• Title/Summary/Keyword: Absorber layer

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Selective Transmission Properties of Al-Ti Based Oxide Thin Films (Al-Ti계 산화물 박막의 조성에 따른 선택적 투과 특성)

  • Bang, Ki Su;Jeong, So Un;Lim, Jung Wook;Lee, Seung-Yun
    • Journal of the Korean Vacuum Society
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    • v.22 no.1
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    • pp.13-19
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    • 2013
  • It is expected that progress in building-integrated photovoltaic (BIPV) systems, improving the functionality and design of buildings, will be accelerated in the coming years. While the dye sensitized solar cell is considered one of the most important technologies in the BIPV field, the transparent silicon based thin film solar cell fabricated by thin film processes has drawn attention as a novel alternative. When the selective transmitting layer is applied to the solar cell, the conversion efficiency is improved due to the re-reflection of infrared light into an absorber layer with the transmission of visible light through the solar cell. In this work, we prepared Al-Ti based oxide thin films using cost-effective sputter deposition and examined their selective transmitting characteristics with various compositions. The transmittance and reflectance of the Al-Ti based oxide thin film changed with the variation of its composition, and the selective transmitting property was observed in the sample with the 25 nm-thick AlTiO layer. It is considered that the realization of transparent solar cells and the improvement of their conversion efficiency can be achieved by introducing the Al-Ti based selective transmitting layer.

Low-temperature Deposition of Cu(In,Ga)Se2 Absorber using Na2S Underlayer (Na2S 하부층을 이용한 Cu(In,Ga)Se2 광흡수층의 저온증착 및 Cu(In,Ga)Se2 박막태양전지에의 응용)

  • Shin, Hae Na Ra;Shin, Young Min;Kim, Ji Hye;Yun, Jae Ho;Park, Byung Kook;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.2 no.1
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    • pp.28-35
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    • 2014
  • High-efficiency in $Cu(In,Ga)Se_2$ (CIGS) solar cells were usually achieved on soda-lime glass substrates due to Na incorporation that reduces deep-level defects. However, this supply of sodium from sodalime glass to CIGS through Mo back electrode could be limited at low deposition temperature. Na content could be more precisely controlled by supplying Na from known amount of an outside source. For the purpose, an $Na_2S$ layer was deposited on Mo electrode prior to CIGS film deposition and supplied to CIGS during CIGS film. With the $Na_2S$ underlayer a more uniform component distribution was possible at $350^{\circ}C$ and efficiency was improved compared to the cell without $Na_2S$ layer. With more precise control of bulk and surface component profile, CIGS film can be deposited at low temperature and could be useful for flexible CIGS solar cells.

Study on Design and Performance of Microwave Absorbers of Carbon Nanotube Composite Laminates (탄소나노튜브 복합재 적층판을 활용한 전파흡수체의 설계 및 성능에 대한 연구)

  • Kim, Jin-Bong;Kim, Chun-Gon
    • Composites Research
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    • v.24 no.2
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    • pp.38-45
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    • 2011
  • In this paper, we present an optimization method for the single Dallenbach-layer type microwave absorbers composed of E-glass fabric/epoxy composite laminates. The composite prepreg containing carbon nanotubes (CNT) was used to control the electrical property of the composites laminates. The design technology using the genetic algorithm was used to get the optimal thicknesses of the laminates and the filler contents at various center frequencies, for which the numerical model of the complex permittivity of the composite laminate was incorporated. In the optimal design results, the content of CNT increased in proportion to the center frequency, but, on the contrary, the thickness of the microwave absorbers decreased. The permittivity and reflection loss are measured using vector network analyzer and 7 mm coaxial airline. The influence of the mismatches in between measurement and prediction of the thickness and the complex permittivity caused the shift of the center frequency, blunting of the peak at the center frequency and the reduction of the absorbing bandwidth.

Influence of Sputtering Conditions on Properties of Copper Oxide Thin Films (스퍼터링 공정 조건이 산화 구리 박막 특성에 미치는 영향)

  • Cho, Jae Yu;Heo, Jaeyeong
    • Current Photovoltaic Research
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    • v.5 no.1
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    • pp.15-19
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    • 2017
  • The fossil fuel power consumption generates $CO_2$, which causes the problems such as global warming. Also, the increase in energy consumption has accelerated the depletion of the fossil fuels, and renewable energy is attracting attention. Among the renewable energies, the solar energy gets a lot of attention as the infinite clean energy source. But, the supply level of solar cell is insignificant due to high cost of generation of electric power in comparison with fossil fuels. Thus several researchers are recently doing the research on ultra-low-cost solar cells. Also, $Cu_2O$ is one of the applied materials as an absorption layer in ultra-low-cost solar cells. Cuprous oxide ($Cu_2O$) is highly desirable semiconductor oxide for use in solar energy conversion due to its direct band gap ($E_g={\sim}2.1eV$) and a high absorption coefficient that absorbs visible light of wavelengths up to 650 nm. In addition, $Cu_2O$ has several advantages such as non-toxicity, low cost and can be prepared with simple and cheap methods on large scale. In this work, we fabricated the $Cu_2O$ thin films by reactive sputtering method. The films were deposited with a Cu target with variable parameters such as substrate temperature, rf-power, and annealing condition. Finally, we confirmed the structural properties of thin films by XRD and SEM.

Interface Analysis of Cu(In,Ga)Se2 and ZnS Formed Using Sulfur Thermal Cracker

  • Cho, Dae-Hyung;Lee, Woo-Jung;Wi, Jae-Hyung;Han, Won Seok;Kim, Tae Gun;Kim, Jeong Won;Chung, Yong-Duck
    • ETRI Journal
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    • v.38 no.2
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    • pp.265-271
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    • 2016
  • We analyzed the interface characteristics of Zn-based thin-film buffer layers formed by a sulfur thermal cracker on a $Cu(In,Ga)Se_2$ (CIGS) light-absorber layer. The analyzed Zn-based thin-film buffer layers are processed by a proposed method comprising two processes - Zn-sputtering and cracker-sulfurization. The processed buffer layers are then suitable to be used in the fabrication of highly efficient CIGS solar cells. Among the various Zn-based film thicknesses, an 8 nm-thick Zn-based film shows the highest power conversion efficiency for a solar cell. The band alignment of the buffer/CIGS was investigated by measuring the band-gap energies and valence band levels across the depth direction. The conduction band difference between the near surface and interface in the buffer layer enables an efficient electron transport across the junction. We found the origin of the energy band structure by observing the chemical states. The fabricated buffer/CIGS layers have a structurally and chemically distinct interface with little elemental inter-diffusion.

DESIGN OPTIMIZATION OF RADIATION SHIELDING STRUCTURE FOR LEAD SLOWING-DOWN SPECTROMETER SYSTEM

  • KIM, JEONG DONG;AHN, SANGJOON;LEE, YONG DEOK;PARK, CHANG JE
    • Nuclear Engineering and Technology
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    • v.47 no.3
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    • pp.380-387
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    • 2015
  • A lead slowing-down spectrometer (LSDS) system is a promising nondestructive assay technique that enables a quantitative measurement of the isotopic contents of major fissile isotopes in spent nuclear fuel and its pyroprocessing counterparts, such as $^{235}U$, $^{239}Pu$, $^{241}Pu$, and, potentially, minor actinides. The LSDS system currently under development at the Korea Atomic Energy Research Institute (Daejeon, Korea) is planned to utilize a high-flux ($>10^{12}n/cm^2{\cdot}s$) neutron source comprised of a high-energy (30 MeV)/high-current (~2 A) electron beam and a heavy metal target, which results in a very intense and complex radiation field for the facility, thus demanding structural shielding to guarantee the safety. Optimization of the structural shielding design was conducted using MCNPX for neutron dose rate evaluation of several representative hypothetical designs. In order to satisfy the construction cost and neutron attenuation capability of the facility, while simultaneously achieving the aimed dose rate limit (< $0.06{\mu}Sv/h$), a few shielding materials [high-density polyethylene (HDPE)eBorax, $B_4C$, and $Li_2CO_3$] were considered for the main neutron absorber layer, which is encapsulated within the double-sided concrete wall. The MCNP simulation indicated that HDPE-Borax is the most efficient among the aforementioned candidate materials, and the combined thickness of the shielding layers should exceed 100 cm to satisfy the dose limit on the outside surface of the shielding wall of the facility when limiting the thickness of the HDPE-Borax intermediate layer to below 5 cm. However, the shielding wall must include the instrumentation and installation holes for the LSDS system. The radiation leakage through the holes was substantially mitigated by adopting a zigzag-shape with concrete covers on both sides. The suggested optimized design of the shielding structure satisfies the dose rate limit and can be used for the construction of a facility in the near future.

Fabrication and Characteristics of C(IG)(SeS)2 Absorbers by Selenization and Sulfurization

  • Son, Young-Ho;Jung, Myoung-Hyo;Choi, Seung-Hoon;Choi, Jung-Kyu;Kim, Jin-Ha;Lee, Dong-Min;Park, Joong-Jin;Lee, Jang-Hee;Jung, Eui-Chun;Kim, Jung-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.361-361
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    • 2011
  • Cu(InGa)(SeS2) (CIGS) thin film solar cells have recently reached an efficiency of 20%. Recent studies suggest a double graded band gap structure of the CIGS absorber layer to be a key issue in the production of high efficiency thin film solar cell using by sputtering process method. In this study, Cu(InGa)(SeS2) absorbers were manufactured by selenization and surfulization, we have deposited CIG precusor by sputtering and Se layer by evaporation before selenization. The objective of this study is to find out surfulization effects to improve Voc and to compare with non-surfulization Cu(InGa)Se2 absorbers. Even if we didn't analysis Ga depth profile of Cu(InGa)(SeS2) absorbers, we confirmed increasing of Eg and Voc through surlization process. In non-surfulization Cu(InGa)Se2 absorbers, Eg and Voc are 0.96eV and 0.48V. Whereas Eg and Voc of Cu(InGa)(SeS2) absorbers are 1.16eV and 0.57V. And the efficiency of 9.58% was achieved on 0.57cm2 sized SLG substrate. In this study, we will be discussed to improve Eg and Voc through surfulization and the other method without H2S. gas.

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Adiabatic Performance of Layered Insulating Materials for Bulk LH2 Storage Tanks (대용량 액체 수소 저장탱크를 위한 다층단열재의 단열성능 분석)

  • KIM, KYEONGHO;SHIN, DONGHWAN;KIM, YONGCHAN;KARNG, SARNG WOO
    • Transactions of the Korean hydrogen and new energy society
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    • v.27 no.6
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    • pp.642-650
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    • 2016
  • One of the most feasible solution for reducing the excessive energy consumption and carbon dioxide emission is usage of more efficient fuel such as hydrogen. As is well known, there are three viable technologies for storing hydrogen fuel: compressed gas, metal hydride absorption, and cryogenic liquid. In these technologies, the storage for liquid hydrogen has better energy density by weight than other storage methods. However, the cryogenic liquid storage has a significant disadvantage of boiling losses. That is, high performance of thermal insulation systems must be studied for reducing the boiling losses. This paper presents an experimental study on the effective thermal conductivities of the composite layered insulation with aerogel blankets($Cryogel^{(R)}$ Z and $Pyrogel^{(R)}$ XT-E) and Multi-layer insulation(MLI). The aerogel blankets are known as high porous materials and the good insulators within a soft vacuum range($10^{-3}{\sim}1$ Torr). Also, MLI is known as the best insulator within a high vacuum range(<$10^{-6}{\sim}10^{-3}$ Torr). A vertical axial cryogenic experimental apparatus was designed to investigate the thermal performance of the composite layered insulators under cryogenic conditions as well as consist of a cold mass tank, a heat absorber, annular vacuum space, and an insulators space. The composite insulators were laminated in the insulator space that height was 50 mm. In this study, the effective thermal conductivities of the materials were evaluated by measuring boil-off rate of liquid nitrogen and liquid argon in the cold mass tank.

Effect of thermal treatment on spray deposited CdTe thin films (스프레이 증착법을 이용한 CdTe박막의 열처리에 따른 특성 분석)

  • Lee, Jinyoung;Hwang, Sooyeun;Lee, Taejin;Ryu, Siok
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.11a
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    • pp.49.2-49.2
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    • 2010
  • Polycrystalline CdTe thin films for solar cell continues to be a promising material for the development of cost effective and reliable photovoltaic processes. The two key advantages of this material are its high optical absorption coefficient and its near ideal band gap for photovoltaic conversion efficiency of 1.4-1.5 eV. In this study we made the CdTe thin films for solar cell application which was deposited on the glass substrates using a modified chemical spray method at low temperature. This process does not require the sophisticated and expensive vacuum systems. The prepared CdTe films were characterized with the aid of scanning electron microscope (SEM), UV-visible spectrophotometer, and X-ray diffraction spectrometer (XRD). Following are results of a study on the "Human Resource Development Center for Economic Region Leading Industry" Project, supported by the Ministry of Education, Science & Tehnology(MEST) and the National Research Foundation of Korea(NRF).

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Selenization of CIG Precursors Using RTP Method with Se Cracker Cell

  • Kang, Young-Jin;Song, Hye-Jin;Cho, You-Suk;Yoon, Jong-Man;Jung, Yong-Deuk;Cho, Dea-Hyung;Kim, Ju-Hee;Park, Su-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.426-426
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    • 2012
  • The CIGS absorber has outstanding advantages in the absorption coefficient and conversation efficiency. The CIGS thin film solar cells have been researched for commercialization and increasing the conversion efficiency. CIG precursors were deposited on the Mo coated glass substrate by magnetron sputtering with multilayer structure, which is CuIn/CuGa/CuIn/CuGa. Then, the metallic precursors were selenized under high Se pressure by RTP method which included. Se vapor was supplied using Se cracker cell instead of toxic hydrogen selenide gas. Se beam flux was controlled by variable reservoir zone (R-zone) temperature during selenization process. Cracked Se source reacted with CIG precursors in a small quantity of Se because of small size molecules with high activation energy. The CIGS thin films were studied by FESEM, EDX, and XRD. The CIGS solar cell was also developed by layering of CdS and ZnO layers. And the conversion efficiency of the CIGS solar cell was characterization. It was reached at 6.99% without AR layer.

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