• Current Photovoltaic Research
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• v.11 no.3
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• pp.67-74
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• 2023

The earth-abundant element-based Cu₂ZnSn(S,Se)₄ (CZTSSe) thin film solar cells (TFSCs) have attracted greater attention in the photovoltaic (PV) community due to their rapid development in device power conversion efficiency (PCE) >13%. In the present work, we demonstrated the fine-tuning of the bandgap in the CZTSSe TFSCs by altering the sulfur (S) to the selenium (Se) chalcogenide ratio. To achieve this, the CZTSSe absorber layers are fabricated with different S/(S+Se) ratios from 0.02 to 0.08 of their weight percentage. Further compositional, morphological, and optoelectronic properties are studied using various characterization techniques. It is observed that the change in the S/(S+Se) ratios has minimal impact on the overall Cu/(Zn+Sn) composition ratio. In contrast, the S and Se content within the CZTSSe absorber layer gets altered with a change in the S/(S+Se) ratio. It also influences the overall absorber quality and gets worse at higher S/(S+Se). Furthermore, the device performance evaluated for similar CZTSSe TFSCs showed a linear increase and decrease in the open circuit voltage (V_oc) and short circuit current density (J_sc) of the device with an increasing S/(S+Se) ratio. The external quantum efficiency (EQE) measured also exhibited a linear blue shift in absorption edge, increasing the bandgap from 1.056 eV to 1.228 eV, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.582-587
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• 2023

The effects of the annealing temperature on the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films grown on quartz substrates by radio-frequency magnetron sputtering were investigated. The thin films were annealed at various annealing temperatures for 20 min in a rapid thermal annealer after growing the thin films. The experimental results showed that the annealing temperature has a significant effect on the properties of the SrWO₄:Sm³⁺ thin films. The crystal structure of the as-grown SrWO₄:Sm³⁺ thin films was transformed from amorphous to crystalline after annealing at 800℃. The preferred orientation along (112) plane and a significant increase in average grain size by 820 nm were observed with increasing the annealing temperature. The average optical transmittance in the wavelength range of 500~1,100 nm was decreased from 72.0% at 800℃ to 44.2% at an annealing temperature of 1,000℃, where the highest value in the photoluminescence intensity was obtained. In addition to the red-shift of absorption edge, a higher annealing temperature caused the optical band gap energy of the SrWO₄:Sm³⁺ thin films to fall rapidly. These results suggest that the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films can be controlled by varying annealing temperature.

• Nuclear Engineering and Technology
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• v.56 no.6
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• pp.2282-2291
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• 2024

In this work we study the effects of different factors of dislocation loop on its obstacle strength when interacting with an edge dislocation. At first, the interaction model for dislocation and dislocation loop is established and the full and partial absorption mechanism is obtained. Then, the effect of temperature, size and burgers vector of dislocation loop are investigated. The relation between the obstacle strength and irradiation dose has been established, which bridges the irradiation source and microscale properties. Except that, the obstacle strength of C, Cr, Ni, Mn, Mo and P decorated dislocation loop is studied. Results show that the obstacle strength for dislocation loop decorated by alloy element decreases in the sequence of Cr, Ni, Mn, C, P and Mo, which could be used to help parameterize and validate crystal plasticity finite element model and therein integrated constitutive laws to enable accounting for irradiation-induced chemical segregation effects.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.129-135
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• 1997

Undoped and Co-doped $ZnIn_2Se_4$ single crystals crystallized in the tetragonal space group 142m, with lattice constants a=5.748 $\AA$ and c=11.475 $\AA$, and a=5.567 $\AA$ and c=11.401 $\AA$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had an indirect band gap, the direct and the indirect energy gaps of these compounds decreased as temperature changed from 10 to 300 K. The temperature coefficients of the direct energy gaps were found to be $\alpha=3.71\times10^{-4}$eV/K and $\beta$=519 K for $\alpha=3.71\times10^{-4}$eV/K and $\beta$=421K for $ZnIn_2Se_4$: Co. The temperature coefficients of the indirect energy gaps were also found to be $\alpha=2.31\times10^{-4}$ eV/K and $\beta$=285 K for $ZnIn_2Se_4$, and $\alpha=3.71\times10^{-4}$eV/K and $\beta$=609 K for $ZnIn_2Se_4$:Co, respectively. Six impurity optical absorption peaks due to cobalt are observed in $ZnIn_2Se_4$:Co single crystal. These impurity optical absorption peaks can be attibuted to the electronic transitions between the split energy levels of$CO^{2+}$ ions located at Td symmetry site of $ZnIn_2Se_4$ host lattice. The 1st order spin-orbit coupling constant ($\lambda$), Racah parameter (B), and crystal field parameter (Dq) ARE GIVEN AS -$243\textrm{cm}^{-1}, 587\textrm{cm}^{-1}, \;and\;327\textrm{cm}^{-1}$, respectively.

• Bulletin of the Korean Chemical Society
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• v.27 no.9
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• pp.1310-1314
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• 2006

Sulfur-substituted $LiMn_{0.9}Cr_{0.1}O_{2-x}S_x$ $(0\;\leq\;x\;\leq\;0.1)$ layered oxides have been prepared by solid state reaction under inert atmosphere. From powder X-ray diffraction analyses, all the present lithium manganates were found to be crystallized with monoclinic-layered structure. Electrochemical measurements clearly demonstrated that, in comparison with the pristine $LiMn_{0.9}Cr_{0.1}O_2$, the sulfur-substituted derivatives exhibit smaller discharge capacities for the entire cycle range but the recovery of discharge capacity after the initial several cycles becomes faster upon sulfur substitution. The effect of the sulfur substitution on the chemical bonding nature of $LiMn_{0.9}Cr_{0.1}O_{2-x}S_x$has been investigated using X-ray absorption spectroscopic (XAS) analyses at Mn and Cr K-edges. According to Mn K-edge XAS results, the trivalent oxidation state of manganese ion remains unchanged before and after the substitution whereas the local structure around manganese ions becomes more distorted with increasing the substitution rate of sulfur. On the other hand, the replacement of oxygen with sulfur has negligible influence on the local atomic arrangement around chromium ions, which is surely due to the high octahedral stabilization energy of $Cr^{+III} $ ions. Based on the present experimental findings, we have suggested that the decrease of discharge capacity upon sulfur substitution is ascribable to the enhanced structural distortion of $MnO_6$ octahedra and/or to the formation of covalent Li-S bonds, and the accompanying improvement of cyclability would be related to the depression of Mn migration and/or to the pillaring effect of larger sulfur anion.

• Journal of the Korean Vacuum Society
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• v.13 no.2
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• pp.86-91
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• 2004

Transiton-metal gallides attract wide interest as a candidate for high-temperature structural materials. In a wide composition range, in which it was known that Co-Ga alloy have CsCl (B2) crystallographic structure, a systematic study on the correlation between physical properties and electronic structures of Co-gallides was performed. $Co_{l-x}Ga$ $_{x}$ alloys ($0.35\leq$x$\leq0.55$) were prepared by arc-melting method and were annealed at $1000 ^{\circ}C$ for 48hour to increase the homogeneity. In this composition range all the prepared alloys have the CsCl (B2) structure. The chemical states and the electronic structure were studied by using x-ray photoemission spectroscopy (XPS), and x-ray absorption near-edge structure (XANES), and exhibit different physical properties depending on the composition. During the annealing, a significant oxidation has happened and all the oxygen atoms are incorporated with the Ga atoms to form a $Ga_2O_3$ phase. In a view point of electronic structure, the $Co_{l-x}Ga$ $_{x}$ alloys were formed by the Ga(p) - Co(d) hybridization.

• Korean Journal of Soil Science and Fertilizer
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• v.46 no.4
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• pp.288-295
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• 2013

Nitrogen dioxide ($NO_2$) gas damage on vegetable crops commonly occurs in plastic film houses where relatively large amounts of $NO_3{^-}$ are applied in acid soils. In acid soils, $HNO_2$ can be formed from the $NO_2{^-}$ accumulated during denitrification, and $NO_2$ can be evolved from the chemical self-decomposition of $HNO_2$. In this study, $NO_2$ gas production and its detrimental effects on plants were investigated in soils of various conditions to elucidate the mechanisms involved in the gas production. A silty loam soil was amended with $NO_3{^-}$ (500 mg N $kg^{-1}$) and glucose, and pH and moisture of the soil were adjusted respectively to 5.0 and 34.6% water holding capacity (WHC) with 0.01 M phosphate buffer. The soil was placed in a 0.5-L glass jar with strawberry leaf or $NO_2$ gas absorption badge in air space of the jar, and the jar was incubated at $30^{\circ}C$. After 4-5 days of incubation, dark burning was observed along the outside edge of strawberry leaf and $NO_2$ production was confirmed in the air space of jar. However, when the soil was sterilized, $NO_2$ emission was minimal and any visible damage was not found in strawberry leaf. In the soil where water or $NO_3{^-}$ content was reduced to 17.3% WHC or 250 mg N $kg^{-1}$, $NO_2$ production was greatly reduced and toxicity symptom was not found in strawberry leaf. Also in the soil where glucose was not amended, $NO_2$ production was significantly reduced. In soil with pH of 6.5, $NO_2$ was evolved to the level causing damage to strawberry leaf when the soil conditions were favorable for denitrification. However, compared to the soil of pH 5.0, the $NO_2$ production and its damage to plants were much less serious in pH 6.5. Therefore, the production of $NO_2$ damaging plants might be occurred in acid soils when the conditions are favorable for denitrification.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.341-349
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• 2000

CsI(Br) single crystals doped with 1, 3, 5 or 10 mole% $Br^-$ ions, as an activator, were grown by Czochralski method. The lattice structure of grown CsI(Br) single crystal was bcc and its lattice constant was $4.568\;{\AA}$. The absorption edge of the CsI(Br) single crystals was observed at 243 nm. The spectral range of the luminescence excited by 243 nm of wavelength was $300{\sim}600\;nm$, and its peak emission appeared at 440 nm. The luminescence intensity was maximum when CsI(Br) was doped with 3 mole % $Br^-$ ions. The energy resolutions of the CsI(Br) scintillator doped with 3 mole % $Br^-$ ions were 15.0% for $^{137}Cs$(662 keV), 13.1% for $^{54}Mn$(835 keV), and 18.0% and 6.3% for $^{22}Na$(511 keV and 1275 keV), respectively. The decay curves had fast and slow components, and the fast component was about 41 ns independent on the concentration of the $Br^-$ ions. The time resolution of CsI(Br) scintillators decreased with increasing of the concentration of $Br^-$ ions.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.178-184
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• 2001

Transparent and highly oriented KLN thin films have been grown by an rf- magnetron sputtering deposition method. A homogeneous and stable KLN target was prepared by calcine and sintering process. For KLN target, stoichiometry and composition excess with K of 30% and 60%, and Li of 15% and 30% respectively, was prepared. The targets were sintered at low temperature to prevent vaporization of K and Li. KLN thin films were fabricated by rf-magnetron sputtering method using those targets. In this experiment, using the target of composition excessed with K of 60% and Li of 30%, single phase KLN thin film was produced. KLN thin film has excellent crystallinity and highly c-axis oriented on Corning 1737 substrate. Transmittance of thin film in visible range was 90%, absorption edge is 333 nm and refractive index at 632.8 nm was 1.93.

• Journal of the Korea Convergence Society
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• v.9 no.3
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• pp.257-263
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• 2018

Hyperthermia supplies RF high-frequency energy above 1MHz to the tumor tissue through the electrodes. And the temperature of the tumor tissue is increased to $42^{\circ}C$ or more to cause thermal necrosis. A mathematical model can be derived a human body model for absorption and transmission of electromagnetic energy in the human model and It is possible to evaluate the distribution of temperature fields in biological tissues. In this paper, we build the human model based on the adult standard model of the geometric shape of the 3D model and use the FVM code. It is assumed that Joule heat is supplied to the anatomical model to simulate the magnetic field induced by the external electrode and the temperature distribution was analyzed for 0-1,200 seconds. As a result of the simulation, it was confirmed that the transferred energy progressively penetrates from the edge of the electrode to the pulmonary tumors and from the skin surface to the subcutaneous layer.