• Title/Summary/Keyword: Al) thin film

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Selective Transmission Properties of Al-Ti Based Oxide Thin Films (Al-Ti계 산화물 박막의 조성에 따른 선택적 투과 특성)

  • Bang, Ki Su;Jeong, So Un;Lim, Jung Wook;Lee, Seung-Yun
    • Journal of the Korean Vacuum Society
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    • v.22 no.1
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    • pp.13-19
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    • 2013

  • It is expected that progress in building-integrated photovoltaic (BIPV) systems, improving the functionality and design of buildings, will be accelerated in the coming years. While the dye sensitized solar cell is considered one of the most important technologies in the BIPV field, the transparent silicon based thin film solar cell fabricated by thin film processes has drawn attention as a novel alternative. When the selective transmitting layer is applied to the solar cell, the conversion efficiency is improved due to the re-reflection of infrared light into an absorber layer with the transmission of visible light through the solar cell. In this work, we prepared Al-Ti based oxide thin films using cost-effective sputter deposition and examined their selective transmitting characteristics with various compositions. The transmittance and reflectance of the Al-Ti based oxide thin film changed with the variation of its composition, and the selective transmitting property was observed in the sample with the 25 nm-thick AlTiO layer. It is considered that the realization of transparent solar cells and the improvement of their conversion efficiency can be achieved by introducing the Al-Ti based selective transmitting layer.

  • https://doi.org/10.5757/JKVS.2013.22.1.13 인용 PDF KSCI

Fabrication of a Cu2ZnSn(S,Se)4 thin film solar cell with 9.24% efficiency from a sputtered metallic precursor by using S and Se pellets

  • Gang, Myeong-Gil;Hong, Chang-U;Yun, Jae-Ho;Gwak, Ji-Hye;An, Seung-Gyu;Mun, Jong-Ha;Kim, Jin-Hyeok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.86.2-86.2
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    • 2015

  • Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.

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Sputtering yield of the MgO thin film grown on the Cu substrate by using the focused ion beam (집속이온빔을 이용한 구리 기판위에 성장한 MgO 박막의 스퍼터링 수율)

  • 현정우;오현주;추동철;최은하;김태환;조광섭;강승언
    • Journal of the Korean Vacuum Society
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    • v.10 no.4
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    • pp.396-402
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    • 2001

  • MgO thin films with 1000 $\AA$ thickness were deposited on Cu substrates by using an electron gun evaporator at room temperature. A 1000 $\AA$ thick Al layer was deposited on the MgO for removing the charging effect of the MgO thin film during the measurements of the sputtering yields. A Ga ion liquid metal was used as the focused ion beam(FIB) source. The ion beam was focused by using double einzel lenses, and a deflector was employed to scan the ion beams into the MgO layer. Both currents of the secondary particle and the probe ion beam were measured, and they dramatically changed with varying the applied acceleration voltage of the source. The sputtering yield of the MgO layer was determined using the values of the analyzed probe current, the secondary particle current, and the net current. When the acceleration voltage of the FIB system was 15 kV, the sputtering yield of the MgO thin film was 0.30. The sputtering yield of the MgO thin film linearly increases with the acceleration voltage. These results indicate that the FIB system is promising for the measurements of the sputtering yield of the MgO thin film.

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