and Mg peaks. However, Al-Mg alloy peaks such as $Al_3Mg_2$ and $Al_{12}Mg_{17}$ appeared after heat treatment of the films. It is believed that the formation of Al-Mg alloy phase affected the structure change of Al-Mg film. It was found that the corrosion resistance of Al-Mg film was increased after heat treatment.

• 한국결정성장학회지
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• 제16권2호
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• pp.59-65
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• 2006

Al이 첨가된 ZnO(ZnO : Al) 박막과 F이 첨가된 ZnO(ZnO : F) 박막을 sol-gel 법을 이용하여 glass 기판위에 코팅하였다. 공통적으로 (002)면의 c-축 배향성을 보였지만 I(002)/[I(002) + I(101)]와 FWHM(full width at half-maximum) 값은 차이를 보였다. 특히 입자크기에 있어서는 ZnO : Al 박막에서 첨가농도가 증가함에 따라 입자크기가 감소한 반면 ZnO : F 박막에서는 F 3 at%까지 입자크기가 증가하다가 그 이후로 다시 감소하는 경향을 보였다. 진기적 성질의 측정을 위해서 Hall effect measurement를 이용하였는데 ZnO : Al 박막의 경우 Al 1 at%에서 비저항이 $2.9{\times}10^{-2}{\Omega}cm$ 이었고 ZnO : F에서는 F 3 at%에서 $3.3{\times}10^{-1}{\Omega}cm$의 값을 보였다. 또한 ZnO : F 박막은 ZnO : Al 박막에 비해서 캐리어 농도는 낮았지만(ZnO : Al $4.8{\times}10^{18}cm^{-3}$, ZnO : F $3.9{\times}10^{16}cm^{-3}$) 이동도에 있어서 상당히 큰 값(ZnO : Al $45cm^2/Vs$ ZnO:F $495cm^2/Vs$)을 보였다. 가시광선 영역에서의 평균 광투과도에 있어서는 ZnO : Al 박막에서 $86{\sim}90%$의 값을 보였지만 ZnO : F에서는 $77{\sim}85%$로 상대적으로 낮은 광투과도를 나타내었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.181-185
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• 2007

We report on our material and process research on ZnO:Al films and on our investigations on wet chemical etching using a variety of etching solutions. We achieve resistivity as low as $750{\mu}{\Omega}cm$ for ZnO:Al films with film thickness of 140 nm. Etching with phosphorous acid allows for accurate fine patterning of the ZnO:Al films on glass substrates.