• 대한용접접합학회:학술대회논문집
• /
• 대한용접접합학회 2001년도 춘계학술발표대회 개요집
• /
• pp.271-272
• /
• 2001

• Nuclear Engineering and Technology
• /
• 제47권5호
• /
• pp.608-616
• /
• 2015

The migration of silver (Ag) in silicon carbide (SiC) and $^{110m}Ag$ through SiC of irradiated tristructural isotropic (TRISO) fuel has been studied for the past three to four decades. However, there is no satisfactory explanation for the transport mechanism of Ag in SiC. In this work, the diffusion coefficients of Ag measured and/or estimated in previous studies were reviewed, and then pre-exponential factors and activation energies from the previous experiments were evaluated using Arrhenius equation. The activation energy is $247.4kJ{\cdot}mol^{-1}$ from Ag paste experiments between two SiC layers produced using fluidized-bed chemical vapor deposition (FBCVD), $125.3kJ{\cdot}mol^{-1}$ from integral release experiments (annealing of irradiated TRISO fuel), $121.8kJ{\cdot}mol^{-1}$ from fractional Ag release during irradiation of TRISO fuel in high flux reactor (HFR), and $274.8kJ{\cdot}mol^{-1}$ from Ag ion implantation experiments, respectively. The activation energy from ion implantation experiments is greater than that from Ag paste, fractional release and integral release, and the activation energy from Ag paste experiments is approximately two times greater than that from integral release experiments and fractional Ag release during the irradiation of TRISO fuel in HFR. The pre-exponential factors are also very different depending on the experimental methods and estimation. From a comparison of the pre-exponential factors and activation energies, it can be analogized that the diffusion mechanism of Ag using ion implantation experiment is different from other experiments, such as a Ag paste experiment, integral release experiments, and heating experiments after irradiating TRISO fuel in HFR. However, the results of this work do not support the long held assumption that Ag release from FBCVD-SiC, used for the coating layer in TRISO fuel, is dominated by grain boundary diffusion. In order to understand in detail the transport mechanism of Ag through the coating layer, FBCVD-SiC in TRISO fuel, a microstructural change caused by neutron irradiation during operation has to be fully considered.

• 한국결정성장학회지
• /
• 제5권3호
• /
• pp.209-214
• /
• 1995

99.9%의 $Fe_2O_3$ 를 0.2 wt% 첨가한 $SrTiO_3$ 단결정을 air 분위기와 질소분위기하에서 floating zone 법으로 성장시켰다. 성장속도는 5mm/hr 였으며 회전속도는 30rpm이었다. 육성한 결정을 성장방향에 수직하게 절단하여 준비한 시편을 질소분위기하에서 900, 1000, $1100^{\circ}C$에서 2시간동안 annealing한 후 비저항을 측정하였다. 측정한 비저항치를 전기전도도로 전환하고 이를 이용해 계산한 activation energy로서 전기전도도 향상기구를 설명하고자 하였다.

• Journal of Korean Vacuum Science & Technology
• /
• 제5권1호
• /
• pp.11-18
• /
• 2001

Dielectric passivation effects on the EM(electromigration) have been a great interest with recent ULSI and multilevel structure tends in thin film interconnections of a microelectronic device. SiO$_2$, PSG(phosphosilicate glass), and Si$_3$N$_4$ passivation materials effects on the EM resistance were investigated by utilizing widely used Al-1%Si thin film interconnections. A standard photolithography process was applied for the fabrication of 0.7㎛ thick 3㎛ wide, and 200㎛ ~1600㎛ long Al-1%Si EM test patterns. SiO$_2$, PSG, and Si$_3$N$_4$ dielectric passivation with the thickness of 300 nm were singly deposited onto the Al-1%Si thin film interconnections by using an APCVD(atmospheric pressure chemical vapor deposition) and a PECVD(plasma enhanced chemical vapor deposition) in order to investigate the passivation materials effects on the EM characteristics. EM tests were performed at the direct current densities of 3.2 $\times$ 10$\^$6/∼4.5 $\times$ 10$\^$6/ A/cm$^2$ and at the temperatures of 180 $\^{C}$, 210$\^{C}$, 240$\^{C}$, and 270$\^{C}$ for measuring the activation energies(Q) and for accelerated test conditions. Activation energies were calculated from the measured MTF(mean-time-to-failure) values. The calculated activation energies for the electromigration were 0.44 eV, 0.45 eV, and 0.50 eV, and 0.66 eV for the case of nonpassivated-, Si$_3$N$_4$passivated-, PSG passivated-, and SiO$_2$ passivated Al-1%Si thin film interconnections, respectively. Thus SiO$_2$ passivation showed the best characteristics on the EM resistance followed by the order of PSG, Si$_3$N$_4$ and nonpassivation. It is believed that the passivation sequences as well as the passivation materials also influence on the EM characteristics in multilevel passivation structures.

• Composites Research
• /
• 제15권6호
• /
• pp.8-15
• /
• 2002

본 실험에서는 2관능성 에폭시 수지(2EP)와 생분해성 poly(butylene succinate)(PBS) 블렌드의 유변학적 특성, 경화거동, 열안정성 그리고 기계적 특성을 살펴보았다. 유변학적 특성은 레오미터를 이용하여 등온 조건 하에서 검토하였고, 겔화시간과 경화 온도를 이용한 Arrhenius 방정식을 적용하여 가교 활성화 에너지($\textrm{E}_c$)를 구하였다. $\textrm{E}_c$는 2EP에 대한 PBS의 비율이 10 wt%로 증가함에 따라 증가하였다. DSC 측정 결과, 경화 활성화 에너지($\textrm{E}_a$)는 $\textrm{E}_c$와 유사만 경향을 나타내었는데 이는 2EP와 PBS 사이의 분자상호작용이 증가하였기 때문으로 사료된다. 그리고 열안정성과 관련하이 분해 활성화에너지($\textrm{E}_t$)는 Horowitz-Metzger식을 이용한 적분법을 사용하여 구하였는데 PBS 10 wt%에서 증가하였다. 그리고 20 wt% PBS일 때 가장 높은 임계응력세기 인자를 보이는데, 이는 2EP/PBS 블렌드 시스템의 파괴인성이 증가하였기 때문으로 사료된다.

• 폴리머
• /
• 제26권6호
• /
• pp.767-777
• /
• 2002

본 실험에서는 4관능성 에폭시 수지 (4EP)와 생분해성 modified aliphatic polyester (MAP) 블렌드의 경화 거동, 열안전성, 유변학적 특성, 그리고 기계적 특성을 살펴보았다. DSC 측정 결과, 경화 활성화 에너지 ( $E_{a}$ )는 4EP에 대한 MAP의 비율이 10 wt%로 증가함에 따라 증가하였다. 이는 4EP와 MAP 사이의 분자상호작용이 증가하였기 때문으로 사료된다. 열안정성과 관련있는 분해 활성화 에너지 ( $E_{t}$ )는 Coats-Redfern 방법을 이용하여 구하였으며 MAP의 함량비가 10에서 30 wt% 내에서 증가하였다. 이는 블렌드 시스템에서의 가교 밀도의 증가 때문으로 사료된다. 유변학적 특성은 레오미터를 이용하여 등온 조건하에서 검토하였고, 겔화 시간과 경화 온도를 이용한 Arrhenius 방정식을 적용하여 가교 활성화 에너지 ( $E_{c}$ )를 검토한 결과, $E_{a}$ 와 유사한 경향을 나타내었다. 기계적 계면특성인 파괴인성 ( $K_{IC}$ )은 시편의 semi-IPN구조 거동으로 고찰하였다.

• Transactions on Electrical and Electronic Materials
• /
• 제12권4호
• /
• pp.164-168
• /
• 2011

Nanocrystalline cadmium sulphide (CdS) thin films were prepared using chemical bath deposition (CBD), and the structural, optical and photoconductive properties were investigated. The crystal structure of CdS thin film was studied by X-ray diffraction. The crystallite size, dislocation density and lattice constant of CBD CdS thin films were investigated. The dislocation density of CdS thin films initially decreases with increasing film thickness, and it is nearly constant over the thickness of 2,500 ${\AA}$. The dislocation density decreases with increasing the crystallite size. The Urbach energies of CdS thin films are obtained by fitting the optical absorption coefficient. The optical band gap of CdS thin films increases and finally saturates with increasing the lattice constant. The Urbach energy and optical band gap of the 2,900 A-thick CdS thin film prepared for 60 minutes are 0.24 eV and 2.83 eV, respectively. The activation energies of the 2,900 ${\AA}$-thick CdS thin film at low and high temperature regions were 14 meV and 31 meV, respectively. It is considered that these activation energies correspond to donor levels associated with shallow traps or surface states of CdS thin film. Also, the value of ${\gamma}$ was obtained from the light transfer characteristic of CdS thin film. The value of ${\gamma}$ for the 2,900 A-thick CdS thin film was 1 at 10 V, and it saturates with increasing the applied voltage.

• Composites Research
• /
• 제33권5호
• /
• pp.268-274
• /
• 2020

이 연구에서는 에폭시 수지에 나노 실리카 입자의 농도가 열화 거동에 미치는 영향에 대해 알아보았다. 약 12 nm 크기의 실리카 입자를 에폭시 수지에 세가지 무게비로 섞은 나노 복합소재를 제작하여 열중량분석(Thermogravimetric Analysis, TGA)을 이용하여 여섯 가지의 서로 다른 승온률 하에서 열화거동 변화를 분석하였다. 등변환법(Isoconversional Method)에 기초한 Friedman, Flynn-Wall-Ozawa, Kissinger 그리고 DAEM(Distributed Activation Energy Method) 방식으로 활성화에너지를 정량적으로 계산하였다. 계산 결과에 의하면 순수 에폭시와 비교했을 때, 실리카 입자가 함유될 경우 활성화에너지가 상승한다는 것을 확인할 수 있었다. 그러나 10%와 18%의 활성화에너지 값이 유사함에 따라 반드시 함유랑에 비례하지는 않는 것으로 나타났다. 또한 각 방법에 의한 계산방식을 분석하여 그 결과를 비교하였다.

• 한국자동차공학회논문집
• /
• 제14권5호
• /
• pp.73-78
• /
• 2006

In this paper, creep tests of Mg-Zn-Mn and Mg-Zn-Mn-Ca alloys, which were casted by mold with Mg-3%Zn-1%Mn and Mg-3%Zn-1%Mn-0.2%Ca, were done under the temperature range of 473-573K and the stress range of 23.42-78.00Mpa. The activation energies and the stress exponents were measured to investigate the creep plastic deformation of those alloys, and the rupture lifes of Mg-Zn-Mn alloy were also measured to investigate the fracture behavior. From the results, the activation energy of Mg-Zn-Mn and Mg-Zn-Mn-Ca alloys under the temperature range of 473-493K were measured as 149.87, 145.98KJ/mol, respectively, and the stress exponent were measured as 5.13, 6.06 respectively. Also the activation energies Mg-Zn-Mn and Mg-Zn-Mn-Ca alloys under the temperature range of 553-573K were obtained as 134.41, 129.22KJ/mol, respectively, and tress exponent were obtained as 3.48, 4.63, respectively. Finally stress dependence of rupture life and the activation energy of rupture life of Mg-Zn-Mn under the temperature range of 473-493K was measured as 8.05, 170.0(KJ/mol), respectively, which were a little higher than the results of steady state creep.

• 한국식품영양학회지
• /
• 제16권4호
• /
• pp.321-327
• /
• 2003

The reaction rates of 4-ethyl pyridine with p-methyl benzylbromide have been measured by conductometry in acetonitrile, and the rate constants of these reactions are determined in accordance with various temperatures (20, 25, 30$^{\circ}C$) and pressures (1, 200, 500, 1000 bar). The rate constants increased with the higher pressure and temperature. The activation energies and activation parameter values of these reactions are calculated by determination of the rate constants the same. The activation volume, activation compressibility coefficient and the activation entropy are all negative. The result of kinetic studies for the pressure show that this reaction proceeds in typical bimolecular nucleophilic substitution reaction.