• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.269-275
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• 2005

A flux lock-type SFCL consists of two coils which are wound in parallel each other through an iron core, and a HTSC thin film connects in series with coil 2. The operation of the flux-lock type SFCL can be divided into the subtractive polarity winding and the additive polarity winding operations according to the winding directions between coil 1, coil 2. When a fault occurs, the fault current in the HTS thin film exceeds the critical current so that resistance is generated in the HTS film, and thereby the fault current is limited by an instant rise in the impedance of the flux-lock type SFCL. We investigated he variances of initial fault current limiting instant according to the ratio of inductance of coil 1 and coil 2 in the flux-lock type SFCL. It was confirmed from experiments that the initial fault current limiting instant in the subtractive polarity and additive polarity windings were faster as the ratio of coil 2' inductance for coil 1's inductance increased. The 1st peak of fault current in case of the subtractive polarity winding was higher as the ratio of coil 2's inductance for coil 1's inductance increased. On the other hand, in case of the additive polarity winding, the 1st peak of fault current was lower.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.341-344
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• 2004

The superconducting properties of $YBa_2Cu_3O_x$ with different content impurities of PbO and $BaPbO_3$ were studied. When the PbO was used as an additive in $YBa_2Cu_3O_x$, although the melting point could be reduced, the superconductivity became poor. From the XRD pattern of the sintered mixture of $YBa_2Cu_3O_x$ and PbO it was known that there is a reaction between $YBa_2Cu_3O_x$ and PbO, and the product is $BaPbO_3$. In the process of the reaction the superconducting phase of $YBa_2Cu_3O_x$ was decreased and $BaPbO_3$ would be the main phase in the sample. Therefore, $BaPbO_3$ was chosen as the impurity additive for the comparative study. The single phase of $BaPbO_3$ was synthesized by the simple way from both mixtures of $BaCO_3$ and PbO, $BaCO_3$ and $PbO_2$. Different contents of $BaPbO_3$ (10%, 20%, 30%) were added in the $YBa_2Cu_3O_x$. By the Phase analysis in the XRD patterns it was proved that there was no reaction between $YBa_2Cu_3O_x$ and $BaPbO_3$. When $BaPbO_3$ was used as impurity in $YBa_2Cu_3O_x$ the superconductivity was much better than PbO as an impurity additive in $YBa_2Cu_3O_x$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.3-6
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• 2002

Effect of Ag additive element on microstructure of $Fe_{87-x}Zr_7B_6Ag_x$, magnetic thin films on Si(001) substrates has been investigated using Transmission Electron Microscopy(TEM) and X-ray Diffraction(XRD). All samples with additive Ag element were made by DC-sputtering and subjected to annealing treatments of $300^{\circ}C{\siim}600^{\circ}C$ for 1 hr. TEM and XRD showed that perfectly amorphous state in Ag-free Fe-based films was observed in as-deposited condition. The as-deposited Fe-based films with the presence of Ag constituent have a mixture of Fe-based amorphous and nano-sized Ag crystalline phases. In this case, additive element, Ag was soluted into Fe-based matrix. With the increase in additive element, Ag, insoluble nano-crystalline Ag particles were dispersed in the Fe-based amorphous matrix. Crystallization of Fe-based amorphous phase in the matrix of $Fe_{82}Zr_7B_6Ag_5$ thin films occurred at an annealing temperature of $400^{\circ}C$. Upon annealing, the amorphous-Ag crystalline state of Fe-Zr-B-Ag films was transformed into the mixture of Ag crystalline phase + Fe-based amorphous phase + ${\alpha}$-Fe cluster followed by the crystallization process of ${\alpha}$-Fe nanocrystalline + Ag crystalline phases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.402-410
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• 2000

The electrical properties and stability of Pr$_{6}$/O$_{11}$-based ZnO wvaristors consisting of ZnO-Pr$_{6}$/O$_{11}$-CoO-Dy$_{2}$/O$_{3}$ based ceramics were investigated in the Dy$_{2}$/O$_{3}$ additive content range o 0.0 to 2.0 mol%. The density was nearly constant 5.62 g/cm$^3$corresponding to 97% of theoretical density as Dy$_{2}$/O$_{3}$ additive content increases up to 0.5 mol%. However the density decreased as Dy$_{2}$/O sub 3/ additive content is further additive content. Pr$_{6}$/O$_{11}$-based ZnO varistors doped with 0.5mol% Dy$_{2}$/O$_{3}$ exhibited a good nonlinearity, which is 37.76 in the nonlinear exponent and 5.36 $mutextrm{A}$ in the leakage current. And they exhibited very stress (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$/115$^{\circ}C$/12h)+(0.95 V$_{1mA}$/1$25^{\circ}C$/12h). Consequently it was estimated that ZnO-0.5 mol% Pr$_{6}$/O$_{11}$-1.0 mol% CoO-0.5 mol% Dy$_{2}$/O$_{3}$ based ceramics will be sufficiently used as a basic composition to develop the advanced Pr$_{6}$/O$_{11}$-based ZnO varistors in the future.he future.uture.he future.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.13 no.11
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• pp.1097-1105
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• 2001

The purpose of this study is to investigate the propriety of TMA clathrate as a cold storage medium. Particularly, this is to examine the extent of subcooling improvement when the additives are added to the TMA clathrate, because water used cold storage material has low phase change temperature and subcooling. This study has been analysed and compared with TMA 30 wt% clathrate how phase change temperature, subcooling and specific heat in the various concentrations are changed. This results view to be improved phase change temperature and subcooling of TMA 30 wt% as a cold storage medium, when it had some additive. Additional1y, it is found that the additive must be controlled under available solution limit and study for new additive must be lasted to know its effect.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.27-28
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• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.545-545
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• 2008

Poly-Si is an essential material for floating gate in NAND Flash memory. To fabricate this material within region of floating gate, chemical mechanical polishing (CMP) is commonly used process for manufacturing NAND flash memory. We use colloidal silica abrasive with alkaline agent, polymeric additive and organic surfactant to obtain high Poly-Si to SiO2 film selectivity and reduce surface defect in Poly-Si CMP. We already studied about the effects of alkaline agent and polymeric additive. But the effect of organic surfactant in Poly-Si CMP is not clearly defined. So we will examine the function of organic surfactant in Poly-Si CMP with concentration separation test. We expect that surface roughness will be improved with the addition of organic surfactant as the case of wafering CMP. Poly-Si wafer are deposited by low pressure chemical vapor deposition (LPCVD) and oxide film are prepared by the method of plasma-enhanced tetra ethyl ortho silicate (PETEOS). The polishing test will be performed by a Strasbaugh 6EC polisher with an IC1000/Suba IV stacked pad and the pad will be conditioned by ex situ diamond disk. And the thickness difference of wafer between before and after polishing test will be measured by Ellipsometer and Nanospec. The roughness of Poly-Si film will be analyzed by atomic force microscope.

• Journal of Photoscience
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• v.7 no.2
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• pp.45-46
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• 2000

The polyoxyethylene compounds were added into the photographic emulsion during the physical ripening of photo sensitive silver halide crystal in this emulsion. The polyoxyethylene compounds improved the photographic properties of the film to a great extent increasing the photo sensitivity and decreasing the fog density.

• Bulletin of the Korean Chemical Society
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• v.26 no.3
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• pp.496-498
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• 2005

• Journal of the Korean Electrochemical Society
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• v.21 no.3
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• pp.55-60
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• 2018

The demand for LIBs with higher energy densities has increased continuously because the emergence of wider and more challenging applications including HEV and EV has became imperative. However, in the case of anode material, graphite is insufficient to meet this need. To meet such demand, several type of negative electrode materials like silicon, tin, SiO, and transition metal oxide have been investigated for the advanced lithium secondary batteries. Recently, lithium vanadium oxide, which has a layered structure, is assumed as one of the promising anode material as alternative of graphite. This material shows a high volumetric capacity, which is 1.5 times higher than that of graphite. However, relative low electrical conductivity and particle fracture, which results in the electrolyte decomposition and loss of electric contact between electrode, induce rapid capacity decay. In this report, we investigated the effect of electrolyte additive on the electrochemical characteristics of lithium vanadium oxide.