• 제목/요약/키워드: Active Brazing

검색결과 33건 처리시간 0.017초

Si$_3$N$_4$/S. S316 접합에서 중간재가 접합강도 및 신회도에 미치는 영향 (Effect of Interlayer Materials on Bending Strength and Reliability of Si$_3$N$_4$/S. S316 Joint)

  • 윤호욱;박상환;최성민;임연수;정윤중
    • 한국세라믹학회지
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    • 제35권3호
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    • pp.219-230
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    • 1998
  • Various interlayer materials have been tested for active metal(Cusil ABA) brazing of Si3N4/S. S316 joint. In general multilayer joint had higher strength(80-150 MPa) and better reliability than monolayered one. The joint with Cu(0.2)/Mo(0.3)/Cu(0.2mm) interlayer showed the highest bending strength of abou 490 MPa and the joint with Cu(0.2)/Mo(0.3mm) interlayer the best reliability (14.6 Weibull modulus). The stresses distributed in joint materials during 4-point bending test were estimated by CAE von Mises analysis; the estimated stresses were In good agreement with the measured data. In multilayer joint Cu was though to reduce the residual stresses induced by the difference in thermal expansion coefficient between the ceramic Mo and metal It apperared that a Cu/Mo was optimum interlayer material for Si3N4/S. S316 joint with high bending strength (420 MPa) and reliability. In addition the various shapes and types of compound were examined by EPMA in joining interface.

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차세대 전력반도체 소자 및 패키지 접합 기술 (Recent Overview on Power Semiconductor Devices and Package Module Technology)

  • 김경호;좌성훈
    • 마이크로전자및패키징학회지
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    • 제26권3호
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    • pp.15-22
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    • 2019
  • In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and $Ga_2O_3$ have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.

AlN 세라믹스와 금속간 계면접합에 관한 연구: II. AlN/Cu 접합체의 잔류응력에 미치는 Mo 중간재의 영향 (A Study on the Interfacial Bonding between AlN Ceramics and Metals: II. Effect of Mo Interlayer on the Residual Stress of AlN/Cu Joint)

  • 박성계;김지순;유희;염영진;권영순
    • 한국재료학회지
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    • 제9권10호
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    • pp.970-977
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    • 1999
  • 활성금속브레이징법으로 계면접합된 AlN/Cu 접합체의 잔류응력 완화에 미치는 Mo 중간재의 영향을 조사하였다. 유한요소법에 의한 응력 해석과 접합체 강도 측정, 파단면의 관찰을 행하였으며, 이들 결과를 비교, 분석하였다. 응력 해석 결과로부터, Mo 중간재를 사용할 경우 최대 잔류 주응력이 형성되는 위치가 AlN/삽입금속 계면으로부터 삽임금속/Mo 계면을 통하여 Mo 내부로 이동됨을 확인하였다.접합체의 자유표면에 형성되는 인장성분의 응력집중 위치는 Mo 중간재 두께가 증가됨에 따라 Cu/Mo 계면과 Mo/AlN 계면의 두 곳으로 분리되었으며, AlN측 잔류응력의 크기는 크게 감소하였다. 중간재를 사용하지 않은 경우 최대 접합강도가 52 MPa로 낮은 강도를 보였으나, 두께 400$\mu\textrm{m}$ 이상의 Mo 중간재를 사용한 접합체의 경우, 200 MPa 이상, 최대 275 MPa의 접합강도를 얻을 수 있었다.

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