• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.6
• /
• pp.248-252
• /
• 2008

To get a fine $LiFePO_4$ powder with high electrical conductivity, the influences of doping of aliovalent elements(Cr+B and Cr+Al) on electrical conductivity and of heat treatment conditions on particle size of the doped powders were studied. Two kinds of the doped powders $LiFe_{0.965}Cr_{0.03}B_{0.005}PO_4$ and $LiFe_{0.065}Cr_{0.03}Al_{0.005}PO_4$ were synthesized using mechanochemical milling and subsequent heat treatment at $675{\sim}750^{\circ}C$ for $5{\sim}10\;h$. The doping enhanced grain growth and electrical conductivity. The electrical conductivity at $30^{\circ}C$ was $1{\times}10^{-8}S/cm$ in the doped with Cr and Al, and $5{\times}10^{-10}S/cm$ in the undoped one.

• Korean Journal of Materials Research
• /
• v.22 no.11
• /
• pp.631-635
• /
• 2012

Nickel oxide was doped with a wide range of concentrations (mol%) of Aluminum (Al) by solvothermal synthesis; single-phased nano powder of nickel oxide was generated after calcination at$900^{\circ}C$. When the concentration of Al dopant was increased, the reduced intensity was confirmed through XRD analysis. Lattice parameters of the synthesized NiO powder were decreased after treatment of the dopant; parameters were increased when the concentration of Al was over the doping limit (5 mol% Al). The binding energy of $Ni^{2+}$ was chemically shifted to $Ni^{3+}$ by doping $Al^{3+}$ ion, as confirmed by the XPS analysis. The tilted structure of the synthesized NiO with 5 mol% Al dopant and the polycrystalline structure of the $Ni_{0.75}Al_{0.25}O$ were observed by HR-TEM analysis. The electrical conductivity of the newly synthesized NiO was highly improved by Al doping in the conductivity test. The electrical conductivity values of the commercial NiO and the synthesized NiO with 5 mol% Al dopant ($Ni_{0.95}Al_{0.05}O$) were 1,400 s/cm and 2,230 s/cm at $750^{\circ}C$, respectively. However, the electrical conductivity of the synthesized NiO with 10 mol% Al dopant ($Ni_{0.9}Al_{0.1}O$) decreased due to the scattering of free-electrons caused by the large number of impurity atoms; the electrical conductivity of $Ni_{0.9}Al_{0.1}O$ was 545 s/cm at $750^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1994.11a
• /
• pp.17-20
• /
• 1994

Electrical Chracteristics of ZnO doped with Al$_2$O$_3$were investigated using complexe impedence measurements. The electrical conductivity of ZnO samples increased whithin 0.5mol% of Al$_2$O$_3$ doping, but decreased abode 0.5mol%. The increase and decrease of electrical conductivity seem to be the effect of Al$_2$O$_3$ doner doping and increasement of the number of grain boundary ZnO, respectively.

• Journal of IKEEE
• /
• v.24 no.4
• /
• pp.1167-1171
• /
• 2020

In this work, we proposed a graded gate-doping structure to alleviate an electric field in p-GaN gate layer in order to improve the reliability of normally-off GaN power devices. In a TCAD simulation by Silvaco Atlas, a distribution of the graded p-type doping concentration was optimized to have a threshold voltage and an output current characteristics as same as the reference device with a uniform p-type gate doping. The reduction of an maximum electric field in p-GaN gate layer was observed and it suggests that the gate reliability of p-GaN gate HFETs can be improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.69-69
• /
• 2009

Al이 doping된 ZnO 투명전도막을 fusion 1737 기판위에 Sol- Gel법으로 제조하였다. 제조된 Sol은 48시간 이상 숙성하여 안정화 시킨 다음, 박막을 제조하여 doping한 Al의 at%에 따른 박막의 전기, 광학적 특성을 조사하였다. XRD 측정 결과 순수한 ZnO Sol로 제조된 박막의 경우보다 0.75at%의 Al을 첨가하였을 때 가장 강한 peak intensity를 얻을 수 있었으며, 또한 0.75at% 첨가 시 순수한 ZnO 투명전도막보다 3~4order 정도 낮은 비저항을 나타내었다. 광투과율은 Al의 첨가량에 관계없이 90%를 넘는 높은 값을 나타내었다.

• Proceedings of the IEEK Conference
• /
• 2003.07b
• /
• pp.999-1002
• /
• 2003

In this study, the white organic light emitting device was fabricated using ITO/a-NPD:DCM/a-NPD/BCP/Alq3/Al structure. Blue emission by a-NPD and orange emission by energy transfer between a-NPD and DCM embodied the white emission. The optimal structure of the white OLED is ITO/a-NPD:DCM(50$\square$)/a-NPD(150$\AA$)/BCP(100$\square$)/Alq$_3$(200$\square$)/Al. We varied the doping concentration of DCM properly and obtained high purity white emitting light. The CIE coordinate and maximum luminance of the devices was obtained (0.310, 0.333) and 400cd/$m^2$ at 11Volt.

• Korean Journal of Materials Research
• /
• v.14 no.8
• /
• pp.529-534
• /
• 2004

$Sr_{4}Al_{14}O_{25}$ was synthesized by solid state reaction with flux. $H_{3}BO_3$ was used to synthesize $SrO-Al_{2}O_{3}$ phosphor system as a flux. The effect of doping system such as Eu+Dy, Eu, and Ce on the luminescent properties of $Sr_{4}Al_{14}O_{25}$ was investigated. Both PL spectra of $Sr_{4}Al_{14}O_{25}$:Eu and $Sr_{4}Al_{14}O_{25}$:Eu+Dy excited at 390 nm showed greenish-blue emission at about 490 nm, while the emission wavelength was shifted to 400 nm by doping Ce. The reduction of $Eu^{3+}$ ions to $Eu^{2+}$ could be accomplished by the annealing process under $N_{2}^{+}$ vacuum atmosphere, and attributed to the emission at 490 nm. It is verified that $Sr_{4}Al_{14}O_{25}$:Eu phosphor is suitable for white LEDs became of a broad absorption band peaking at 390 nm.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.209-209
• /
• 2012

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An additional doping was not applied for heterojunction solar cells due to the spontaneous junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedding Si heterojunction solar cell provided significantly enhanced efficiency of 9.23% as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme of the effective TCO film-embedding heterojunction Si solar cells.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.28 no.6
• /
• pp.235-242
• /
• 2018

High temperature electrical conductivity of Aluminum Nitride (AlN) ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to various sintering conditions and MgO-dopant. When magnesium oxide is added as a dopant, liquid glass-film and crystalline phases such as spinel, perovskite are formed as second phases, which affects their electrical properties. According to high temperature impedance analysis, MgO doping leads to reduction of activation energy and electrical resistivity due to AlN grains. On the other hand, the activation energy and electrical resistivity due to grain boundary were increased by MgO doping. This is a result of the formation of liquid glass film in the grain boundary, which contains Mg ions, or the elevation of schottky barrier due to the precipitation of Mg in the grain boundary. For the annealed sample of MgO doped AlN, the electrical resistivity and activation energy were increased further compared to MgO doped AlN, which results from diffusion of Mg in the grains from grain boundary as shown in the microstructure.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1996.06a
• /
• pp.462-487
• /
• 1996

We report on the fourth and fifth harmonics generations of Nd:YAG laser radiation realized in CsLiB6O10(CLBO). The values of 500 mJ and 230 mJ at 266 nm and 213 nm were obtained from 2200 mJ of fundamental energy. Doping of CLBO has been carried out and the Al doping was found to give rise to an enhancement of mechanical and chemical properties.