• YAKHAK HOEJI
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• v.5 no.1
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• pp.16-19
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• 1960

Quantitative determination of Arsenic acid by precipitation of Arsenic acid as ZnNH$_{4}$AsO$_{4}$ and titration of Zn in the precipitate by EDTA has been investigated. Conclusion are as follows; 1) ZnNH$_{4}$AsO$_{4}$ was Soluble in NH$_{4}$Cl-NH$_{4}$OH buffer solution of pH lo and back-titration was unnecessary as in the case of MGNH$_{4}$AsO$_{4}$. 2) The end point was clear whether AsO$_{4}$$^{-3}$ present or not. 3) More simple and rapid method than that of Gravi metric method. 4) Could be determined within 0.3% error.

• Journal of the Mineralogical Society of Korea
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• v.23 no.2
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• pp.117-124
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• 2010

The sorption of $AsO_4,\;SeO_3,\;CrO_4$ on schwertmannite and thermal analysis of sorbed samples were carried out. The results of sorption experiments showed that sorption characteristics of those three oxyanions on schwertmannite can be divided into two groups. The extent of sorption of $AsO_4$ and $SeO_3$ were 100% at up to 1 mM solution concentration, and they increased no more significantly. This can be interpreted as $AsO_4$ and $SeO_3$ substituting $SO_4$ in schwertmannite strucure by the ratio of 1 : 1. The extent of the sorption of $CrO_4$ was much lower than those of other two oxyanions. Thermal analysis was performed using two kinds of sorbed samples at 0.1 and 1.25 mM concentrations. The results of the thermal analysis showed that the samples sorbed by three different oxyanions have different thermal characteristics. The samples sorbed by $AsO_4$ showed smaller weight loss around $600^{\circ}C$ than the original loss of pure schwertmannite, and it is attributed to the substitution of $AsO_4$ for $SO_4$, which was caused by the loss of $SO_4$, than pure schwertmannite due to the substitution of $SO_4$ by $AsO_4$. It also showed additional weight loss around $600^{\circ}C$ due to the decomposition of $AsO_4$ at that temperature. The weight loss of samples sorbed by $SeO_3$ started at slightly lower temperature than that sorbed by $SO_4$ and kept that loss at wider temperature range, probably indicating that the decomposition of $SeO_3$ occurs at slightly lower temperature. However, for the samples sorbed by $CrO_4$, the weight loss caused by the decomposition of $SO_4$ was also smaller and there was no additional weight loss at higher temperature due to the thermal stability of $CrO_4$, indicating that $SO_4$ was also substituted by $CrO_4$ in schwertmannite. Sorption experiment and thermal analysis indicate that $CrO_4$ sorbs on schwertmannite by substiuting $SO_4$, but the affinity to $SO_4$ or instability of $CrO_4$ in scwertmannite structure probably prohibit perfect 1 : 1 substitution.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2000.06a
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• pp.269-275
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• 2000

The fretting wear characteristics of TiN coated Zircaloy-4 tube were investigated experimentally The fretting wear experiment was performed using TiN coated Zircaloy-4 tube as the fuel rod cladding material and uncoated Zircaloy-4 tube as one of grids. TiN coating is probably one of the most frequently and successfully used PVD coatings for the mitigation of fretting wear. In this study, TiN coating by PVD was employed for improvement of Zircaloy-4 tube fretting characteristics. The fretting tester was designed and manufactured for this experiment. TiN coated Zircaloy-4 tube was used as the moving specimen, uncoated ZircaBoy-4 tube as the stationary one. The number of cycles, slip amplitude and normal load were selected as main factors of fretting wear. The results of this research showed that the wear volume of TiN coated Zircaloy-4 tube increased as number of cycles, normal load and slip amplitude increase but the quantity of volume was lower than the case of uncoated Zircaloy-4 tube pairs.

• Korean Journal of Materials Research
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• v.30 no.12
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• pp.666-671
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• 2020

The electronic structure and magnetic properties of chalcopyrite (CH) AlGaAs2 with dopant Mn at 3.125 and 6.25 % concentrations are investigated using first-principles calculations. The CH AlGaAs2 alloy is a p-type semiconductor with a small band-gap. The AlGaAs2:Mn shows that the ferromagnetic (FM) state is the most energetically favorable one. The Mn-doped AlGaAs2 exhibits FM and strong half-metallic ground states.The spin polarized Al(Ga,Mn)As2 state (Al-rich system) is more stable than the (Al,Mn)GaAs2 state (Ga-rich system), which has a magnetic moment of 3.82mB/Mn. The interaction between Mn-3d and As-4p states at the Fermi level dominates the other states.The states at the Fermi level are mainlyAs-4p electrons, which mediate strong interaction between the Mn-3d and As-4p states. It is noticeable that the FM ordering of dopant Mn with high magnetic moment originates from the As(4p)-Mn(3d)-As(4p) hybridization, which is attributed to the partially unfilled As-4pbands. The high FM moment of Mn is due to the double-exchange mechanism mediated by valence-band holes.

• Proceedings of the ESK Conference
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• 1997.10a
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• pp.40-55
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• 1997

The purpose of this study are to examine the characters of the lower half body shape in the middle aged women and to make slacks patttern on the base of four difference body shapes as follows. The lower half body shapes were classified into 4 types on the basis of their lateral view silhouette, whose characters were summarized as followings. (1) "Type 1" meant the right body shape with the standard protrusion of abdomen and hips. (2) "Type 2" showed the body shape with prominent hips, which had the flat abdominal silhouette and the greatly curved hips silhouette. (3) "Type 3" was the body shape with the prominent abdomen and the flat hips, in which the frontal view silhouette of the abdomen was greatly curved and the rear view silhouette of hips is less curved. (4) "Type 4" was characterized with prominent abdomen and hips. The slaks patterns were based on the lower half body shape characters and resulted in followings. (1) In the type 1, little difference from conventional patterns was seen in experiment pattern, in which the front waist girth was W/4{\times}0.5cm+0.5cm+fold(2.5cm) and the back waist girth W/4+0.5cm-0.5cm+dart(3.5cm). The front hip girth was defined as H/4+2.0cm+0.5cm and the back hip girth as H/4+2.0cm-0.5cm due to its increased ease amount produced by abdominal fat deposition. (2) In the type 2 experimental pattern, the front and back differences of the waist girth and the hip girth were defined as 1.0cm and 2.0cm separately. Accordingly, the front waist girth was W/4+0.5cm+ 1.0cm+fold(2.0cm), the back waist girth W/4+0.5cm-1.0cm+dart(6.5cm), the front hip girth H/4+2.0cm+1.0cm and the back hip girth H/4+2.0cm-1.0cm. (3) In type 3, the front waist girth was set up as W/4+0.5cm+0.5cm+fold (4.5cm) for the increased front fold amount and the back waist girth was W/4+0.5cm+0.5cm+dart(3.0cm). The front hip girth was made as H/4+2.5cm+0.5cm and the back hip girth H/4+2.5cm-0.5cm. (4) In type 4, considered were $\circled1$ the increased fornt fold amount due to the abdonimal protrusion, $\circled2$ the increased back dart amount and the decreased back dart length owing to the hips prominent and $\circled3$ the front and back differences of waist and hip girth for the lateral view silhouette. Therefore the front waist girth was defined as W/4+0.5cm+2.0cm+flod (5.0cm), the back waist girth as W/4+0.5cm-20.cm+dart(4.0cm), the front hip girth as H/4+2.0cm+1.0cm and the back hip girth as H/4+2.0cm-1.0cm. The sensory evaluation of appearance and comfort was appeared more suitable on the experiment pattern than on the conventional pattern.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.155-155
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• 2011

반도체 양자링은 양자점과 같이 효율이 높은 광학 소자 및 전자 소자에 응용 가능할 뿐 아니라, 양자점과는 다른 흥미로운 현상 연구가 가능하기 때문에 지속적으로 연구되고 있는 양자 구조이다. 특히, 반도체 양자링은 다양한 양자 구조를 형성하기 위한 기초 구조로 사용될 수 있으므로, 반도체 양자링 구조의 형성 메카니즘을 연구하는 것 또한 중요하다. 본 연구에서는 Molecular Beam Epitaxy (MBE)를 이용하여 N-type (100) GaAs 기판 위에 GaAs 양자 구조를 형성하였다. As4 분압의 영향, 즉 3-5 ratio가 표면 양자 구조 변화에 미치는 영향을 관찰하기 위해 3족과 5족을 분리하여 성장하는 전형적인 성장 방식인, droplet epitaxy mode를 사용하였다. 성장 온도, Ga metal droplet 밀도 등의 조건을 고정하고 Arsenic 분압을 1e-5 torr부터 3e-8 torr로 감소시켰을 때 표면 이미지를 AFM과 SEM으로 관찰하였다. As4 분압이 1e-5 torr일 때 양자점의 표면 형상을 보여주다가 As4 분압을 줄여갈수록 양자점의 크기가 증가하면서 As4 분압 1e-6 torr에서는 SEM 이미지 상으로도 분명한 양자링을 관찰할 수 있었다. 특히 주목할 것은 As4 분압 1e-6 torr에서 더 줄여갈수록 양자링 중앙 부분의 낮은 부분이 점점 넓어졌다는 점이다. 이것은 As4 분압 1e-6 torr 이상의 조건이 As4와 Ga atom이 결합하여 GaAs 양자점을 형성하는데 적절한 3-5 ratio의 조건인 반면, 그보다 적은 As4 분압에서는 As4와 결합하지 못한 Ga atom의 표면 migration에 의한 driving force로 인해 양자링이 형성되었다고 추측할 수 있다. 이렇게 형성된 양자링을 열처리 후 macro-PL 측정을 통해 광학적 특성을 보고자 하였다. 그 결과 같은 조건에서 열처리되어 PL 측정한 양자점의 에너지에 비해 peak position이 blue shift한 것을 볼 수 있었다. 이것은 As4를 제외한 같은 조건에서 성장된 양자 구조에서 양자링의 경우 양자점에 비해 그 높이가 낮음을 추측해 볼 수 있다. 양자 구조의 모양과 광학 특성의 관계를 밝히기 위해 추후 추가 측정 및 분석이 필요할 것이다.

• Journal of Industrial Technology
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• v.24 no.B
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• pp.59-64
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• 2004

GaAs thin films were grown epitaxially by MOCVD method on (001) GaAs substrate. And as a surfactant, Bi(bismuth) thin films were deposited on GaAs buffer layer by using TMBi(trimethylbismuth) source. In-situ reflectance difference spectroscopy(RDS) was used to monitor the surface reconstruction of GaAs and Bi thin films. As the results, under the exposure of TBAs(tertiarybuthylarsine) and hydrogen atmosphere, the surface reconstruction of GaAs was changed from As-rich c($4{\times}4$) to As-rich ($2{\times}4$), which was due to the adsoption and desorption of As dimers. The first bismuth surface related RDS signal was reported. At the deposition temperature of $450^{\circ}C$, Bi-terminated GaAs surface showed the RDS spectrum similar to that of Sb-terminated GaAs surface, possibly a ($2{\times}4$) surface. And Bi surface layers were rapidly evaporated with increasing the deposition temperature($550^{\circ}C$), finally becoming As-terminated ($2{\times}4$) surface.

• Journal of the Mineralogical Society of Korea
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• v.25 no.2
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• pp.85-94
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• 2012

The $AsO_4$ ion in acid mine drainage has been known to substitute for $SO_4$ in schwertmannite and prevent schwertmannite from being converted to goethite. There have been studies on the heavy metal sorption on schwertmannite, but no experimental results have been reported on the characteristics of heavy metal sorption on $AsO_4$-substituted schwertmannite. In this study, we conducted sorption experiments of Cu, Pb, and Zn on the $AsO_4$-substituted schwertmannite at pH 4 and 6 in the solution of 3, 10, 30, and 100 mg/L concentrations. For all heavy metals, the sorbed heavy metals significantly increase at pH 6 compared with at pH 4. At both pH 4 and 6, Pb shows the highest sorption capacity and those of Cu and Zn are similar. With increasing time, the sorbed heavy meal contents increase too. However, in the case of Zn, the most sorptions occur at the initial stage and no significant increase is observed with time. Among the concentration ranges in which we conducted the experiment, the increasing trend is clear in high concentrated solutions such as 100 mg/L. We applied several sorption kinetic model and it shows that the diffusion process may be the most important factor controlling the sorption kinetics of Cu, Pb, and Zn on $AsO_4$-substituted schwertmannite. Considering the previous results that pure schwertmannite has similar sorption capacity for all three heavy metals at pH 6 and has higher sorption capacity for Cu and Pb than Zn at pH 4, our experiments indicates that substitution of $AsO_4$ for $SO_4$ on schwertmannite changes surface and sorption characteristics of schwertmannite. It also shows that $AsO_4$ contributes not only to the stability of schwertmannite, but also to the mobility of heavy metals in acid mine drainage.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.449-455
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• 2011

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.4}Al_{0.6}As$ buffer layer have been investigated by using photoluminescence (PL) and time-resolved PL measurements. A 1-${\mu}m$-thick $In_{0.4}Al_{0.6}As$ buffer layers were deposited at various temperatures from $320^{\circ}C$ to $580^{\circ}C$ on a 500-nm-thick GaAs layer, and then 1-${\mu}m$-thick $In_{0.5}Al_{0.5}As$ layers were deposited at $480^{\circ}C$, followed by the deposition of the InGaAs/InAlAs MQWs. In order to study the effects of $In_{0.4}Al_{0.6}As$ layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of $In_{0.4}Al_{0.6}As$ buffer layer. The MQWs consist of three $In_{0.5}Al_{0.5}As$ wells with different well thicknesses (2.5-nm, 4.0-nm, and 6.0-nm-thick) and 10-nm-thick $In_{0.5}Al_{0.5}As$ barriers. The PL peaks from 4-nm QW and 6-nm QW were observed. However, for the MQWs on the $In_{0.4}Al_{0.6}As$ layer grown by using the largest growth temperature variation (320-$580^{\circ}C$), the PL spectrum only showed a PL peak from 6-nm QW. The carrier decay times in the 4-nm QW and 6-nm QW were measured from the emission wavelength dependence of PL decay. These results indicated that the growth temperatures of $In_{0.4}Al_{0.6}As$ layer affect the optical properties of the MQWs.

• Composites Research
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• v.12 no.4
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• pp.8-16
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• 1999

In this study, when the applied directions of tensile loading is changed fatigue damage of quasi-isotropic composite laminates was discussed. Low cycle fatigue tests of $[0/-60/+60]_s$ laminates and $[+30/-30/90]_s$ laminates were carried out. Material systems used were AS4/Epoxy and AS4/PEEK. The fatigue damage of $[+30/-30/90]_s$ laminates differed from that of $[0/-60/+60]_s$ laminates. The position of delamination generated at AS4/Epoxy and AS4/PEEK $[+30/-30/90]_s$ laminates appeared differently according to the kind of matrix. Critical values of strain energy release rate were obtained by using the strain measured at the initiation of delamination. The experimental results agreed well with the results obtained by the proposed method for determining strain energy release rate.