• Title/Summary/Keyword: Al evaporation

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Recovery of $\alpha$-iron from converter dust in a steelmaking factory (제철소 전노 dust로부터 철분강 회수에 관한 연구)

  • 김미성;김미성;오재현;김태동
    • Resources Recycling
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    • v.2 no.2
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    • pp.27-38
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    • 1993
  • In this study, we investigated the grinding and sedimentation(elutriation) process of the dusts for the effective separation of high purity iron and iron oxides. For characterization of the dust, particle size distribution and chemical composition, were examined. The results obtained in this study may be summarized as follows : 1. The converter CF(clarifier) dust of the Pohang 1st, 2nd steel making factory and EC(Evaporation Cooler), EP(Eltrostatic precititator) dust of the Kwangyang 2nd steel making factory are composed $\alpha$-Fe(21~50%), FeO(wustite)$Fe_3$$O_4$(magnetite), $Fe_2$$O_3$, CaO, $Al_2$$O_3$, $SiO_2$, and etc. 2. Pure iron has ductile characteristic in nature, particle size of the pure iron increase by increasing the grinding time. On the other hand, it is conformed that bo고 particles of hematite and magnetite become less than 325 mesh after 10 minutes grinding. 3. By applying the elutriation technique for the EC dust of the Kwangyang 2nd steel making factory, the iron powder of high content more than 99.17% of pure Fe was recovered with 37.8% yield at grinding time for 40 minutes. 4. By applying the elutriation technique for the CF dust of the Pohang 2nd steel making factory, the iron powder of high content more than 98.38% of pure Fe was recovered with 44.42% yield at grinding time for 40 minutes. 5. When magnetic separation was performed using plastic bonding magnet of 70 gauss, more than 98% Fe grade of iron powder was recovered in the size range +65 -200 mesh but the recovery of it was low.

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Study on the Casting Technology and Restoration of "Sangpyong Tongbo" (상평통보 주조와 복원기술연구)

  • Yun, Yong-hyun;Cho, Nam-chul;Jeong, Yeong-sang;Lim, In-ho
    • Korean Journal of Heritage: History & Science
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    • v.47 no.4
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    • pp.224-243
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    • 2014
  • This study examined the materials and casting technology(cast, alloy, etc.) used in the manufacturing of bronze artifacts based on old literature such as Yongjae Chonghwa, Cheongong Geamul, and The Korea Review. In the casting experiment for restoration of Sangpyong Tongbo, a bronze and brass mother coin mold was made using the sand mold casting method described in The Korea Review. The cast was comprised of the original mold plate frame, wooden frame, and molding sand. Depending on the material of the outer frame, which contains the molding sand, the original mold plate frame can be either a wooden frame or steel frame. For the molding sand, light yellow-colored sand of the Jeonbuk Iri region was used. Next, the composition of the mother alloy used in the restoration of Sangpyong Tongbo was studied. In consideration of the evaporation of tin and lead during actual restoration, the composition of Cu 60%, Zn 30%, and Pb 10% for brass as stated in The Korea Review was modified to Cu 60%, Zn 35%, and Pb 15%. For bronze, based on the composition of Cu 80%, Sn 6%, and Pb 14% used for Haedong Tongbo, the composition was set as Cu 80%, Sn 11%, and Pb 19%. The mother coin mold was restored by first creating a wooden father coin, making a cast from the wooden frame and basic steel frame, alloying, casting, and making a mother coin. Component analysis was conducted on the mother alloy of the restored Sangpyong Tongbo, and its primary and secondary casts. The bronze mother alloy saw a 5% increase in copper and 4% reduction in lead. The brass parent alloy had a 5% increase in copper, but a 4% and 12% decrease in lead and tin respectively. Analysis of the primary and secondary mother coin molds using an energy dispersive spectrometer showed that the bronze mother coin mold had a reduced amount of lead, while the brass mother coin mold had less tin. This can be explained by the evaporation of lead and tin in the melting of the primary mother coin mold. In addition, the ${\alpha}$-phase and lead particles were found in the mother alloy of bronze and brass, as well as the microstructure of the primary and secondary coin molds. Impurities such as Al and Si were observed only in the brass mother coin mold.

Optical Property of Super-RENS Optical Recording Ge2Sb2Te5 Thin Films at High Temperature (초해상 광기록 Ge2Sb2Te5 박막의 고온광물성 연구)

  • Li, Xue-Zhe;Choi, Joong-Kyu;Lee, Jae-Heun;Byun, Young-Sup;Ryu, Jang-Wi;Kim, Sang-Youl;Kim, Soo-Kyung
    • Korean Journal of Optics and Photonics
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    • v.18 no.5
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    • pp.351-361
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    • 2007
  • The samples composed of a GST thin film and the protective layers of $ZnS-SiO_2$ or $Al_2O_3$ coated on c-Si substrate were prepared by using the magnetron sputtering method. Samples of three different structures were prepared, that is, i) the GST single film on c-Si substrate, ii) the GST film sandwiched by the protective $ZnS-SiO_2$ layers on c-Si substrate, and iii) the GST film sandwiched by $Al_2O_3$ protective layers on c-Si substrate. The ellipsometric constants in the temperature range from room temperature to $700^{\circ}C$ were obtained by using the in-situ ellipsometer equipped with a conventional heating chamber. The measured ellipsometric constants show strong variations versus temperature. The variation of ellipsometric constants at the temperature region higher than $300^{\circ}C$ shows different behaviors as the ambient medium is changed from in air to in vacuum or the protective layers are changed from $ZnS-SiO_2$ to $Al_2O_3$. Since the long heating time of 1-2 hours is believed to be the origin of the high temperature variation of ellipsometric constants upon the heating environment and the protective layers, a PRAM (Phase-Change Random Access Memory) recorder is introduced to reduce the heating time drastically. By using the PRAM recorder, the GST samples are heated up to $700^{\circ}C$ decomposed preventing its partial evaporation or chemical reactions with adjacent protective layers. The surface image obtained by SEM and the surface micro-roughness verified by AFM also confirmed that samples prepared by the PRAM recorder have smoother surface than the samples prepared by using the conventional heater.

Fabrication of Schottky Device Using Lead Sulfide Colloidal Quantum Dot

  • Kim, Jun-Kwan;Song, Jung-Hoon;An, Hye-Jin;Choi, Hye-Kyoung;Jeong, So-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.189-189
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    • 2012
  • Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

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Effects of sulfur treatments on metal/InP schottky contact and $Si_3$$N_4$/InP interfaces (황처리가 금속/InP Schootky 접촉과 $Si_3$$N_4$/InP 계면들에 미치는 영향)

  • Her, J.;Lim, H.;Kim, C.H.;Han, I.K.;Lee, J.I.;Kang, K.N.
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.12
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    • pp.56-63
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    • 1994
  • The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

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Interfacial reaction and Fermi level movements of p-type GaN covered by thin Pd/Ni and Ni/Pd films

  • 김종호;김종훈;강희재;김차연;임철준;서재명
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.115-115
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    • 1999
  • GaN는 직접천이형 wide band gap(3.4eV) 반도체로서 청색/자외선 발광소자 및 고출력 전자장비등에의 응용성 때문에 폭넓게 연구되고 있다. 이러한 넓은 분야의 응용을 위해서는 열 적으로 안정된 Ohmic contact을 반드시 실현되어야 한다. n-type GaN의 경우에는 GaN계면에서의 N vacancy가 n-type carrier로 작용하기 때문에 Ti, Al, 같은 금속을 접합하여 nitride를 형성함에 의해서 낮은 접촉저항을 갖는 Ohmic contact을 하기가 쉽다. 그러나 p-type의 경우에는 일 함수가 크고 n-type와 다르게 nitride가 형성되지 않는 금속이 Ohmic contact을 할 가능성이 많다. 시료는 HF(HF:H2O=1:1)에서 10분간 초음파 세척을 한 후 깨끗한 물에 충분히 헹구었다. 그런 후에 고순도 Ar 가스로 건조시켰다. Pd와 Ni은 열적 증착법(thermal evaporation)을 사용하여 p-GaN에 상온에서 증착하였다. 현 연구에서는 열처리에 의한 Pd의 clustering을 줄이기 위해서 wetting이 좋은 Ni을 Pd 증착 전과 후에 삽입하였으며, monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy)을 사용하여 열처리 전과 40$0^{\circ}C$, 52$0^{\circ}C$ 그리고 695$0^{\circ}C$에서 3분간 열처리 후의 온도에 따른 morphology 변화, 계면반응(interfacial reaction) 및 벤드 휨(band bending)을 비교 연구하였다. Nls core level peak를 사용한 band bending에서 Schottky barrier height는 Pd/Ni bi-layer 접합시 2.1eV를, Ni/Pd bi-layer의 경우에 2.01eV를 얻었으며, 이는 Pd와 Ni의 이상적인 Schottky barrier height 값 2.38eV, 2.35eV와 비교해 볼 때 매우 유사한 값임을 알 수 있다. 시료를 후열처리함에 의해 52$0^{\circ}C$까지는 barrier height는 큰 변화가 없으나, $650^{\circ}C$에서 3분 열처리 후에 0.36eV, 0.28eV 만큼 band가 더 ?을 알 수 있었다. Pd/Ni 및 Ni/Pd 접합시 $650^{\circ}C$까지 후 열 처리 과정에서 계면에서 matallic Ga은 온도에 비례하여 많은 양이 형성되어 표면으로 편석(segregation)되어지나, In-situ SAM을 이용한 depth profile을 통해서 Ni/Pd, Pd/Ni는 증착시 uniform하게 성장함을 알 수 있었으며, 후열처리 함에 의해서 점차적으로 morphology 의 변화가 일어나기 시작함을 볼 수 있었다. 이는 $650^{\circ}C$에서 열처리 한후의 ex-situ AFM을 통해서 재확인 할 수 있었다. 이상의 결과로부터 GaN에 Pd를 접합 시 심한 clustering이 형성되어 Ohoic contact에 문제가 있으나 Pd/Ni 혹은 Ni/Pd bi-layer를 사용함에 의해서 clustering의 크기를 줄일 수 있었다. Clustering의 크기는 Ni/Pd bi-layer의 경우가 작았으며, $650^{\circ}C$ 열처리 후에 barrier height는 Pd/Ni bi-layer의 경우에도 Ni의 영향을 받음을 알 수 있었다.

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AN EXPERIMENTAL STUDY OF THE EFFECTS OF ION BEAM HIKING ON CERAMO-METAL BONDING (이온선 혼합법이 도재와 금속의 결합에 미치는 영향에 관한 실험적 연구)

  • Hong, Joon-Pow;Woo, Yi-Hyung;Choi, Boo-Byung
    • The Journal of Korean Academy of Prosthodontics
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    • v.29 no.2
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    • pp.245-265
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    • 1991
  • The purpose of this study was to observe the changes of the elemental transmission and bond strength between the metal and porcelain according to various kinds of ion beam mixing method. ion beam mixing of $meta1/SiO_2$ (silica), $meta1/Al_2O_3$(alumina) interfaces causes reactions when the $Ar^+$ was implanted into bilayer thin films using a 100KeV accelerator which was designed and constructed for this study. A vacuum evaporator used in the $10^{-5}-10^{-6}$ Torr vacuum states for the evaporation. For this study, three kinds of porcelain metal selected, -precious, semiprecious, and non-precious. Silica and alumina were deposited to the metal by the vacuum evaporator, separately. One group was treated by two kinds of dose of the ion beam mixing $(1\times10^{16}ions/cm^2,\;5\times10^{15}ions/cm^2)$, and the other group was not mixed, and analyzed the effects of ion beam mixing. The analyses of bond strength, elemental transmissions were performed by the electron spectroscopy of chemical analysis (ESCA), light and scanning electron microscope, scratch test, and micro Vickers hardness tests. The finding led to the following conclusions. 1. In the scanning electron and light microscopic views, ion beam mixed specimens showed the ion beam mixed indentation. 2. In the micro Vickers hardness and scratch tests, ion beam mixed specimens showed higher strength than that of non mixed specimens, however, nonprecious metal showed a little change in the bond strength between mixed and non mixed specimens. 3. In the scratch test, ion beam mixed specimens showed higher shear strength than that of non treated specimens at the precious and semiprecious groups. 4. In the ESCA analysis, Au-O and Au-Si compounds were formed and transmission of the Au peak was found ion beam mixed $SiO_2/Au$ specimen, simultaneously, in the higher and lower bonded areas, and ion beam mixed $SiO_2/Ni-Cr$ specimen, oxygen, that was transmitted from $SiO_2\;to\;SiO_2/Ni-Cr$ interface combined with 12% of Ni at the interface.

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Analysis of Atmosphere-Ocean Interactions over South China Sea and its Relationship with Northeast Asian Precipitation Variability during Summer (남중국해의 여름철 대기-해양 상호작용과 동아시아 강수량의 상관성 분석)

  • Jang, Hye-Yeong;Yeh, Sang-Wook
    • Atmosphere
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    • v.23 no.3
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    • pp.283-291
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    • 2013
  • This study investigates the changes in the atmosphere-ocean interactions over the South China Sea (SCS) by analyzing their variables in the period of 1979~2011 during the boreal summer (June-July-August). It is found that a simultaneous correlation coefficient between sea surface temperature (SST) and precipitation over SCS during summer is significantly changed before and after the late-1990s. That is, the variation of precipitation over SCS is negatively (positively) correlated with the SST variations before (after) the late-1990s. Our further correlation analysis indicates that the atmospheric forcing of the SST is dominant before the late-1990s accompanying with wind-evaporation feedback and cloud-radiation feedback. After the late-1990s, in contrast, the SST forcing of the atmosphere through the latent heat flux from the ocean to the atmosphere is dominant. It is found that the change in the relationship of atmosphere-ocean interactions over SCS are associated with the changes in the relationship with Northeast Asian summer precipitation. In particular, a simultaneous correlation coefficient between the precipitation over SCS and Northeast Asia becomes stronger during after the late-1990s than before the late-1990s. We argue that the increase of the SST forcing of the atmosphere over SCS may lead a direct relationship of precipitation variations between SCS and Northeast Asia after the late-1990s.