• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.827-832
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• 2005

Dual band internal antennas were fabricated with Ag conducting paste of various preparation conditions and different print thickness by silk screen print. We have investigated microwave properties were compared Ag conducting paste antenna with copperplate antenna at 800 MHz and 1,800 MHz. Gain of Ag conducting paste antenna was improved when preparation conditions were the single size Ag particle, using dry type resin and high Ag containing percent. However, it was lower than that of copperplate antenna within $0.1\~2.0dBi$ at 800MHz. In addition, it was improved at 800MHz when thickness of Ag conducting paste was printed more than skin depth but it was held after critical print thickness. On the other hand, it was reached level of copperplate antenna at 1,800MHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.298-302
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• 2010

We investigated the resistance change behavior of SABiT (Samsung Advanced Bump interconnection Technology) technology-applied PCB (Printed Circuit Board) with the various bump sizes and fabrication conditions. Many testing samples with different bump size, prepreg thickness, number of print on the formation of Ag paste bump, were made. The resistance of Ag paste bump itself was calculated from the Ag paste resistivity and bump size, measured by using 4-point probe method and FE-SEM (Field Emission Scanning Electron Microscope), respectively. The contact resistance between Ag paste bump and conducting Cu line were obtained by subtracting the Cu line and bump resistances from the measured total resistance. It was found that the contact resistance drastically changed with the variation of Ag paste bump size and the contact resistance had the largest influence on total resistance. We found that the bump size and contact resistance obeyed the power law relationship. The resistance of a circuit in PCB can be estimated from this kind of relationship as the bump size and fabrication technique vary.

• Journal of Powder Materials
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• v.24 no.6
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• pp.464-471
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• 2017

A metal mesh TCE film is fabricated using a series of processes such as UV imprinting of a transparent trench pattern (with a width of $2-5{\mu}m$) onto a PET film, filling it with silver paste, wiping of the surface, and heat-curing the silver paste. In this work nanosized (40-50 nm) silver particles are synthesized and mixed with submicron (250-300 nm)-sized silver particles to prepare silver paste for the fabrication of metal mesh-type TCE films. The filling of these silver pastes into the patterned trench layer is examined using a specially designed filling machine and the rheological testing of the silver pastes. The wiping of the trench layer surface to remove any residual silver paste or particles is tested with various mixture solvents, and ethyl cellosolve acetate (ECA):DI water = 90:10 wt% is found to give the best result. The silver paste with 40-50 nm Ag:250-300 nm Ag in a 10:90 wt% mixture gives the highest electrical conductance. The metal mesh TCE film obtained with this silver paste in an optimized process exhibits a light transmittance of 90.4% and haze at 1.2%, which is suitable for TSP application.

• Clean Technology
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• v.19 no.4
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• pp.410-415
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• 2013

The supercapacitors were fabricated using silver (Ag) nano paste and activated carbon paste on the polyimide (PI) film and 5% potassium polyacrylate (PAAK) was used for gel electrolyte. In this paper, the current collector film and the electrode film were fabricated using screen printing. The thickness of printed silver paste was $7.3{\mu}m$ and the sheet resistance has the range of $5-7m{\Omega}/square$. An activated carbon with a surface area of $1,968m^2/g$, an electronic conducting agent (SUPER P, TIMCAL) and poly (4-vinylphenol) were mixed in 2-(2-buthoxyethoxy) ethyl acetate (BCA) with a ratio of 7:1:3 to fabricate the electrode paste. To analyze electrochemical characteristics, cyclic voltammetry was performed to evaluate the stability of the devices under the voltage range of -0.5-0.5 V. The calculated specific capacitances were 44.04 and 8.62 F/g for 10 and 500 mV/s scan rates, respectively.