• 제목/요약/키워드: AR spectra

검색결과 147건 처리시간 0.022초

BOES imaging performance variation using FWHM of ThAr reference spectra

  • Kang, A-Ram;Hyunjin Jeong;Lee, Jae-Woo;Kim, Sug-Whan
    • 한국우주과학회:학술대회논문집(한국우주과학회보)
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    • 한국우주과학회 2004년도 한국우주과학회보 제13권1호
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    • pp.94-94
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    • 2004
  • We report an investigation of BOES imaging performance variation against observational variables. Average FWHM of the ThAr reference spectra recorded in 10 spectral image frames observed during the night of January 5th, 2004 was computed. The averaged FWHM data was then correlated with observational variables including telescope altitude, air mass, focus position, exposure time, detector temperature, gain settings and S/N ratio. (omitted)

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가스 유입량이 기상이동법으로 금 나노박막위에 성장된 산화아연 입자에 미치는 영향 (Influence of gas flow on structural and optical properties of ZnO submicron particles grown on Au nano thin films by vapor phase transport)

  • 김소아람;남기웅;김민수;박형길;윤현식;임재영
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2012년도 춘계학술발표회 논문집
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    • pp.211-212
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    • 2012
  • ZnO submicron particles were grown on Au-catalyzed Si substrate by a vapor phase transport (VPT) growth process under different mixture gas ratio at growth temperature of $900^{\circ}C$. The structural and optical properties of the ZnO submicron particles were investigated by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL). The ZnO submicron particles could be clustered with the $O_2/Ar$ mixture gas ratio(%) higher than 10%, and it was mainly determined by the gas ambient. Particularly, when the $O_2/Ar$ mixture gas ratio was 30%, it was observed the ZnO submicron particles with diameters in the range of 125 to 500 nm and the narrowest full width at half maximum (FWHM) of XRD and PL spectra with $0.121^{\circ}$ and 92 meV, respectively. It was found that the structural and optical properties of the ZnO submicron particles were improved with increasing the $O_2/Ar$ mixture gas ratio through the XRD and PL spectra.

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Ar이 이온주입된 Si 기판의 결함회복 특성 (Annealing Behavior of Ar Implant Induced Damage in Si)

  • 김광일;이상환;정욱진;배영호;권영규;김범만;삼야박
    • 한국진공학회지
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    • 제2권4호
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    • pp.468-473
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    • 1993
  • Damages on Si substrate induced by Ar ion implantation and it annealing behavior during rapid thermal annealing were investigated by the cross-sectional TEM (transmissin electron microscopy), RB(Rutherfordbackscattering) spectra an dthermal wave (TW) modulation reflectance methods. Continuous amorphous layer extending to the surface were generated by Ar ion implantation for higher doses than 1 $\times$1015cm-2. The recrystallization of the amorphous layer prodeeded as the annealing temperature increased . However the amorphous /crystal interfacial undulations caused the micro twins and damage clusters. Damage clusters generated by lower doses than 1 $\times$1015 cm-2 disappeared slowly as the annealing temperature increased, but even at 110$0^{\circ}C$ a few damage clusters still remained.

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혼합기체 O2/Ar+O2 농도 변화가 Mn 도핑된 SnO2 투명전도막의 상 안정성에 미치는 영향 (Effect of O2/Ar+O2 concentration on phase stability of transparent Mn doped SnO2 monolayer film)

  • 김태근;장건익
    • 한국결정성장학회지
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    • 제31권4호
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    • pp.154-158
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    • 2021
  • 550 nm 파장대에서 O2/Ar+O2 혼합기체 농도비가 0에서 7.9 %로 변화 시 Mn 도핑된 SnO2 투명전도막의 투과율은 80.9에서 85.4 %로 밴드갭 에너지는 3.0에서 3.6 eV로 증가하였다. 비저항은 O2/Ar+O2 혼합기체 농도비가 0에서 2.7 %까지 증가 시 3.21 Ω·cm에서 0.03 Ω·cm으로 감소하다 이후 7.9 %로 증가 시에는, 52.0 Ω·cm으로 급격하게 상승하였다. XPS 분석결과 혼합기체 O2/Ar+O2에서 O2 농도의 증가로 Sn3d5/2의 결합에너지가 486.40에서 486.58 eV로, O1s의 결합에너지도 530.20에서 530.34 eV로 조금 변화하였다. 따라서 스파터링 방법으로 제조한 Mn 도핑된 SnO2 투명전도막에서 O2 농도변화에 따라 SnO와 SnO2 2개의 상이 공존하는 것을 확인하였다.

대향타겟트 스파터기에서 반응성 플라즈마의 스펙트로스코프 검진 (Spetroscopic Diagnostics of Reactive Plasma in a Facing Target Sputtering Unit)

  • 나종갑;이택동;박순자
    • 한국재료학회지
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    • 제2권5호
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    • pp.337-342
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    • 1992
  • 대향타겟트형 스파터기에서 BaO-l2Fe 복합타겟트를 사용하고 50% $O_2$+Ar 스파터가스를 사용한 반응성 프라즈마를 스펙트로스포프법으로 검진하였다. 프라즈마의 스펙트럼은 Ba, B$a^+$, Fe, FeO, F$e^+$, Ar, $Ar^+$, O, $O^+$의 피크로 이루어져 있었으며 타겟트로 부터 멀어짐에 따라 이온의 상대강도는 중성원소의 그것에 비하여 더 감소하였다.

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마그네트런 스퍼터링법으로 증착한 투명전극용 Al도핑된 ZnO의 공정 분위기에 따른 구조적, 전기적, 광학적 특성비교 (Dependence of the Structural, Electrical, and Optical Properties of Al-doped ZnO Films for Transparent Conductors on the Process Atmosphere in Magnetron Sputtering)

  • 임근빈;이종무
    • 한국재료학회지
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    • 제15권8호
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    • pp.518-520
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    • 2005
  • Effects of the $O_2/Ar$ flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of Al-doped ZnO thin films deposited on sapphire (001) substrates by RF magnetron sputtering were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM of the (002) XRD intensity peak for the $O_2/Ar$ flow ratio of 0.5. The (101)peak also appeared and the degree of preferred orientation decreased as the $O_2/Ar$ flow ratio increased from 0.5 to 1.0. AFM analysis results showed that the surface roughness was lowest at the $O_2/Ar$ flow ratio of 0.5 and tended to increase owing to the increase of the grain size as the $O_2/Ar$ flow ratio increased further. According to the Hall measurement results the carrier concentration and carrier mobility of the fan decreased and thus the resistivity increased as the $O_2/Ar$ flow ratio increased. The transmittance of the ZnO:Al film deposited on the glass substrate was characteristic of a standing wave. The transmittance increased as the $O_2/Ar$ flow ratio in-RF magnetron sputtering increased up to 0.5. Considering the effects of the $O_2/Ar$ flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum $O_2/Ar$ flow ratio was 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

EFFECT OF ARGON AND OXYGEN PLASMAS ON VARIOUS POLYETHYLENE SHEETS

  • Chen, Yashao;Hirayama, Naoki;Gomi, Masaki;Kiuchi, Kenji;Momose, Yoshihiro
    • 한국표면공학회지
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    • 제32권3호
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    • pp.344-350
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    • 1999
  • The surface chemical structure of three kinds of polyethylene (PE): high density (HD) PE, low density (LD) PE and linear (L)-LDPE exposed to Ar and $O_2$ plasmas has been investigated using XPS. Oxygen was incorporated in a more increased amount for HDPE than for L-LDPE and LDPE. Ar plasma tended to incorporate more oxygen than $O_2$ plasma. The XPS valence band spectra for Ar plasma exhibited a clear peak assigned to $O_2$s character. By chemical derivatization method it was found that the amount of -COOH group at the surface was much greater than that of -OH group. The hydrophilic nature of plasma-treated PE increased in the order: LDPE

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변색 효과 보석들의 분광학적 특성 (Spectroscopic Characteristics of Gemstones with Color Change Effect)

  • 안용길;서진교;박종완
    • 한국광물학회지
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    • 제22권2호
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    • pp.81-86
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    • 2009
  • 변색 효과를 보이는 6종의 보석들을 대상으로 UV-Vis 분광분석과 Photoluminescence에 의한 발광 및 형광 특성을 조사하였다. 514 nm Ar이온 source로 PL을 측정한 결과 발광 피크의 모양이 다르게 나타났고 같은 천연과 합성 보석에서는 동일한 피크가 나타났다. 이들 발광 및 형광 특성은 보석들의 결정 구조와 관련이 있음을 관찰할 수 있었다. 325 nm He-Cd source에 의한 형광 조사에서는 합성 알렉산드라이트와 합성 칼라체인지 사파이어 그리고 천연 알렉산드라이트에서 강한 형광이 나타났고 이를 PL 피크로 확인하였다.

RF 마그네트론 스퍼터링법에 의한 Y3Al5O12:Ce 형광체 박막의 성장 거동 및 발광 특성 (Growing Behavior and Luminescent Properties of Y3Al5O12:Ce Phosphor Thin Films grown by rf Magnetron Sputtering)

  • 김주원;김영진
    • 한국재료학회지
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    • 제15권8호
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    • pp.548-553
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    • 2005
  • Trivalent cerium$(Ce^{3+})$ activated YAG (yttrium aluminum garnet, $Y_3Al_5O_{12})$) thin films phosphor were deposited on quartz glass substrates by rf magnetron sputtering. The effects of sputtering parameters, annealing atmosphere, and substrates on growing behaviors and luminescent properties were investigated. The sputtering parameters were $O_2/(Ar+O_2)$ gas ratio, rf power, and deposition time. XRD (X-ray diffractometery) spectra exhibited that as-deposited films were amorphous, while they were transformed to the crystalline phases by post-annealing. The crystallinity and the atomic ratio strongly depended on the sputtering gas ratio $O_2/(Ar+O_2)$. High quality YAG:Ce thin films could be obtained at the gas ratio of $50\%$ oxygen. After annealing process, PL (Photoluminescence) spectra excited at 450nm showed a yellow single band at 550nm. The films deposited at the sputtering gas ratio of 50% oxygen exhibited the highest PL intensity.