• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.23-27
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• 2010

We prepared Al doped ZnO thin film as a top electrode on a glass substrate with a deposited $Alq_3$ for the top emission organic Light emitting device (TEOLED) with facing target sputtering (FTS) method and radio-frequency (RF) sputtering method, respectively. Before the deposition of AZO thin film, we evaporated the $Alq_3$ on glass substrate by thermal evaporation. And we evaluated the damage of organic layer. As a result, PL intensity of $Alq_3$ on grown by FTS method showed higher than that of grown by RF sputtering method, so we found that the FTS showed the lower damage sputtering than RF sputtering. Therefore, we can expect the FTS method is promising the low-damage sputtering system that can be used as a direct sputtering on the organic layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.386-387
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• 2007

ICP-CVD(Inductively Coupled Plasma-Chemical Vapor Deposition)를 이용하여 플라즈마 처리에 따른 Al이 도핑된 ZnO(AZO) 박막의 표면 부착력과 굴절율, 표면거칠기에 관한 연구를 하였다. 플라즈마 처리는 인가전압, 시간을 변수로 하였고 반응 가스는 Ar을 사용하였다. 표면조성은 AFM, 광학적 특성은 UV-Vis 분광계를 이용한 광투과도 측정으로부터 굴절률과 밴드갭을 조사하였고 표면 부착력은 접촉각 분석기(제조사:Kruss)를 사용하여 조사하였다. 플라즈마 처리 시간이 길어짐에 따라 박막 표면의 거칠기가 커지고 부착력은 증가하는 것으로 나타났다.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.127.1-127.1
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• 2011

In this paper, ZnO:Al thin films with c-axis preferred orientation were prepared on Soda lime glass substrates by RF magnetron sputtering technique. AZO thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the AZO were vapor-deposited in the named order. It is well-known that post-annealing is an important method to improve crystal quality. For the annealing process, the dislocation nd other defects arise in the material and adsorption/decomposition occurs. The XRD patterns of the AZO films deposited with grey theory prediction design, annealed in a vacuum ambient($2.0{\times}10-3$Torr)at temperatures of 200, 300, 400 and $500^{\circ}C$ for a period of 30min. The diffraction patterns of all the films show the AZO films had a hexagonal wurtzite structure with a preferential orientation along the c-axis perpendicular to the substrate surface. As can be seen, the (002)peak intensities of the AZO films became more intense and sharper when the annealing temperature increased. On the other hand, When the annealing temperature was $500^{\circ}C$ the peak intensity decreased. The surface morphologies and surface toughness of films were examined by atomic force microscopy(AFM, XE-100, PSIA). Electrical resistivity, Gall mobility and carrier concentration were measured by Hall effect measuring system (HL5500PC, Accent optical Technology, USA). The optical absorption spectra of films in the ultraviolet-visibleinfrared( UV-Vis-IR) region were recorder by the UV spectrophotometer(U-3501, Hitachi, Japan). The resistivity, carrier concentration, and Hall mobility of ZnS deposited on glass substrate as a function of post-annealing.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.142-150
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• 2012

In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.64-67
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• 2006

RF 스퍼터링법을 이용하여 AZO(Al 2wt%, ZnO 98wt%)박막을 glass위에 증착한 후 증착 시간과 증착 압력에 따른 면저항, roughness 및 광투과도를 조사하였다. 본 연구에서 AZO박막의 면 저항은 4-point probe(Guardian, 402S)으로 측정하였으며 광투과도는 IR-VIS-UV spectrophotometer로 측정하였다. AZO 박막을 20분 증착하는 동안, 아르곤 flow양이 50, 100, 150sccm일 때 면저항은 $20\;{\Omega}/{\square}$이고, 200sccm일 때 $3744\;{\Omega}/{\square}$였다. AZO 박막의 두께를 일정하게 증착하는 동안, 아르곤 flow양이 50sccm일 때 면저항은 $49.6\;{\Omega}/{\square}$이고 100, 150, 200sccm일 때 $38{\Omega}/{\square}$였으며, 광투과도는 모두 80%이상을 보였다. Roughness는 각각 4.1nm, 7.6nm, 5.2nm, 16.9nm였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.456.2-456.2
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• 2014

Cu(In,Ga)Se2 (CIGS) 화합물은 태양광을 흡수하기에 가장 이상적인 약 1.04 eV의 에너지 금지대 폭과 높은 광흡수계수를 가지고 있으며, $450{\sim}590^{\circ}C$의 고온 공정에도 매우 안정하여 열 경화현상을 거의 보이지 않으므로 박막 태양전지로서 커다란 응용 잠재력을 갖고 있는 광흡수층 재료이다. CIGS 화합물 박막 태양전지의 효율은 연구실에서는 ~20%의 높은 효율을 보고하고 있으며, 모듈급에서도 ~13%의 효율을 보이고 있다. 그러나 CIGS 박막 태양전지를 대면적 또는 양산화에 적용하기 위해서는 20년 이상의 장기적인 수명을 보장할 수 있는 내구성을 갖추어야 한다. 본 연구에서는 CIGS 모듈의 장기적인 신뢰성을 평가하기 위해 CIGS PV 모듈을 대상으로 IEC-61646 규격을 이용하여 고온고습 시험 ($85^{\circ}C$/85% RH, 1000 h) 과 열충격 시험 ($-40^{\circ}C/140^{\circ}C$, 1000 cycles) 이 수행되었고, 두 종류의 가속 스트레스 시험 후에 모듈의 성능 저하에 영향을 미치는 요인들이 연구되었다. 또한, 모듈의 효율 저하의 원인을 규명하기 위해 투명전극 Al-doped ZnO (AZO)와 광흡수층 CIGS를 대상으로 고장분석을 수행하였다. AZO층과 CIGS층의 전기적 특성 분석, 결장상 분석 및 XPS 분석들을 종합하여 CIGS PV 모듈의 성능저하의 원인을 규명하였다.

• Korean Journal of Materials Research
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• v.16 no.6
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• pp.346-350
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• 2006

Al-doped ZnO (AZO) thin films were grown on type of glass#1737 substrates by DC magnetron sputtering. The structural, electrical and optical properties of the films were investigated as a function of various plasma discharge power. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The lowest resistivity was $6.0{\times}10^{-4}{\Omega}cm$ with the carrier concentration of $2.69{\times}10^{20}cm^{-3}$ and Hall mobility of 20.43 $cm^2/Vs$. The average transmittance in the visible range was above 90%.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.97.1-97.1
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• 2010

유연금속기판위에 DC 마그네트론 스퍼터링을 이용하여 Ag/ZnO 이중구조의 후면반사막을 증착하고 Ag 표면조도 변화에 따른 후면반사막의 반사특성 변화와 플렉서블 비정질 실리콘 박막 태양전지의 셀 특성에 미치는 영향을 조사하였다. Substrate구조를 갖는 플렉서블 실리콘 박막 태양전지에서는 실리콘 박막 광흡수층의 상대적으로 낮은 광 흡수율로 인하여 입사광에 대한 태양전지 내에서의 광 산란 및 포획이 태양전지 효율을 증대시키는데 매우 중요한 역할을 하는 것으로 알려져 있다. 플렉서블 실리콘 박막 태양전지에서의 후면반사막은 광 흡수층에서 흡수되지 않는 입사광을 다시 반사시켜 광 흡수를 증대시키며 이때 후면반사막 표면에서 반사 빛을 효율적으로 산란시켜 이동경로를 증대시킴으로써 광 흡수율을 더욱 향상시킬 수 있다. 본 연구에서는 유연금속 기판위에 Ag와 ZnO:Al($Al_2O_3$ 2.5wt%) 타겟을 사용한 DC 마그네트론 스퍼터링법으로 Ag/AZO 이중구조의 후면반사막을 제조하고, Ag 박막의 표면형상 변화와 이에 따른 후면반사막의 반사도 변화를 비교, 분석하였다. 증착 조건 변화에 따른 표면 형상 및 반사 특성은 Atomic Force Mircroscope(AFM), Scanning electron miroscopy(SEM), UV-visible-nIR spectrometry를 통하여 분석하였다. 서로 다른 표면 거칠기를 갖는 후면반사막 위에 n-i-p구조의 a-Si:H 실리콘 박막 태양전지를 제조한 후 태양전지 동작 특성에 미치는 영향을 조사하였다. n,p층은 13.56MHz PECVD, i층은 60MHz VHF CVD를 사용하여 각각 제조 하였으며, Photo I-V, External Quantum Efficiency(EQE) 분석을 통하여 태양전지 특성을 조사 하였다. SEM 분석결과 공정 온도가 증가 할수록 Ag 박막의 표면 결정립 크기도 증가하였으며, AFM분석을 통한 Root-mean-square(Rms)값은 상온에서 $500^{\circ}C$로 증착온도가 증가함에 따라 6.62nm에서 46.64nm까지 증가하였다. Ag 박막의 표면 거칠기 증가에 따라 후면반 사막의 확산 반사도도 함께 증가하였다. 공정온도 $500^{\circ}C$에서 증착된 후면반사막을 사용하여 a-Si:H 태양전지를 제조하였을 때 상온에서 제조한 후면반사막에 비하여 단락전류밀도 (Jsc)값은 9.94mA/$cm^2$에서 13.36mA/$cm^2$로 증가하였으며, 7.6%의 가장 높은 태양전지 효율을 나타내었다.

• Journal of the Optical Society of Korea
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• v.19 no.5
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• pp.508-513
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• 2015

A capacitive-type touch screen panel (TSP) composed of silver nanowire (AgNW) crossing electrodes and transparent bridge structures was fabricated on a polycarbonate film. The transparent bridge structure was formed with a stack of Al-doped ZnO (AZO) electrodes and SU-8 insulator. The stable and robust continuity of the bridge electrode over the bridge insulator was achieved by making the side-wall slope of the bridge insulator low and depositing the conformal AZO film with atomic layer deposition. With an extended exposure time of photolithography, the lower part of the SU-8 layer around the region uncovered by the photomask can be exposed enough to the UV light scattered from the substrate. This leads to the low side-wall slope of the bridge insulator. The fabricated TSP sample showed a large capacitance change of 22.71% between with and without touching. Our work supplies the technological clue for ensuring long-term reliability to the highly flexible and transparent TSP made by using conventional fabrication processes.