• 제목/요약/키워드: Ag contacts

검색결과 43건 처리시간 0.021초

Clostridium difficile Toxin A Inhibits Erythropoietin Receptor-Mediated Colonocyte Focal Adhesion Through Inactivation of Janus Kinase-2

  • Nam, Seung Taek;Seok, Heon;Kim, Dae Hong;Nam, Hyo Jung;Kang, Jin Ku;Eom, Jang Hyun;Lee, Min Bum;Kim, Sung Kuk;Park, Mi Jung;Chang, Jong Soo;Ha, Eun-Mi;Shong, Ko Eun;Hwang, Jae Sam;Kim, Ho
    • Journal of Microbiology and Biotechnology
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    • 제22권12호
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    • pp.1629-1635
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    • 2012
  • Previously, we demonstrated that the erythropoietin receptor (EpoR) is present on fibroblasts, where it regulates focal contact. Here, we assessed whether this action of EpoR is involved in the reduced cell adhesion observed in colonocytes exposed to Clostridium difficile toxin A. EpoR was present and functionally active in cells of the human colonic epithelial cell line HT29 and epithelial cells of human colon tissues. Toxin A significantly decreased activating phosphorylations of EpoR and its downstream signaling molecules JAK-2 (Janus kinase 2) and STAT5 (signal transducer and activator of transcription 5). In vitro kinase assays confirmed that toxin A inhibited JAK 2 kinase activity. Pharmacological inhibition of JAK2 (with AG490) abrogated activating phosphorylations of EpoR and also decreased focal contacts in association with inactivation of paxillin, an essential focal adhesion molecule. In addition, AG490 treatment significantly decreased expression of occludin (a tight junction molecule) and tight junction levels. Taken together, these data suggest that inhibition of JAK2 by toxin A in colonocytes causes inactivation of EpoR, thereby enhancing the inhibition of focal contact formation and loss of tight junctions known to be associated with the enzymatic activity of toxin A.

용액법으로 제작된 ZnSnO 박막트랜지스터의 전극 물질에 따른 계면 접촉특성 연구 (Metal-Semiconductor Contact Behavior of Solution-Processed ZnSnO Thin Film Transistors)

  • 정영민;송근규;우규희;전태환;정양호;문주호
    • 한국재료학회지
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    • 제20권8호
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    • pp.401-407
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    • 2010
  • We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.

장군광산산(將軍鑛山産) 망간광물의 성인(成因)에 관(關)한 연구(硏究) (Origin of Manganese Carbonates in the Janggun Mine, South Korea)

  • 김규한
    • 자원환경지질
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    • 제19권2호
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    • pp.109-122
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    • 1986
  • 장군(將軍) 연(鉛) 아연(亞鉛) 망간 광상(鑛床)은 캠브로-오도뷔스기(紀)의 장군석회암(將軍石灰岩)과 춘양화강암(春陽花岡岩)과의 접촉부에 발달(發達)하는 접촉교대광상(接觸交代鑛床)이다. 광체(鑛體)는 맥상(脈狀) 및 광통형광체로 상부에는 산화(酸化)망간 및 탄산(炭酸)망간석을 주로 하는 망간광물이 우세하고 하부에는 섬아연석(閃亞鉛石)-방연석(方鉛石)-황철석(黃鐵石)-유비철석(탄산망간석)등의 황화광물(黃化鑛物)이 우세하게 발달하고 있다. 그중 망간광상의 성인에 대하여 열수교대(熱水交代)와 동시퇴적기원(同時堆積起源)으로 그 해석을 달리하고 있으며 탄산(炭酸)망간석(rhodochrosite)이 동시 퇴적기원이란 근거에서 장미암(rhodochrostone)으로 명명된 퇴적암(堆積岩)이 제안되었다(김, 1975). 본 연구에서는 탄산망간석의 기원을 규명하고 이들 광물(鑛物)의 침전환경을 추정하기 위하여 모암인 탄산염암류와 탄산망간석, 산화망간, 방해석 등의 탄소안정동위원소(炭素安定同位元素)(${\delta}^{13}C$)와 산소(酸素)동위원소(${\delta}^{18}O$)를 분석하고 이에 수반되는 황화광물(黃化廣)의 황동위원소(黃同位元素)(${\delta}^{34}S$)를 분석검토하였다. 모암인 석회암 및 돌로마이트질석회암은 ${\delta}^{13}C$=-2.6~+0.1‰ (평균 -1.5‰), ${\delta}^{18}O$=+10.9~+21.9‰ (평균 +17.5‰)이고 탄산망간석은 ${\delta}^{13}C$=-4.2~-6.3‰(평균 -5.3‰), ${\delta}^{18}O$=+7.6~+12.9‰(평균 +10.7‰)로 이들 사이에는 현저한 동위원소값의 차이를 나타내고 있다. 이는 광화용액(鑛化溶液)의 탄소(炭素) 및 산소(酸素)가 모암(母岩)인 탄산염암(炭山鹽岩)의 것과는 동일기원(同一起源)이 아님을 가르킨다. 황동위원소(黃同位元素)(${\delta}^{34}S$)의 값도 +2.0~+5‰로 좁은 범위를 나타내며 화성기원(火成起源)의 황(黃)으로 해석된다. 황동위원소지질온도계(黃同位元素地質溫度計)에 의해 추정된 광상생성온도(鑛床生成溫度)는 $288{\sim}343^{\circ}C$이다. 탄산(炭酸)망간석을 침전시킨 광화용액(鑛化溶液)의 ${\delta}^{18}O_{H_2O}$=+6.6~+10.6‰, ${\delta}^{13}C_{CO_2}$=-4.0~-5.1‰로 심부기원(深部起源)(화성기원(火成起源))으로 해석된다. 따라서 탄산(炭酸)망간석은 마그마성 열수기원에서 침전된것이다. 그러나 망간산화물은 모두 지하수면(地下水面) 상부에서 탄산망간석의 산화(酸化)에 의해 2차적(二次的)으로 형성된 표성산화(表成酸化)망간이며 산화망간광물의 산소는 순환수의 산소보다 석회암(石灰岩)의 산소와 동위원소교환(同位元素交換)이 우세하게 일어난 것으로 해석된다.

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