• Current Photovoltaic Research
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• v.8 no.1
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• pp.1-5
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• 2020

The most important factor in enhancing the performance of an optical device is to minimize reflection and increasing transmittance of light for a broad wavelength range. The choice of appropriate coating material is crucial in decreasing reflection losses at the substrate. The purpose of this review is to highlight anti-reflection coating (ARC) materials that can be applied to silicon solar cell and glass substrate for minimizing reflection losses. The optical and electrical behavior of ARC on a substrate is highly dependent on thickness and refractive index (RI) of ARC films that are being deposited on it. The coating techniques and performance of single and multi-layered ARC films after coated on a substrate in a wide range of wavelength spectrum will be studied in the paper.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.349-349
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• 2014

ITO는 결정질 실리콘 태양전지의 anti-reflection coating (ARC) 층으로써 적합한 물질이다. ARC layer로써 구조적, 전기적 그리고 광학적 최적 조건의 특성을 얻기 위해는 높은 figure of merit(FOM)를 가져야 하고 결정방향 제어를 해야 한다. 본 연구에서는 결정질 실리콘 태양전지에 가장 적합한 ITO ARC layer의 특성 찾기 위해 Radio frequency magnetron sputter를 이용하여 공정 조건가변 실험을 진행 하였으며 높은 FOM을 갖는 ITO 반사방지막을 shallow emitter형 결정질 실리콘 태양전지에 적용하였으며 ITO 박막은 shallow emitter층과 완벽한 ohmic 접합을 이루었다. ITO ARC layer를 적용한 Shallow emitter형 태양전지는 81.59%의 fill factor와 $35.52mA/cm^2$의 단락전류를 보이며 17.27%의 광변환 효율을 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.221-222
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• 2008

In Crystalline Si solar cells, Anti-Reflection Coating is contribute to improvement in energy conversion efficiency due to decrease of optical loss and recombination owing to surface passivation. Porous Si is formed electrochemical etching that uses chemical solution and anodization etching. So It gives that advantage in rapid process time and without high cost equipment. In this paper, We compare Porous Si with $SiO_2$/SiNx ARC and analyze that by anti-reflection coating.

• Current Photovoltaic Research
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• v.10 no.4
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• pp.95-100
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• 2022

Solar cell is a device that converts photon energy into electrical energy. Therefore, absorption of solar spectrum light is one of the most important characteristics to design the solar cell structures. Various methods have emerged to reduce optical losses, such as textured surfaces, back contact solar cells, anti-reflection layers. Here, the anti-reflection coating (ARC) layer is typically utilized whose refractive index value is between air (~1) and silicon (~4) such as SiN_x layer (~1.9). This research is to print a material called polydimethylsiloxane (PDMS) to form a double anti-reflection layer. Light with wavelength in the range of 0.3 to 1.2 micrometers does not share a wavelength with solar cells. It is confirmed that the refractive index of PDMS (~1.4) is an ARC layer which decreases the reflectance of light absorption region on typical p-type solar cells with SiN_x layer surface. Optimized PDMS printing with analyzing optical property for cell structure can be the effective way against outer effects by encapsulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.235-235
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• 2010

The Anti-reflection coating(ARC) properties can be formed on silicon substrate using a simple electrochemical etching technique. This etching step can be improve solar cell efficiency for a solar cell manufacturing process. This paper is based on the removal of silicon atoms from the surface a layer of porous silicon(PSi). Porous silicon is form by anodization and can be obtained in an electrolyte with hydrofluoric. It have demonstrated the feasibility of a very efficient porous Si layer, prepared by a simple, cost effective, electrochemical etching method. We expect our research can results approaching to lower than 10% of reflectance by optimization of process parametaer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.152-153
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• 2006

본 연구에서는 태양전지 표면에 입사된 광자의 반사손실을 최소화하기 위한 방법으로써 기판 표면에 다공성 실리콘층을 이용한 반사방지막 (Anti-Reflection Coating, ARC)을 형성하는 실험을 하였다. 다공성 실리콘(Porous silicon, PSi)은 실온에서 일정 비율로 만든 전해질 용액($HF-C_2H_5OH-H_2O$)을 사용하여 실리콘 표면을 양극산화처리 함으로써 단순 공정만으로 실리콘 기판의 반사율을 높일 수 있다. 또한 새로운 레이어(layer)없이 기존 기판을 식각시켜 만들기 때문에 박막형 태양전지를 제작시 적용이 용이하다. 저비용, 단순공정의 이점을 살려 전류밀도에 따른 PSi의 반사방지막으로써의 특성을 비교 분석하였다.

• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.367-370
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• 2009

It is important to reduce a reflection of light as a solar cell is device that directly converts the energy of solar radiation to electrical energy in oder to improve efficiency of solar cells. The antireflection coating has proven effective in providing substantial increase in solar cell efficiency. This paper investigates the formation of thin film PSi(porous silicon) layer on the surface of crystalline silicon substrates without other ARC(antirefiection coating) layers. On the other hand the formation of $SO_{2}/SiN_x$ ARC layers on the surface of crystalline silicon substrates. After that, the structure of PSi and $SO_2/SiN_x$ ARC was investigated by SEM and reflectance. The formation of PSi layer and $SO_{2}/SiN_x$ ARC layers on the textured silicon wafer result about 5% in the wavelength region from 0.4 to $1.0{\mu}m$. It is achieved on the textured crystalline silicon solar cell that each efficiency is 14.43%, 16.01%.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.295-298
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• 2007

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating(ARC) and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si ARC layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated with SEM. The formation of a nanoporous Si layer about 100nm thick on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.77-78
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• 2006

In order to increase the efficiency of LED, transparent electrodes should be also developed. also suitable anti-reflection coating (ARC) is necessary for practical device applications. In our paper, Al-doped ZnO (AZO) films were fabricated by sputtering on GaP substrate(wavelength:620nm). Choosing optimum substrate temperature and sputtering rate, high quality AZO films were formed. We confirmed that the surface and electrical properties, which implemented using the methods of AFM, Hall measurement. The properties of AZO thin films especially depended on the thickness. We presumed that the change of the increase the external quantum efficiency of LED according to the AZO thin film of thickness.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.05a
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• pp.89-91
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• 2007

In order to decrease the degradation of phosphor on anode, many kinds of methods try to do coating of phosphor powders and AI metal layer of anode phosphor, In case of direct coating of phosphor powder, thin and uniform coating process are difficult to cover homogeneous in the surface of phosphor powders and given rise to decrease the brightness, Anti-reflection-layer(ARC) with $TiO_2$, $Al_2O_3$, $Y_2O_3$ showed 103[%] the enhancement of brightness in comparable with normal phosphor layer.