• Korean Journal of Materials Research
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• v.31 no.3
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• pp.156-161
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• 2021

Cr-Si based alloys are not only excellent in corrosion resistance at high temperatures, but also have good wear resistance due to the formation of Cr3Si phase, therefore they are promising as metallic coating materials. Aluminum is often added to Cr-Si alloys to improve the oxidation resistance through which stable alumina surface film is formed. On the other hand, due to the addition of aluminum, various Al-containing phases may be formed and may negatively affect the heat resistance of the Cr-Si-Al alloys, so detailed investigation is required. In this study, two Cr-Si-Al alloys (high-Si & high-Al) were prepared in the form of cast ingots through a vacuum arc melting process and the microstructural changes after high temperature heating process were investigated. In the case of the cast high-Si alloy, a considerable amount of Cr3Si phase was formed, and its hardness was significantly higher than that of the cast high-Al alloy. Also, Al-rich phases (with the high Al/Cr ratio) were not found much compared to the high-Al alloy. Meanwhile, it was observed that the amount of the Al-rich phases reduced by the annealing heat treatment for both alloys. In the case of the high temperature heating at 1,400 ℃, no significant microstructural change was observed in the high Si alloy, but a little more coarse and segregated AlCr phases were found in the high Al alloy compared to the cast state.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.817-824
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• 1999

The $Al_2$$O_3$-SiC composite powder was prepared by Self-propagating High-Temperature Synthesis(SHS) process using $SiO_2$Al and C powders as raw material. The effects of the molar ratio in raw material, compaction pressure, initial temperature of reactants on the products and combustion process were studied. Self-propagating high temperature synthesis of $SiO_2$/Al/C system should be preheated above $400^{\circ}C$ owing to the low combustion temperature. As the result of the combustion reaction, the purity of final product became better than that of reactants. In this system, the optimum molar ratio of $SiO_2$:Al:C was 3.0:4.0:6.0. The free carbon was removed by roasting at $650^{\circ}C$ for 30min. In this study, pressureless sintering was very dffective both for controlling the disintegration of specimen with powder bed and for obtaining dense sintered-body at $1700^{\circ}C$. The sintered-body produced with hot-pressing was about 98% of the theoretical relative density.

• Journal of Korea Foundry Society
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• v.31 no.3
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• pp.130-136
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• 2011

Effects of GBF (gas bubbling filtration) treatment conditions and scrap ratio on the electric conductivity of a commercial pure aluminum for diecasting were investigated using by specific gravity and electrical conductivity measurement system, hydrogen gas analyzer, XRD, and EDS. Electrical conductivities of specimen mixed Al scrap ratio until 60% from 0% were decreased with increasing the precipitates amount and size of AlFeSi ternary intermetallic compound on the grain boundary as well as amount of porosity in the grain. On the other hand, electrical conductivities was reincreased gradually in spite of scrap ratio increase from 80% to 100%. Size of AlFeSi compound formed on the grain boundary were coarsened with the increament of scrap ratios untill 80% and GBF treatment time simultaneously.

• Applied Chemistry for Engineering
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• v.34 no.6
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• pp.619-625
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• 2023

In order to solve problems caused by the heat load of hypersonic aircraft, this study examined the optimization of the Si/Al ratio of the catalyst and nickel ion exchange to improve the performance of the hydrocarbon decomposition reaction (endothermic reaction). It was confirmed that the catalysts prepared through Si/Al ratio optimization and nickel ion exchange showed about 10% improvement in heat absorption performance compared to thermal cracking at 4 MPa and 550 ℃. FT-IR and NH₃-TPD analyses were found to identify factors affecting activity changes, and it was observed that the Si/Al ratio of the HZSM-5 catalyst was closely correlated with acid site development and catalytic activity. In addition, TGA and O₂-TPO analyses were conducted to observe the carbon deposition inhibition properties of the nickel-added catalyst.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.332-341
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• 1998

Reaction kinetics for the solid - state reaction of ${\alpha}-Al_2O_3$with amorphous $SiO_2$to produce mullite ($3Al_2O_3;{cdot};2SiO_2$) was studied in the temperature range of 1450~$1480^{\circ}C$. Rate of kinetic reaction were determined by using $SiO_2$- coated $Al_2O_3$ compact containing 28.16 wt.% $SiO_2$and heating the reactant mixtures in MgO at definite temperature for various times. Amount of products and unreacted reactants were determined by X-ray diffractometry. Data from the volume fraction and ratio of peak intensities of mullite indicated that the reaction of ${\alpha}-;Al_2O_3$ with $SiO_2$to form $3Al_2O_3\;{\cdot}\;2SiO_2$ start between 1450 and $1480^{\circ}C$. The activation energy for solid-state reaction was determined by using the Arrhenius equation; The activation energy was 31.9 kJ/mol.

• Journal of Powder Materials
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• v.1 no.2
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• pp.159-166
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• 1994

The variation of the microstructures and the mechanical properties with varying vacuum hot pressing temperature and pressure was investigated in PyM processed 20 vol%) SiCw/ 2124Al composites. As increasing the vacuum hot pressing temperature, the aspect ratio of whiskers and density of composites increased due to the softening of 2124Al matrix with the increased amount of liquid phase. The tensile strength of composite increased with increasing vacuum hot pressing temperature up to $570^{\circ}C$ and became saturated above $570^{\circ}C$, To attain the high densification of composites above 99%, the vacuum hot pressing pressure was needed to be above 70 MPa. However, the higher vacuum hot pressing pressure above 70 MPa was not effective to increase the tensile strength due to the reduced aspect ratio of SiC whiskers from damage of whiskers during vacuum hot pressing. A phenomenological equation to predict the tensile strength of $SiC_w$/2124AI composite was proposed as a function including two microstructural parameters, i.e. density of composites and aspect ratio of whiskers. The tensile strength of $SiC_w$/2124AI were found more sensitive to the porosity than other P/M materials due to the higher stress concentration and reduced load transfer efficiency by the pores locating at whisker/matrix interfaces.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.706-712
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• 1997

AlN(Aluminium Nitride) thin films were prepared using by RF sputtering method on the Si(100) and Si(111) substrates as the parameters of the substrate temperature, RF power, sputtering duration and the $N_2$/Ar ratio and investigated by X-ray diffraction, IR spectrometry, n&k analyzer. For the Si(100) substrate, the AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. For the Si(111) substrate, the (002) AlN thin films were obtained under the nitrogen of 100 vol.%. In case of the thin film prepared in the condition of above 60 vol.% of the nitrogen, the average value of the surface roughness of the film was 151$\AA$. From the changes of the half widths of E$_1$[TO] phonon bands at the wavenumber of 680$cm^{-1}$ /, it were compared of the crystallinities of the films which were grown under the different conditions. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40~60 vol.%. Its due to the nitridation of the Al target surface and getting low of the sputtering yield by the $N_2$/Ar ratio being increased.

• Journal of Korea Foundry Society
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• v.20 no.3
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• pp.197-207
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• 2000

Al-Si alloys were solidified in a rotating cylindrical mold by a vertical centrifugal casting process. Under a certain casting condition, there are four distinct zones such as the chill zone, the primary fine columnar zone, the equiaxed zone, and the secondary coarse columnar zone from the mold wall. The columnar-equiaxed transition (CET) and the equiaxed-columnar transition (ECT) were measured as functions of solute content, flow rate (mold velocity), pouring temperature and mold temperature. Within the critical value of solute content, as the flow rate increases, the columnar-equiaxed transition were found, but not the equiaxed-columnar transition. The aspect ratio of the primary columnar zone was more affected by the solute content than the flow rate. However the aspect ratio of the equiaxed zone was more affected by the flow rate than the solute content. The aspect ratio of the secondary columnar zone was affected by both the flow rate and the solute content.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2016.05a
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• pp.51-52
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• 2016

This paper researches the Chloride Binding of Cement Paste according to the Ca/Si and Ca/Al Ratio. The mechanisms of chloride ion binding are not completely known, although it is believed that Alumina contents in cementitious system have an important role. For changing cement paste composition, Ordinary Portland Cement(OPC) paste is substituted by Granulated Ground Blast Slag(GGBS). With increasing the ratio of GGBS substitution(Thus alumina contents is increasing), The chloride binding capacity has a tendency to increase of binding chloride ion capacity.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.211-211
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• 2012

The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.