• Title/Summary/Keyword: AgSnO2

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Electrical properties of sintered Ag - $SnO_2$ composite materials (소결 Ag - $SnO_2$ 합금의 전기적 특성 연구)

  • Lee, Hee-Woong;Cho, Hae-Yong;Han, Se-Won;Yi, Dong-Yoon
    • Proceedings of the KIEE Conference
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    • 1987.11a
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    • pp.231-233
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    • 1987
  • A study has been made on the electrical properties of sintered Ag-$SnO_2$ composite materials. Hardness increased with $SnO_2$ contents increasing while the electrical conductivity decreased. The weight loss after are erosion test was decreased with $SnO_2$ contents increasing to 10 (w/o) $SnO_2$.

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The Effect of electron beam surface irradiation on the properties of SnO2/Ag/SnO2 thin films (전자빔 표면 조사에 따른 SnO2/Ag/SnO2 박막의 특성 연구)

  • Jang, Jin-Kyu;Kim, Hyun-Jin;Choi, Jae-Wook;Lee, Yeon-Hak;Kong, Young-Min;Heo, Sung-Bo;Kim, Yu-Sung;Kim, Daeil
    • Journal of Surface Science and Engineering
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    • v.54 no.6
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    • pp.302-306
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    • 2021
  • SnO2 30/Ag 15/SnO2 30 nm(SAS) tri-layer films were deposited on the glass substrates with RF and DC magnetron sputtering and then electron beam is irradiated on the surface to investigate the effect of electron bombardment on the opto-electrical performance of the films. electron beam irradiated tri-layer films at 1000 eV show a higher figure of merit of 2.72×10-3 Ω-1 than the as deposited films due to a high visible light transmittance of 72.1% and a low sheet resistance of 14.0 Ω/☐, respectively. From the observed results, it is concluded that the post-deposition electron irradiated SnO2 30/Ag 15/SnO2 30 nm tri-layer films can be used as a substitute for conventional transparent conducting oxide films in various opto-electrical applications.

Evolution of Interfacial Microstructure in Alumina and Ag-Cu-Zr-Sn Brazing Alloy (알루미나/Ag-Cu-Zr-Sn 브레이징 합금계면의 미세조직)

  • Kim, Jong-Heon;Yoo, Yeon-Chul
    • Transactions of Materials Processing
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    • v.7 no.5
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    • pp.481-488
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    • 1998
  • The active metal brazing was applied to bond Alumina and Ni-Cr steel by Ag-Cu-Zr-Sn alloy and the interfacial microstructure and reaction mechanism were investigated. Polycrystalline monoclinic $ZrO_2$ with a very fine grain of 100-150 nm formed at the alumina grain boundary contacted with Zr segregation layer at the interface. The $ZrO_2$ layer containing the inclusions and cracks were developed at the boundary of inclusion/$ZrO_2$ due to the difference in specific volume. The development of $ZrO_2$ at the interface was successfully explained by the preferential penetration of $ZrO_2$ at the interface was successfully explained by the preferential penetration of Zr atoms a higher concentration of oxygen and a high diffusion rate of Al ions into molten brazing alloy.

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The Effect of the Te on the Microstructure of Rapidly Solidification Ag-Sn-In Contact Material (급속응고한 Ag-Sn-In계 접점재료의 미세조직에 미치는 Te 의 영향)

  • Chang, Dae-Jung;Kwon, Gi-Bong;Kim, Young-Ju;Cho, Dae-Hyoung;Nam, Tae-Woon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.1
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    • pp.86-91
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    • 2007
  • Contact material is widely used as electrical parts. Ag-CdO has a good wear resistance and stable contact resistance. But the disadvantages of Ag-Cd alloy are coarse Cd oxides and harmful metal, Cd. Then Ag-Sn alloy that has stable and fine Sn oxide at high temperature has been developed. In order to investigate the effect of Te additional that affects the formation of the oxide layer on the surface and the formation of oxide in matrix Ag, we studied the microstructures and properties of Ag-Sn-In(-Te) material fabricated by rapid solidification process. The experimental procedure were melting using high frequency induction, melt spinning, and internal oxidation. Specimens were examined and analyzed by Transmission electron microscopy(TEM), energy dispersive X-ray spectroscopy(EDS) and Vickers hardness. As a result, internal oxidation was completed even at $600^{\circ}C$. Te forms coarse $In_{2}TeO_{6}$ phase and makes fine and well dispersed $SnO_{2}$ Phase. 0.3 wt% Te shows favorable properties.

투명 유연 AMOLED TV 구현을 위한 증착형 SnO2/Ag-Pd-Cu(APC)/SnO2 다층 투명 캐소드 박막 연구

  • Kim, Du-Hui;Kim, Han-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.181.2-181.2
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    • 2016
  • OLED 소자는 발광 방향에 따라 Bottom Emission 방식과 Top Emission 방식으로 나뉜다. 이 중 대면적 OLED TV 적용에 개구율이 더 높은 Top Emission방식을 선호하는 추세이다. 높은 개구율을 가진 Top Emission OLED소자를 위해서는 투명하고 전도성이 높은 캐소드가 중요하다. 본 연구에서는 Themal Evaporation 시스템을 이용하여 증착한 $SnO_2/Ag-Pd-Cu(APC)/SnO_2$ hybrid 전극의 특성을 연구하고 Oxide/Metal/Oxide(OMO) hybrid 박막의 bending mechanism을 제시하였다. base pressure는 $1{\times}10^{-6}Torr$로 고정하고 $SnO_2$ 박막은 0.34A / 0.32V, APC 박막은 0.46A / 0.40V의 power로 성막하였다. APC와 $SnO_2$의 두께를 변수로 OMO 전극을 제작하였고 그 전기적, 광학적 특성을 Hall measurement, UV/Visible spectroscopy을 이용하여 분석하고 Figure of merit 값을 바탕으로 최적 두께를 설정하였다. UPS(Ultraviolet Photoelectron Spectroscopy) 분석으로 $SnO_2/APC/SnO_2$ 전극의 일함수을 통해 투명 cathode로 쓰였을 때 $SnO_2$ 층이 buffer layer역할을 함을 확인하였다. XPS(X-ray photoelectron spectroscopy)를 이용하여 정성분석과 정량분석을 하였고 OMO hybrid 전극의 bending mechanism 연구를 위해 다양한 bending test (Inner/Outer dynamic fatigue test, twisting test, rolling test)를 진행하였다. 물리적 힘이 가해진 OMO hybrid 전극의 표면과 구조는 FE-SEM(Field Emission Scanning Electron Microscope) 분석을 통해서 확인할 수 있었다.

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The Effect of Misch Metal on the Microstructure of Rapidly solidified Ag-Sn-In Alloys (급속응고한 Ag-Sn-In 합금의 미세조직에 미치는 Misch Metal의 영향)

  • Chang, Dae-Jung;Nam, Tae-Woon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.6
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    • pp.561-565
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    • 2007
  • Because of a good wear resistance and a stable contact resistance, Ag-CdO is widely used as electrical contact material. But, the Cd-oxide mainly exists as a coarse particle and adversely affected to environment. As a reason, $Ag-SnO_2$ alloy has been developed. The Sn-oxide maintains stable and fine particle even at high temperature. In order to investigate the effect of Misch metal (Mm) additional that affects the formation of the oxide and the formation of fine matrix Ag, we studied the microstructures and properties of Ag-Sn-In(-Mm) material fabricated by rapid solidification process. The experimental procedure were melting using high frequency induction, melt spinning, and internal oxidation. The Mm addition makes Ag matrix more fine than no Mm addition. The reason is that the addition of Misch metal decreased a latent heat of fusion of alloy, as a result the rapid solidification effect of alloy is increased. The maximum hardness shows at 0.3 wt%Mm. after that the hardness is decreased until 0.4 wt% Mm, but still larger than no Mm addition alloy. At 0.5 wt% Mm alloy, the precipitation of Misch metal causes a decrease of hardness than no Mm addition alloy.

Effect of the Alloying Elements in Ag-Cu-Zr-X Brazing Alloy on the Microstructure and the Bond Strength of $Al_2O_3$/Ni-Cr Steel Brazed Joint (알루미나/니켈크롬강 접합체의 미세조직 및 접합강도에 미치는 Ag-Cu-Zr-X 브레이징 합금성분의 영향)

  • Kim, Jong-Heon;Yoo, Yeon-Chul
    • Transactions of Materials Processing
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    • v.7 no.5
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    • pp.465-473
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    • 1998
  • The effect of alloying elements of Ag-Cu-Zr-X brazing alloy on the microstructure and the bond strength of $Al_2O_3/Ni-Cr$ brazed steel joint was investigated. The reaction layer, $ZrO_2$ (a=5.146 ${\AA}$ , b=5.213 ${\AA}$ , c=5.311 ${\AA}$ )was formed at the interface of $Al_2O_3/Ni-Cr$ steel joint by the redox reaction between alumina and Zr. The addition of An and Al to the Ag-Cu-Zr brazing alloy gave rise to changes in the thickness of the reaction product layer and the morphology of the brazement. Sn caused the segregation of Zr was decreased b Al the $ZrO_2$ layer formed at the Ag-Cu-Zr-Al alloy was thinner than that of $ZrO_2$ formed at the Ag-Cu-Zr-An alloy. The fracture shear strength was strongly dependent on the microstructure of the brazement. Brazing with Ag-Cu-Zr-Sn alloy resulted in a better bond strength than with Ag-Cu-Zr or Ag-Cu-Zr-Al alloy.

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Antireflective ZTO/Ag bilayer-based transparent source and drain electrodes for highly transparent thin film transistors

  • Choe, Gwang-Hyeok;Kim, Han-Gi
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.110.2-110.2
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    • 2012
  • We reported on antireflective ZnSnO (ZTO)/Ag bilayer and ZTO/Ag/ZTO trilayer source/drain (S/D) electrodes for all-transparent ZTO channel based thin film transistors (TFTs). The ZTO/Ag bilayer is more transparent (83.71%) and effective source/drain (S/D) electrodes for the ZTO channel/Al2O3 gate dielectric/ITO gate electrode/glass structure than ZTO/Ag/ZTO trilayer because the bottom ZTO layer in the trilayer increasea contact resistance between S/D electrodes and ZTO channel layer and reduce the antireflection effect. The ZTO based all-transparent TFTs with ZTO/Ag bilayer S/D electrode showed a saturation mobility of 4.54cm2/Vs and switching property (1.31V/decade) comparable to TTFT with Ag S/D electrodes.

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