• Proceedings of the Korea Technology Innovation Society Conference
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• 1998.05a
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• pp.8-8
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• 1998

한 국가의 경쟁력은 여러 가지 생산요소들의 질적·양적 우위에 의해 결정되나, 그 중에서도 특히 기술이 체화된 인적자원이 경쟁력 확보의 핵심요소임은 재론의 여지가 없다. 과거 우리나라 급성장의 주요 원동력이었던 우수하고 풍부한 인력이 이제 더 이상 우리 경쟁력의 원천이 되지 못하고 있다. 무한경쟁시대를 이끌어갈 창의력과 지도력을 갖춘 고급기술인력이 부족하고, 우수한 기술인력이 과학기술계를 회피하고 있으며, 산업현장에서 실제문제를 해결할 수 있는 실천적 전문기술과 숙련된 기능을 제대로 갖춘 인력을 배출하지 못하고 있다. 이러한 기숙인력 양성의 문제들을 해결하기 위한 방안의 하나로서 일반대학과 별도로 기술인력양성을 전문으로 하는 학위과정 설치의 필요성이 대두되었으며, 1996년 교육개혁의 일환으로 단설대학원제도와 전문학위제도가 시행되기 시작하였다. 그동안 여러 분야에서 단설대학원 설립이 추진되었으며, 일부에서 운영이 시작되고 있으나 과학기술분야에서는 극히 일부의 사례만이 있을 뿐이고 아직 본격적으로 설립운영되고 있다고 보기 어렵다. 본고는 외국 공공연구기관에서 시행되는 단설대학원의 사례들을 조사 분석함으로써 우리나라 과학기술계 출연연구기관에서의 바람직한 운영모델을 제시하고자한다. 일본의 총합연구대학원대학과 연계대학원제도, 중국 국가연구소들의 학위수여제도, 프랑스 국가연구소들의 석·박사과정, 독일 연구기관들의 박사과정 등을 소개하며, 이 들의 특징과 장단점들을 비교한다. 이어서 우리나라에서 현재 진행되고 있는 현황을 분석하고, 과학기술계 출연연구기관의 단설대학원 설립의 방향과 활성화를 위한 개선방안 등을 제시한다. 보고하였다2) 이 경우 보호피막으로서 NiO 와 $LiCrO_2$가 작용하는데, $LiCrO_2$가 용융탄산염 중에서 보다 안정한 것으로 부터, Cr의 첨가가 내식성에 기여하는 것으로 판단하였다. 다음 단계 로서 Fe/Cr재료에 용-융탄산염 중에서 안정한 산화물을 형성하는 Al의 첨가효과를 검토하였다. Al의 첨가는 더욱 내식성을 향상시키는 것이 발견되었고, 약 4wt%의 첨가로 충분한 내식성을 가지 는 것을 보고 하였다. 그러나 이러한 안정한 산화물에 의한 내식성 향상은 전기진도도의 희생을 바탕으로 한 것으로서, 다읍 단계로서 Ti산화물의 반도체적인 특성을 이용하고자 제 4의 원소로서 Ti첨가를 시도하였다. 그러나 Fe/Cr/AVTi재료가 뛰어난 내식성을 가지는 것은 관찰되었으나, 전도도 향상에는 기여하지 못하는 것이 보고되었다. 현재 MCFC는 실용화를 위한 고성능화의 하나로서 가압하에서의 운전을 시도하고 있다. 이 러한 가압하에서의 운전은 기전력의 향상 및 전극반응의 촉진 등으로 출력의 향상을 가져오나. 현재 문제로 되고 있는 Cathode극인 NiO의 용해/석출 현상을 가속화하는 결과를 초래해, 이에대 한 대책으로서 Li-K보다 NiO의 용해가 적은 Li-Na탄산염으로의 전환이 진행되고 있다. 이러한 배경으로부터 Uchida그룹에서 개발한 FeiCr/AVTi재료와 현재 분리판 재료로 사용증인 SUS 310, S SUS 316재료에 대해. 산화성 분위기의 5기압까지의 가압하에서, Li-K, Li-Na탄산염에 대하여 부 식거동을 검토한 결과, 가압하에서 내식성이 향상되는 것이

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Journal of the Korean Electrochemical Society
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• v.16 no.3
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• pp.111-122
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• 2013

Sodium sulfur (NAS) battery is a high energy storage system (ESS). These days, as the use of renewable green energy like wind energy, solar energy and ocean energy is rapidly increasing, the demand of ESS is increasing and NAS battery is considered to be one of the most promising ESS. Since NAS battery has a high energy density(3 times of lead acid battery), long cycle life and no self-charge and discharge, it is a good candidate for ESS. A NAS battery consists of sulfur as the positive electrode, sodium as the negative electrode and ${\beta}$"-alumina as the electrolyte and a separator simultaneously. Since sulfur is an insulator, carbon felt should be used as conductor with sulfur and so the composition and property of the cathode could largely influence the cell performance and life cycle. Therefore, in this paper, the composition of NAS battery, the property of carbon felt and sodium polysulfides ($Na_2S_x$, intermediates of discharge), and the effects of these factors on cycle performance of cells are described in detail.

• The Journal of Korean Academy of Prosthodontics
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• v.33 no.3
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• pp.584-609
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• 1995

The purpose of this study was to evaluate the difference of the galvanic corrosion behaviour of the titanium in contact with gold alloy, silva-palladium alloy, and nickel-chromium alloy using the immersion and electrochemical method. And the effects of galvallit couples between titanium and the dental alloys were assessed for their usefulness as materials for superstructure. The immersion method was performed by measuring the amount of metal elementsreleased by Inductivey coupled plasma emission spectroscopy(ICPES) The specimen of fifteen titanium plates, the five gold alloy, five silver-palladium, five nickel-chromium plates, and twenty acrylic resin plates ware fabricated, and also the specimen of sixty titanium plugs, the thirty gold alloy, thirty silver-palladium, and nickelc-hromium plugs were made. Thereafter, each plug of gold alloy, silver-palladium, and nickel-chromium inserted into the the titanium and acrylic resin plate, and also titanium plug inserted into the acrylic resin plate. The combination specimens uf galvanic couples immersed in 70m1 artificial saliva solution, and also specimens of four type alloy(that is, titanium, gold, silver-palladium and nickel-chromium alloy) plugs were immersed solely in 70m1 artificial sativa solution. The amount of metal elements released was observed during 21 weeks in the interval of each seven week. The electrochemical method was performed using computer-controlled potentiosta(Autostat 251. Sycopel Sicentific Ltd., U.K). The wax patterns(diameter 11.0mm, thickness,in 1.5mm) of four dental casting alloys were casted by centrifugal method and embedded in self-curing acrylic resin to be about $1.0cm^2$ of exposed surface area. Embedded specimens were polished with silicone carbide paper to #2,000, and ultrasonically cleaned. The working electrode is the specimen of four dental casting alloys, the reference electrode is a saturated calmel electrode(SCE) and the ounter electrode is made of platinum plate. In the artificial saliva solution, the potential scanning was carried out starting from-700mV(SCE) TO +1,000mV(SCE) and the scan rate was 75mV/min. Each polarization curve of alloy was recorded automatically on a logrithmic graphic paper by XY recorder. From the polarization curves of each galvanic couple, corrosion potential and corrosion rates, that is, corrosion density were compared and order of corrosion tendency was determined. From the experiments, the following results were obtained : 1. In the case of immersing titanium, gold alloy, silver-palladium alloy, and nickel-chromium alloysolely in the artificial saliva solution(group 1, 2, 3, and 4), the total amount of metal elements released was that group 4 was greater about 2, 3 times than group 3, and about 7.8 times than group 2. In the case of group 1, the amount of titanium released was not found after 8 week(p<0.001). 2. In the case of galvanic couples of titanium in contact with alloy(group 5, 6), the total amount of metal elements released of group 5 and 6 was less than that of group 7, 8, 9, and 10(p<0.05). 3. In the case of galvanic couples of titanium in contact with silver-palladium alloy(group 7, 8), the total amount of metal elements released of group 7 was greater about twice than that of group 5, and that of group 8 was about 14 times than that of group 6(p<0.05). 4. In the case of galvanic couples of titanium in contact with nickel-chromium alloy(group 9, 10), the total amount of metal elements released of group 9 and 10 was greater about 1.8-3.2 times than that of group 7 and 8, and was greater about 4.3~25 times than that of group 5 and 6(p<0.05). 5. In the effect of galvanic corrosion according to the difference of the area ratio of cathode and anode, the total amount of metal elements released was that group 5 was greater about 4 times than group 6, group 8 was greater about twice than group 7, and group 10 was greater about 1.5 times than group 9(p<0.05). 6. In the effect of galvanic corrosion according to the elasped time during 21 week in the interval of each 7 week, the amount of metal elements released was decreased markedly in the case of galvanic couples of the titanium in contact with gold alloy and silver-palladium alloy but the total amount of nickel and beryllium released was not decreased markedly in the case of galvanic couples of the titanium in contact with nickel-chromium alloy(p<0.05). 7. In the case of galvanic couples of titanium in contact with gold alloy, galvanic current was lower than any other galvanic couple. 8. In the case of galvanic couples of titanium in contact with nickel-chromium alloy, galvanic current was highest among other galvanic couples.