• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.7
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• pp.829-835
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• 2010

This paper presents a disposable power generator for microfluidic devices; the power generator has a tubular PEMFC and a $H_2$ generator. The tubular PEMFC has a tubular MEA (diameter: 1.52 mm) that is supported by a spiral wire electrode. The $H_2$ generator supplied $H_2$ to the tubular PEMFC; $H_2$ was generated via the reaction of Al foil (27 mg) and 5 M NaOH (0.12 ml). The open circuit voltage and power density of a unit cell of the tubular PEMFC were 0.81 V and $16.4\;mW/cm^2$ (0.35 V), respectively. The $H_2$ generator generated 11.6 ml $H_2$ for 15min. The power generator was continuously operated for 15 min at 0.64 mW (0.71 V) and for 10 min at 1.06 mW (0.46 V). We experimentally verified that it is feasible to use the proposed power generator as a power source for microfluidic devices; in the experiment, an LED (2.5 mW; 1.8 V) was lit for 10 min by using three serially connected TPEMFCs and one $H_2$ generator.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.676-680
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• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.4 no.1
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• pp.33-40
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• 2006

The characteristics of the aluminum waste melting and the distribution of the radioactive nuclides have been investigated for the estimation on the volume reduction and the decontamination of the aluminum wastes from the decommissioning of the TRIGA MARK it and III research reactors at the Korea Atomic Energy Research Institute(KAERI). The aluminum wastes were melted with the use of the fluxes such as flux $A:NaCl-KCl-Na_3AlF_6$, flux B:NaCl-NaF-KF, flux $C:CaF_2$, and flux $D:LiF-KCl-BaCl_2$ in the DC graphite arc furnace. For the assessment of the distribution of the radioactive nuclides during the melting of the aluminum, the aluminum materials were contaminated by the surrogate nuclides such as cobalt(Co), cesium(Cs) and strontium(Sr). The fluidity of aluminum melt was increased with the addition of the fluxes, which has slight difference according to the type of fluxes. The formation of the slag during the aluminum melting added the flux type C and D was larger than that with the flux A and B. The rate of the slag formation linearly increased with increasing the flux concentration. The results of the XRD analysis showed that the surrogate nuclide was transferred to the slag, which can be easily separated from the melt and then they combined with aluminum oxide to form a more stable compound. The distribution ratio of cobalt in ingot to that in slag was more than 40% at all types of fluxes. Since vapor pressures of cesium and strontium were higher than those that of the host metals at the melting temperature, their removal efficiency from the ingot phase to the slag and the dust phase was by up to 98%.