• Applied Chemistry for Engineering
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• v.9 no.7
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• pp.1030-1035
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• 1998

The porous alumina membrane was prepared from aluminum metal(99.8%) by anodic oxidation using DC power supply of constant current mode in an aqueous solution of sulfuric acid. To prevent the chemical dissolution of alumina membrane, $Al_2(SO_4)_3$, $AlPO_4$ and $Al(NO_3)_3$ which could be considered to supply $Al^{3+}$ ions were added to electrolyte solution at a reaction temperature of $20^{\circ}C$ and cumulative charge of $150C/cm^2$. Effects of these additives on the formation of porous alumina membrane were evaluated under various electrolyte concentration(5~20 wt%) and current densities($10{\sim}50mA/cm^2$). The membrane surfaces which were prepared in electrolyte solution with all the additives except $Al_2(SO_4)_3$ were damaged. However, when $Al_2(SO_4)_3$ was added to the $H_2SO_4$ solution, an uniform surface of porous alumina was obtained. Also, it was shown that the pore size of membrane was nearly independent on the quantity of $Al_2(SO_4)_3$ added at same electrolyte concentration and current density.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.4
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• pp.157-161
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• 2006

InGaN layers on GaN templated sapphire (0001) substrates were grown by mixed-source hydride vapor phase epitaxy (HVPE) method. In order to get InGaN layers, Ga-mixed In metal and $NH_3$ gas were used as group III and group V source materials, respectively. The InGaN material was compounded from chemical reaction between $NH_3$ and indium-gallium chloride farmed by HCl flowed over metallic In mixed with Ga. The grown layers were confirmed to be InGaN ternary crystal alloys by X-ray photoelectron spectroscopy (XPS). In concentration of the InGaN layers grown by selective area growth (SAG) method was investigated by the photoluminescence (PL) and cathodoluminescence (CL) measurements. Indium concentration was estimated to be in the range 3 %. Moreover, as a new attempt in obtaining InAlGaN layers, the growth of the thick InAlGaN layers was performed by putting small amount of Ga and Al into the In source. We found the new results that the metallic In mixed with Ga (and Al) as a group III source material could be used in the growth process of the In(Al)GaN layers by the mixed-source HVPE method.

• Korean Journal of Plant Resources
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• v.20 no.1
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• pp.22-27
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• 2007

Effects of prunella vulgaris L., chrysanthemum indicum L. and pueraria Radix on plasma lipid composition and histological consideration were investigated in hyperlipidemic rats. Concentration of plasma ${\beta},-lipoprotein$ showed a tendence to decrease in prunella vulgaris L., chrysanthemum indicum L. and pueraria Radix treatment groups. However these values were showed not significantly different from control group. Concentration of plasma FFA in prunella vulgaris L., chrysanthemum indicum L. and pueraria Radix treatment groups showed a lower values compared to control group and concentration of plasma FFA of prunella vulgaris L. and pueraria Radix treatment group showed a lower values than prunella vulgaris L. and chrysanthemum indicum L. treatment group. Concentration of plasma glucose and triglyceride showed a tendence to decrease in prunella vulgaris L., chrysanthemum indicum L. and pueraria Radix treatment groups. However plasma glucose values showed not significantly different from control group. Plasma total cholesterol concentration showed a low and HDL-cholesterol concentration showed a high in prunella vulgaris L. and pueraria Radix treatment group. However LDL-cholesterol concentrations were not significantly different in treatment groups. Histological consideration of heart, liver and kidney in prunella vulgaris L. and pueraria Radix treatment groups showed a good features in fat accumulation condition than those of other treatment groups. However in the condition of high fat accumulation in tissues, heart, liver and kidney were showed a slight congestion and a bashed cell nucleus.

• Journal of Korean Society of Environmental Engineers
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• v.29 no.6
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• pp.654-661
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• 2007

The goal of this research was to identify the impact of silicate polymerization on the formation of insoluble aluminiumsilicate salts which could be a cause of irreversible fouling in the membrane process by lab-scale test. For this, the amount and characteristics of precipitates that were formed in six samples with different Al and Si concentration were analyzed. And the particles was also observed by SEM-EDS(Scanning Electron Microscope - Electron Dispersion Spectrophotometer) to compare morphology and ratio of Al and Si in each precipitates. Finally the reactive and nonreactive silicate contents in the solution and precipitates were analyzed to calculate silicate form content in each fraction. The amount of precipitates was in proportion to the total concentration of both element in solution. And the amount of insoluble particle that was not dissolved in the acid solution was recorded the highest in the sample 2 of which Si concentration was lower than the saturation concentration, 50 mg/L. The content of reactive silicate in precipitates was also recorded the highest value in sample 2 of which almost silicate form was reactive. When the silicate concentration is same, that value was recorded the highest in the sample with highest Al concentration. The SEM morphology of the precipitates was similar to that of Aluminiumhydroxide and the insoluble precipitates was not dissolved in acidic solution with pH 2.7 was able to observed only in sample 2. The ratio of Al and Si in the precipitates was ranged $0.48\sim3.14$, thai of sample 2 was recorded the highest value, 3.14. It is concluded that the insoluble aluminiumsilicate could be easily formed in the solution of which silicate exist as a reactive form and coexisting Al is sufficient.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.338-342
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• 2016

ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

• Journal of the Korean Ceramic Society
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• v.52 no.1
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• pp.56-60
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• 2015

Discontinuous, polycrystalline $Al_2O_3$-dispersed TZP fibers were prepared by the centrifugal spinning of a colloidal $ZrO_2$ sol containing Y and Al nitrates and poly(vinyl alcohol). Factors affecting the rheological properties of the sols, such as sol concentrations, aging, and the amounts and types of additives, were investigated by measuring the shear viscosities. The flow characteristics of the sols were studied in relation to the spinnability by measuring the viscosity with respect to the shear rate. The spinnability was obtained through the addition of a polymer which increases the viscosity to a range of optimum viscosity values for spinning. Aging the sols containing the additives did not noticeably change the sol viscosities at room temperature up to 30 days. The flow behavior of the spinnable sols progressively changed from nearly Newtonian to pseudoplastic with an increase in the sol concentration.

• Journal of Life Science
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• v.11 no.2
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• pp.153-158
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• 2001

To investigate the effects of soil acidification on growth of Impatiens balsamina L. plants were transplanted to acidified soils with H$_2$SO$_4$ solution. The concentrations of soluble Ca, Mg, K, Al and Mn in the acidified soils increased with increment of H$^{+}$ addition to the soil. In both species, the plant height and root length were inhibited by soil acidification, showing much severer inhibition in Impatiens balsamina L. than in Tagetes patula L., As the soil pH decreases, the growth of underground parts decreased greatly than that of above ground parts in both species. Total dry weight decreased with increased Al concentration as well as lowered soil pH in both plants. There was a strong positive correlation between relative total dry weight and molar (Ca+Mg+K) / Al ratio of the soil. The results suggest that molar(Ca+Mg+K)/ Al ratio of the soil may be useful indicator for assessing the critical load of acid deposition in herb species.s.

• Journal of the Korean institute of surface engineering
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• v.40 no.5
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• pp.214-218
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• 2007

The objective of this study is to evaluate the diffusion behavior of Al and Si from a coatings in the microstucture of Fe-Si steel. Steel samples deposited with Al-Si alloy are prepared by ion plating process, followed by annealing treatments for diffusion at $1050^{\circ}C$. Several intermetallic phases are found in the coatings and they are identified as Fe-Al and an orderd Fe-Si compounds. Series of different concentration profiles through the sample have been obtained and Si content reaches about 5 wt% in case of 90 minutes of diffusion time.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.97-98
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• 2007

DC magnetron sputtering법을 이용하여 다양한 $Al_2O_3:$ 함량비( 1, 2, 3 wt%)를 가진 고밀도 세라믹 타겟을 사용하여 기판온도 $RT{\sim}300^{\circ}C$에서 AZO박막을 제작하였다. $Al_2O_3:$함량 및 기판온도의 증가에 따라 AZO박막의 결정성은 향상됨을 확인할 수 있었다. 결과적으로 기판온도 $300^{\circ}C$에서 $Al_2O_3:$ 3 wt%를 함유한 AZO 타겟을 사용하여 증착한 AZO박막은 가시광 영역에서 85%이상의 높은 투과율과 $7.8{\times}10^{-4}{\Omega}cm$의 비저항 값을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.403-404
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• 2005

The conductivity of diamond like carbon films embedded with silver nanoclusters were investigated as a function of silver concentrations in the film. By increasing the concentration of silver in the film from 0 to 20 at% the conductivity varied from $10^{-13}$ to $10^2\;ohm^{-1}\;cm^{-1}$. The data have been discussed within the model of a dielectric matrix containing conductive inclusions. The conductivity data analysis using percolation theory has been showed that percolation threshold occurred at Ag percentage in the film $x_c$ =5 at %.