• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.101-102
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• 2006

BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant, It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the sell-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS). respectively. The removal rate of BTO thin film using the $BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.59-60
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• 2006

The slurry stability and removal rate during recycling of slurry in silicon wafer polishing was studied. Average abrasive size of slurry was not changed with recycling time, however, large particles appeared as recycling time increased. Large particles were related foreign substances from pad or abraded silicon flakes during polishing. The removal rate as well as pH of slurry was decreased as recycling time increased. It suggests that the consumption of OH ions during recycling is the main cause of decrease of removal rate. Therefore, it is important to control pH of slurry to obtain optimum removal rate during polishing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.851-857
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• 2002

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi~level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40%. So, we focused how to reduce the consumption of raw slurry In this paper, we presented the pH changes of diluted slurry and pH control as a function of KOH contents. Also, the removal rates of slurry with different dilution ratio were investigated. Finally, the CMP characteristics were discussed as a function of silica (SiO$_2$) abrasive contents.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.719-722
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• 2004

In this work, we applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film. We compared the structural characteristics of BST $(Ba_{0.6}Sr_{0.4}TiO_3)$ films before and after the CMP process. Their dependence on slurry composition was also investigated. Finally, we suggest the self-developed titania $(TiO_2)$ mixed abrasive slurry (MAS) for FRAM applications. Our experimental results on the ferroelectric film are encouraging for the next generation of FRAM applications.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.935-938
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• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.18-22
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• 2002

CMP(chemical mechanical polishing) process has attracted as an essential technology of multilevel interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40%. So, we focused that it has how to reduce the consumption of raw slurry. In this paper, we presented the pH changes of diluted slurry and pH control as a function of KOH contents. Also, the removal rates of slurry with different dilution ratio was investigated. Finally, CMP the characteristics as a function of silica($SiO_2$) abrasive contents were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.542-542
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• 2008

본 논문에서는 기존에 상용화된 슬러리에 비해 새로운 혼합 연마제 슬러리의 우수성을 입증하고, 최적화 된 공정기술을 연구의 기반으로 활용하고자 Silica slurry에 $CeO_2$ 연마제를 혼합하여, 어떠한 연마 특성을 나타내는지 알아보았고, AFM, EDX, XRD, TEM 분석을 통해 그 가능성을 비교 분석하였다.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.06a
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• pp.319-326
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• 2001

The sliding wear characteristics of carbon steel castings were Investigated using a ball on disk type tester. The experiment was conducted using high carbon steel wire rods as ball material and carbon steel castings as disk material and different operating conditions, at room temperature under a lubrication and dry conditions. The results showed that the carbon steel castings appeared average wear volume Is lowed after annealing under a lubrication conditions and wear curve linear Increased. The specific wear rate of carbon steel castings Increased with wire diameter lubrication and dry also Increased 125 times In Ory. The sliding wear mechanism were Investigated due to fatigue wear lubrications and abrasive wear dries also wire Included fatigue and abrasive wear by plastic flow.

• Journal of Powder Materials
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• v.13 no.4 s.57
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• pp.250-255
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• 2006

Wear behaviors of gas atomized and extruded Al-Si alloys were investigated using the dry sliding wear apparatus. The wear tests were conducted on Al-Si alloy discs against cast iron pins and vice versa at constant load of 10N with different sliding speed of 0.1, 0.3, 0.5m/s. In the case of Al-Si alloy discs slid against the cast iron pins, the wear rate slightly increased with increasing the sliding speed due to the abrasive wear occurred between Al-Si alloy discs and cast iron pins. Conversely, in the case of cast iron discs against Al-Si alloy pins, the wear rate decreased with increasing the sliding speed up to 0.3m/s. However, the wear rate increased with increasing the sliding speed from 0.3m/s to 0.5m/s. It could be due to adhesive wear behavior and abrasive wear behavior_between cast iron discs and Al-Si alloy pins.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.969-972
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• 1997

Ultrasonic machining technology has been developed over recent years for he manufacture of cost-effective and quality-assured precision parts for several industrial application such as optics, semiconductors, aerospace, and automobile application. The past decade has seen a tremendous in the use of ceramic in structural application. The excellent thermal, chemical and wear resistance of these material can be realized because of recent improvement in the overall strength and uniformity of advanced ceramics. Ultrasonic machining, in which abrasive particles in slurry with water are presented to the work surface in the presence of an ultrasonic-vibrating tool, is process which should be of considerable interest, as its potential is not limited by he electrical or chemical characteristics of the work material, making it suitable for application to ceramics. In order to improve the currently used ultrasonic machining using ultrasonic energy, technical accumulation is needed steadily through development of exciting device of ultrasonic machine composed of piezoelectric vibrator and horn. This paper intends to further the understanding of the basic mechanism of ultrasonic machining for brittle material and ultrasonic machining of ceramics based in the fracture-mechanic concept has been analyzed.