• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.88-93
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• 2005

Ti-AI-Si-N coating layers were deposited on WC-Co substrates by a hybrid system of arc ion plating and sputtering techniques. The coatings were prepared with different Si contents to investigate the effect of Si content on their mechanical properties and microstructures. The dry sliding wear experiments were conducted on Ti-AI-Si-N coated WC-Co discs at constant load, 3N, and sliding speed, 0.1 m/s with two different counterpart materials such as steel ball and zirconia ball using a conventional ball-on-disc sliding wear apparatus. In the case of steel ball, the friction coefficient of Ti-AI-Si-N coating layers became lower than that of Ti-AI­N coating layers. The friction coefficient decreased with increasing of Si content due to adhesive wear behavior between coating layer and steel ball. On the contrary, in the case of zirconia ball, the friction coefficient increased with increasing of Si content, indicating that abrasive wear behavior was more dominant when the coating layers slid against zirconia ball.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Applied Chemistry for Engineering
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• v.22 no.1
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• pp.104-108
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• 2011

In the non-conductive adhesives (NCAs) for adhesion of micro electro mechanical system (MEMS), there are some problems such as delamination and cracking resulting from the large differences of coefficients of thermal expansion (CTE) between NCAs and substrates. So, the addition of inorganic particles such as silica and nano clay to the CTEs composit have been applied to reduce the CTEs of the adhesives. Additions of the flexibilizers such as siloxanes have also been performed to improve the flexibility of epoxy composite. Amino modified siloxane (AMSs) were used to improve compatibility between epoxy and siloxane. In this study, glass transition temperatures (Tg) and moduli of those composites were measured to confirm the effects of AMS with two different equivalents on thermal/mechanical properties of AMS/epoxy composites. Tg of KF-8010/epoxy composites decreased from 148 to $122^{\circ}C$ and those of X-22-161A/epoxy composites decreased from 148 to $121^{\circ}C$. Moduli of KF-8010/epoxy composites decreased from 2648 to 2143 MPa by adding KF-8010 and moduli of X-22-161A/epoxy composites decreased from 2648 to 2014 MPa. In short, using long Si-O chain AMS leads to a greater decrease in moduli. However, haven't showed significant differences in Tg's.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.55-60
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• 2021

In order to produce wearable displays with high adhesion while maintaining flexible characteristics, the adhesive method using electro plating method was carried out. Laser lift-off (LLO) transcription was also used to remove sapphire substrates from LEDs bonded to fibers. Afterwards, the SEM and EDS data of the sample, which conducted the adhesion method using electro plating, confirmed that copper actually grows through the lattice of the fiber fabric to secure the light source and fiber. The adhesion characteristics of copper were checked using Universal testing machine (UTM). After plating adhesion, the characteristics of the LLO transcription process completed and the LED without the transcription process were compared using probe station. The electroluminescence (EL) according to the enhanced current was measured to check the characteristics of the light source after the process. As the current increases, the temperature rises and the bandgap decreases, so it was confirmed that the spectrum shifted. In addition, the change in the electrical characteristics of the samples according to the radius change is confirmed using probe station. The radius strain also had mechanical strength that copper could withstand bending stress, so the Vf variation was measured below 6%. Based on these results, it is expected that it will be applied to batteries, catalysts, and solar cells that require flexibility as well as wearable displays, contributing to the development of wearable devices.

• Restorative Dentistry and Endodontics
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• v.29 no.2
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• pp.170-176
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• 2004

Objectives : In the unique metal iris method. the developing interfacial gap at the cavity floor resulting from the cavity wall property during polymerizing composite resin might affect the nominal shear bond strength values. The aim of this study is to evaluate that the iris method reduces the cohesive failure in the substrates and the cavity wall property effects on the shear bond strength tests using iris method. Materials and Methods : The occlusal dentin of 64 extracted human molars were randomly divided into 4 groups to simulate two different levels of cavity wall property (metal and dentin iris) and two different materials ($ONE-STEP^{\circledR}$ and $ALL-BOND^{\circledR}$ 2) for each wall property. After positioning the iris on the dentin surface. composite resin was packed and light-cured. After 24 hours the shear bond strength was measured at a crosshead speed of 0.5 mm/min. Fracture analysis was performed using a microscope and SEM. The data was analyzed statistically by a two-way ANOV A and t-test. Results : The shear bond strength with metal iris was significant higher than those with dentin iris (p＝0.034). Using $ONE-STEP^{\circledR}$, the shear bond strength with metal iris was significant higher than those with dentin iris (p＝0.005), but not in $ALL-BOND^{\circledR}$ 2 (p＝0.774). The incidence of cohesive failure was very lower than other shear bond strength tests that did not use iris method. Conclusions：The iris method may significantly reduce the cohesive failures in the substrates. According to the bonding agent systems. the shear bond strength was affected by the cavity wall property.