• Journal of the Korean Ceramic Society
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• v.35 no.3
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• pp.219-230
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• 1998

Various interlayer materials have been tested for active metal(Cusil ABA) brazing of Si3N4/S. S316 joint. In general multilayer joint had higher strength(80-150 MPa) and better reliability than monolayered one. The joint with Cu(0.2)/Mo(0.3)/Cu(0.2mm) interlayer showed the highest bending strength of abou 490 MPa and the joint with Cu(0.2)/Mo(0.3mm) interlayer the best reliability (14.6 Weibull modulus). The stresses distributed in joint materials during 4-point bending test were estimated by CAE von Mises analysis; the estimated stresses were In good agreement with the measured data. In multilayer joint Cu was though to reduce the residual stresses induced by the difference in thermal expansion coefficient between the ceramic Mo and metal It apperared that a Cu/Mo was optimum interlayer material for Si3N4/S. S316 joint with high bending strength (420 MPa) and reliability. In addition the various shapes and types of compound were examined by EPMA in joining interface.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.15-22
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• 2019

In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and $Ga_2O_3$ have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.970-977
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• 1999

Effect of Mo interlayer on the relaxation of residual stress in AlN/Cu pint bonded by active-metal brazing method was investigated. The stress analyses by finite-element-method, the measurement of pint strength and the observation of fracture surface were carried out and their results were compared with each other. From the results of stress analysis it is confirmed that a Mo interlayer led to a shift of maximum stress concentration site from AlN/insert-metal interface$\rightarro$ insert-metal/Mo$\rightarro$Mo interlayer. Additionally, with increase of the Mo interlayer thickness the stress concentration with tensile component was separately built both at the interface of Cu/Mo and AlN/Mo. whereby the residual stress in the free surface of AlN close to the bonded interface was drastically reduced. The AlN/Mo/Cu pints with Mo interlayer thickness of above 400$\mu\textrm{m}$ showed the strengths higher than 200 MPa. upto max. 275 MPa, while the AlN/Cu pint only max. 52 MPa.