• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 2004.03a
• /
• pp.294-299
• /
• 2004

An assessment of a novel laser-electric hybrid propulsion system was conducted, in which a laser-induced plasma was induced through laser beam irradiation onto a solid target and accelerated by electrical means instead of direct acceleration only by using a laser beam. A fundamental study of newly developed rectangular laser-assisted pulsed-plasma thruster (PPT) was conducted. On discharge characteristics and thrust performances with increased peak current compared to our previous study to increase effects of electromagnetic forces on plasma acceleration. Maximum peak current increased for our early study by increasing electromagnetic effects in a laser assisted PPT. At 8.65 J discharge energy, the maximum current reached about 8000 A. Plasma behaviors emitted from a thruster in various cases were observed with an ICCD camera. It was shown that the plasma behaviors were almost identical between low and high voltage cases in initial several hundred nanoseconds, however, plasma emission with longer duration was observed in higher voltage cases. Canted current sheet structures were also observed in the higher voltage cases using a larger capacitor. With a newly developed torsion-balance type thrust stand, thrust performances of laser assisted PPT could be estimated. The impulse bit and specific impulse linearly increased. On the other hand, coupling coefficient and the thrust efficiency did not increase linearly. The coupling coefficient decreased with energy showing maximum value (20.8 ？Nsec/J) at 0 J, or in a pure laser ablation cases. Thrust efficiency first decreased with energy from 0 to 1.4 J and then increased linearly with energy from 1.4 J to 8.6 J. At 8.65 J operation, impulse bit of 38.1 ？Nsec, specific impulse of 3791 sec, thrust efficiency of 8 %, and coupling coefficient of 4.3 ？Nsec/J were obtained.

• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 2017.05a
• /
• pp.543-546
• /
• 2017

Test equipment was designed and manufactured to evaluate thermal reaction characteristic of internal insulators of solid rocket motor. Test is allowed up to chamber pressure 2,500 psi, burn-time 40 s. It is possible to observe and to compare thermal reaction characteristic for a few materials simultaneously, under the condition that the ablation occurs. In efficient average chamber pressure 878 psi, efficient burn-time 10.7 s and gas velocity 100 m/s, test was executed for confirming safety of equipment, being 4 test materials inserted simultaneously. Basic data for understanding thermal characteristic of internal insulator, that is, pressure-time curve, temperature-time curve in the test sample, and thermal destruction depth of test samples was gained successfully.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.103-103
• /
• 1999

CeO2 는 cubic 구조의 일종인 CeF2 구조를 가지며 격자 상수가 0.541nm로 Si의 격자 상수 0.543nm와 거의 비슷하여 Si과의 부정합도가 0.35%에 불과하여 CeO2를 Si 기판 위에 에피택셜하게 성장시킬 수 있는 가능성이 크다. 따라서 SOI(Silicon-On-Insulator) 구조의 실현을 위하여 Si 기판위에 CeO2를 에피택셜하게 성장시키려는 많은 노력이 있었다. 또한 CeO2 는 열 적으로 대단히 안정된 물질로서 금속/강유전체/반도체 전계효과 트랜지스터(MFSFET : metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이에 완충층으로 사용되어 강유전체의 구성 원자와 Si 원자들간의 상호 확산을 방지함으로써 경계면의 특성을 향상시기키 위해 사용된다. e-beam evaporation와 laser ablation에 의한 Si 기판 위의 CeO2 격자 성장에 관한 많은 보고서가 있다. 이 방법들은 대규모 생산 공정에서 사용하기 어려운 반면 RF-magnetron sputtering은 대규모 반도체 공정에 널리 쓰인다. Sputtering에 의한 Si 기판위의 CeO2 막의 성장에 관한 보고서의 수는 매우 적다. 이 논문에서는 Ce target을 사용한 reactive rf-magnetron sputtering에 의해 Si(100) 과 Si(111) 기판위에 성장된 CeO2 의 구조 및 전기적 특성을 보고하고자 한다. 주요한 증착 변수인 증착 power와 증착온도, Seed Layer Time이 성장막의 결정성에 미치는 영향을 XRD(X-Ray Diffractometry) 분석과 TED(Transmission Electron Diffration) 분석에 의해 연구하였고 CeO2 /Si 구조의 C-V(capacitance-voltage)특성을 분석함으로써 증차된 CeO2 막과 실리콘 기판과의 계면 특성을 연구하였다. CeO2 와 Si 사이의 계면을 TEM 측정에 의해 분석하였고, Ce와 O의 화학적 조성비를 RBS에 의해 측정하였다. Si(100) 기판위에 증착된 CeO2 는 $600^{\circ}C$ 낮은 증착률에서 seed layer를 하지 않은 조건에서 CeO2 (200) 방향으로 우선 성장하였으며, Si(111) 기판 위의 CeO2 박막은 40$0^{\circ}C$ 높은 증착률에서 seed layer를 2분이상 한 조건에서 CeO2 (111) 방향으로 우선 성장하였다. TEM 분석에서 CeO2 와 Si 기판사이에서 계면에서 얇은 SiO2층이 형성되었으며, TED 분석은 Si(100) 과 Si(111) 위에 증착한 CeO2 박막이 각각 우선 방향성을 가진 다결정임을 보여주었다. C-V 곡선에서 나타난 Hysteresis는 CeO2 박막과 Si 사이의 결함때문이라고 사료된다.

• Journal of the Korean Vacuum Society
• /
• v.6 no.2
• /
• pp.114-121
• /
• 1997

The transparent conductiong thin films of tin oxides were prepared on pyrex glass substrates by the pulse laser deposition. In the atmospheres of vacuum, O2, and $Sn(CH_3)_4$ a polycrystalline $SnO_2$ target was ablated by Nd-YAG laser beam to deposit thin films on the substrates at room temperature, and as-deposited films were subsequently heat-treated in the air for 2 h at 230, 420 and $610^{\circ}C$, respectively. The characteristics of the thin films were examined by UV-VIS-NIR spectrometry and X-ray diffractometry, and the electrical properties were measured by four-point probe method along with film thickness monitored by the stylus method. It was observed that in the presence of $Sn(CH_3)_4$, $SnO_2$ phases were grown even at room temperature. This suggests that the microplasma producted during the laser ablation plays an important role in the dissociaation of precursor molecules.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2011.05a
• /
• pp.142-142
• /
• 2011

Epitaxial $CuCrO_2$ thin films have been grown on single crystal substrate of c-plane $Al_2O_3$, $SrTiO_3$, YSZ and Quarts by laser ablation of a $CuCrO_2$ target using 266nm radiation from a Nd:YAG laser. X-ray measurements indicate that the $CuCrO_2$ grows epitaxially on all substrate, with its orientation dependent on the kinds of substrates. Most of the layer were polycrystalline with (001), (015) and random as the dominant surface orientation on c-plane YSZ, $SrTiO_3$ and quarts substrate, respectively. (001) orientated $CuCrO_2$ grows on C-plane $Al_2O_3$ and YSZ substrate, (015) orientated $CuCrO_2$ films are found on c-plane $SrTiO_3$ substrate and random orientated $CuCrO_2$ films grows on quarts substrate. These data are compared with the in-plane orientation and the mismatch of the $CuCrO_2$ and each substrate lattices in an attempt to relate the preferred orientation to the plane of the sapphire on which it is grown. Further characterization show that the grain size of the films increases for a substrate temperature increase, whereas the electrical properties of $CuCrO_2$ thin films depend upon their crystalline orientation.

• Analytical Science and Technology
• /
• v.18 no.6
• /
• pp.483-490
• /
• 2005

Mass resolution of the time of flight aerosol mass spectrometer for an aerosol component analysis depends on the initial direction and the initial energy of the ions. We have found that the shape of the optimum post focusing electric field is not linear. The maximum electric potential should be applied to the ions whose initial direction is 90 degree. To check on the post focusing effects, we have installed a laser ablation mass spectrometer. By using this LA-MS, we have found that the average energy distribution of the laser ablated ions is 8 eV. To establish the optimum mass resolution, a time delay and a high voltage are needed, and the results of the study show that 1500 nsec, and 3.7 kV are the optimum parameters for our system respectively. The isotope mass signals of copper show a good resolution.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.16 no.9
• /
• pp.5748-5755
• /
• 2015

Scribing is cutting process to determine production amount and characteristic of LED chip. So it is an important process for fabrication of LED chip. Mechanical process and conventional scribing process with laser source has several problems such as thermal deformation, decreasing of material strength and limitation of cutting region. To solve these problems, internal laser scribing process that generates void in wafer and derives self-crack has been researched. However, studies of sapphire wafer cutting by internal laser scribing process for fabrication of LED chip are still insufficient. In this paper, cutting parameters were determined to apply internal laser scribing process for sapphire wafer for fabrication of LED chip. Then, foundation of cutting condition was established to set up internal laser scribing system through investigation of cutting characteristics by several experiments.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.6
• /
• pp.13-16
• /
• 2003

Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.200-203
• /
• 2003

A study on the arc resistance and light reflectance of PTFE (polytetrafluoroethylene) nozzle for circuit breaker is presented. PTFE has been used widely as a material for circuit breaker nozzle. PTFE has excellent electrical resistivity, high melt viscosity, chemical inertness, heat resistance and low loss factor. PTFE melts at $327\;^{\circ}C$ but the viscosity is very high above the melting point. In the arcing environment in a circuit breaker, the fraction of the power is emitted out of the arc and reaches the nozzle wall by radiation, causing ablation at the surface and in the depth of the wall. Some fraction of the radiation power emitted out of the arc directly break up the chemical bonds at the surface while some fraction of the radiation power penetrates into the wall, heats up the material to evaporation temperature and causes damages deeper inside the volume of the nozzle. In this paper, some fillers that have endurance in the high temperature arc environment were added into PTFE. Adding some fillers into PTFE was expected to be efficient in improving the endurability against radiation. The light reflectance and arc resistance of PTFE composites were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.204-207
• /
• 2003

This paper presents the electrical properties of PTFE (polytetrafluoroethylene) nozzle for circuit breaker. PTFE has been used widely as a nozzle material for circuit breaker. In the arcing environment in a circuit breaker, radiation is considered to be the major energy transport mechanism from the arc to the wall. The fraction of the radiation power is emitted out of the arc and reaches the nozzle wall, causing ablation at the surface and in the depth of the wall. The energy concentration in the material lead to the depolymerization and eventually lead to the generation of decomposed gas as well as some isolated carbon particles. The generation of the decomposed gas in the depth of the material causes inner explosion. The surface of nozzle becomes uneven. The flow of gas is not uniform due to the unevenness of the surface. Adding some fillers into PTFE is expected to be efficient for improving the endurability against radiation. In this experiment, three kinds of fillers that have endurance in the high temperature environment were added into PTFE. Dielectric constant, dissipation factor, electrical resistivity and dielectric strength of PTFE composites were investigated.