• Tribology and Lubricants
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• 제39권1호
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• pp.8-12
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• 2023

This study presents a molecular simulation of adhesion control between carbon nanotube (CNT) and Ag thin film deposited on silicon substrate. Rough and flat Ag thin film models were prepared to investigate the effect of surface roughness on adhesion force. Heat treatment was applied to the models to modify the adhesion characteristics of the Ag/CNT interface based on thermal wetting. Simulation results showed that the heat treatment altered the Ag thin film morphology by thermal wetting, causing an increase in contact area of Ag/CNT interface and the adhesion force for both the flat and rough models changed. Despite the increase in contact area, the adhesion force of flat Ag/CNT interface decreased after the heat treatment because of plastic deformation of the Ag thin film. The result suggests that internal stress of the CNT induced by the substrate deformation contributes in reduction of adhesion. Contrarily, heat treatment to the rough model increases adhesion force because of the expanded contact area. The contact area is speculated to be more influential to the adhesion force rather than the internal stress of the CNT on the rough Ag thin film, because the CNT on the rough model contains internal stress regardless of the heat treatment. Therefore, as demonstrated by simulation results, the heat treatment can prevent delamination or wear of CNT coating on a rough metallic substrate by thermal wetting phenomena.

• 공학논문집
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• 제3권1호
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• pp.181-187
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• 1998

Hydroxyapatite($Ca_10(PO_4)_6(OH)_2$)는 생체친화성이 뛰어나고 인체의 뼈와 성분이 비슷하여 생체이식재료로 많이 사용되고 있다. 한편 HAp는 소결후 낮은 강도 때문에 HAp자체만으로는 생체이식재료로서의 강도를 기대할 수가 없다. 그러나 알루미나는 생리화학적인 환경에서 높은 강도와 매우 안정한 성질을 가지고 있기 때문에 알루미나 위에 HAp를 coating시켜 사용하려는 시도가 있었다. 본 연구는 알루미나와 HAp의 장점만을 이용하고, HAp에 항균성 물질을 첨가하여 항균효과를 나타내도록 하였다. 항균test는 생체재료이식시 가장 많은 감염을 일으키는 bacteria를 사용하여 실시하였다. 먼저 HAp에서 $Ag^+$와 $Ca^{2+}$이 이온교환을 시키기 위하여 20ppm, 100ppm의 $AgNO_3$용액에 48시간동안 처리하고, 이 재료를 사용하여 항균test를 하였다. 항균test에 사용된 bacteria는 gram negative bacteria인 Escherichia coli와 Pseudomonas aeruginosa, gram positive bacteria인 Staphylococcus epidermidis를 사용하였고, 항균test결과는 매우 좋은 것으로 나타났다. $AgNO_3$용액에서 처리한 sample들은 SEM과 XRD를 사용하여 표면구조와 성분을 조사하고, 유사생체용액(Simulated Body Fluid)에서 Ag release curve를 조사하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.125-125
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• 2011

In this study, we investigated the electrical, optical, structural, and surface properties of indium zinc oxide (IZO)/Ag/IZO multilayer electrode grown by specially designed roll-to-roll sputtering system using the flexible substrate. By the continuous roll-to-roll sputtering of the bottom IZO, Ag, and top IZO layers at room temperature, they were able to fabricate a high quality IZO/Ag/IZO multilayer electrode. At optimized conditions, the bottom IZO layer (40 nm) was deposited on a flexible substrate. After deposition of the Bottom IZO layer, Ag layer was deposited onto the bottom IZO film as a function of DC power (200~500 W). Subsequently, the top IZO layer was deposited onto the Ag layer at identical deposition conditions to the bottom IZO layer (40 nm). We investigated the characteristics of IZO/Ag/IZO multilayer electrode as a function of Ag thickness. It was found that the electrical and optical properties of IZO/Ag/IZO multilayer electrode was mainly affected thickness of the Ag layer at optimized condition. In case of IZO/Ag/IZO multilayer electrode with the Ag power (350W), it exhibited a low sheet resistance of 7.1 ohm/square and a high transparency of 86.4%. Furthermore, we fabricated the touch screen panel using the IZO/Ag/IZO multilayer electrode, which demonstrate the possibility of the IZO/Ag/IZO multilayer electrode grown by roll-to-roll sputtering system as a transparent conducting layer in the touch screen panel.

• 한국표면공학회지
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• 제35권2호
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• pp.107-112
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• 2002

We have studied diffusion behavior of NiFe/Ag bilayer deposited by on silicon Ion Beam Sputtering methods. The diffusion behavior of NiFe and Ag in NiFe/Ag thin film is analyzed by Medium Energy Ion Scattering Spectroscopy. For samples without Ta underlayer, silicides such as Ni-Si or Fe-Si were formed at Si substrate and NiFe interface. In contrast, Ag predominantly diffused into the NiFe layer probably through their grain boundaries for Ta underlayered samples.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• 한국결정성장학회지
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• 제11권6호
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• pp.274-284
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• 2001

A stoichimetric mixture of evaporating materials for $AgInS_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $AgInS_2$mixed crystal was deposited on thorughly etched semi-insulating GaAs(100) substrate by the Hot wall Epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $AgInS_2$ single crystal the films measured from Hall effect by van der Pauw method are $9.35\times 10^{16}/\terxtm{cm}^3$ and $294\terxtm{cm}^2$/V.s at 293 K, respectively. From the optical absorption measurement the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin film was found to be $E_g$(T)= 2.1365eV-($9.89\times 10^{-3}eV/T^2$/(2930+T). After the as-grown $AgInS_2$ single crystal thin films was annealed in $Ag^-S^-$ and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal the films has been investigated by using the photoluminescence(PL) at 10K. The native defects of $V_{Ag},V_s, Ag_{int}$ and $S_{int}$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $AgInS_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in $AgInS_2$ /GaAs did not form the native defects because In is $AgInS_2$ single crystal thin films did exist in the form of stable bonds.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.434-439
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• 2008

Silver pastes as the outer electrodes have been prepared using Pb-free glass frits with different content of $Bi_2O_3$ and the effects of glass composition on the degradation behaviors of the Ag electrodes were investigated using the change of adhesion between Ag electrode and alumina substrate with thermal cycle stress. Low adhesion and high surface resistance were observed in Ag electrode using glass frit with a $Bi_2O_3$ content of 60 wt%, owing to the open microstructure formed at the firing temperature of $600^{\circ}C$. When the $Bi_2O_3$ was increased to 80 wt% in the glass frit, the Ag electrodes had a dense microstructure with high adhesion and a low surface resistance. Delamination of the Ag electrodes was a major failure mode under thermal cycle stress and this was attributed to residual stress due to the thermal expansion mismatch between the Ag electrode and the alumina substrate.

• 한국진공학회지
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• 제17권5호
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• pp.387-393
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• 2008

제일원리계산 방법을 이용하여 Ag/Si(111)$\sqrt{3}{\times}\sqrt{3}$(이후로 $\sqrt{3}-Ag$로 표시) 표면에 은 원자가 추가로 흡착된 표면의 원자구조와 에너지를 조사하였다. 은의 덮임율을 0.02 ML에서 0.14 ML로 변화시켜가며 구조변화를 살펴보았다. 흡착된 은 원자들은 대부분 $\sqrt{3}-Ag$ 표면의 은 원자층의 작은 삼각형(ST)의 중간에 자리 잡았다. 특이한 것은 은 원자들은 은 원자층 보다 아래로 내려간다는 것이다. 은 흡착원자(adatom)의 덮임율이 증가함에 따라 adatom들은 클러스터를 만들려는 경향을 보였다. 은 흡착원자들이 모인 클러스터의 에너지를 계산해 보면 흡착원자가 세 개일 때 가장 안정됨을 알 수 있었다. 이 삼원자 클러스터를 구성 단위로 하여 $\sqrt{21}{\times}\sqrt{21}$ 구조의 원자구조를 결정할 수 있었다. 각 덮임율에서 가장 에너지가 낮은 구조들에 대한 STM 영상을 시뮬레이션 해 보면 은 원자는 찬 상태에서 어둡게 보였다. 이는 은 원자가 기판으로 전하를 제공해 줌을 의미한다. 그리고 원자층의 구조변화가 STM 실험에서 보이는 미세한 특성까지도 잘 설명하였다.

• Current Photovoltaic Research
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• 제11권1호
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• pp.8-12
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• 2023

In this work, we investigated the thickness of Ag precursor layer to improve the performance of flexible CIGSe solar cells grown on stainless steel (STS) substrates through three-stage co-evaporation with Ga grading followed by alkali treatments. The small amount of incorporated Ag in CIGSe films showed enhancement in the grain size and device efficiency. With an optimal 6 nm-thick Ag layer, the best cell on the STS substrate yielded more than 16%, which is comparable to the soda-lime glass (SLG) substrate. Thus, the addition of controlled Ag combined with alkali post-deposition treatment (PDT) led to increased open-circuit voltage (VOC), accompanied by the increased built-in potential as confirmed by capacitance-voltage (C-V) measurements. It is related to a reduction of charge recombination at the depletion region. The results suggest that Ag alloying and alkali PDT are essential for producing highly efficient flexible CIGSe solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.98-99
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• 2008

To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) 1.9501 eV - ($8.79\times10^{-4}$ eV/K)$T^2$/(T + 250 K). After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag}$, $V_{Se}$, $Ag_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.