• 센서학회지
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• 제28권2호
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• pp.101-105
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• 2019

ZnS substrates with excellent transmittance in the mid-infrared region ($3-5{\mu}m$) were prepared using hot pressing instead of conventional chemical vapor deposition (CVD). Diamond-like carbon(DLC) was coated on either one or both sides of the ZnS substrates to improve their mechanical properties and transmittance. More specifically DLC was coated using CVD with an Ar and $C_2H_2$ mixed gas, and Ge was used as the bonding layer. During CVD, the bias voltage was fixed to 500 V and analyzed by Fourier transform infrared spectroscopy (FT-IR), nanoindenter, scanning electron microscope and energy dispersive spectrometry. Results of hardness analysis using the nanoindenter, showed that DLC coating increased from 5.9 to 17.7 GPa after deposition. The FT-IR spectroscopy results showed that, in the mid-infrared region ($3-5{\mu}m$), the average transmittance of the samples with DLC coating on one and both sides increased by approximately 6% and approximately 11.2% respectively. In conclusion, the DLC coating improved the durability and transmittance of the ZnS substrates.

• 열처리공학회지
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• 제18권5호
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• pp.281-287
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• 2005

Titanium aluminium nitride((TiAl)N) film is anticipated as an advanced coating film with wear resistance used for drills, bites etc. and with corrosion resistance at a high temperature. In this study, (TiAl)N thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773 K by using a two-facing-targets type DC sputtering system in a mixture Ar and $N_2$ gases. Atomic compositions of the binary Ti-Al alloy target is Al-rich (25Ti-75Al (atm%)). Process parameters such as precursor volume %, substrate temperature and Ar/$N_2$ gas ratio were optimized. The crystallization processes and phase transformations of (TiAl)N thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy. The microhardness of (TiAl)N thin films were measured by a dynamic hardness tester. The films obtained with Ar/$N_2$ gas ratio of 1:3 and at 673 K substrate temperature showed the highest microhardness of $H_v$ 810. The crystallized and phase transformations of (TiAl)N thin films were $Ti_2AlN+AlN{\rightarrow}TiN+AlN$ for Ar/$N_2$ gas ratio of 1:3, $Ti_2AlN+AlN{\rightarrow}TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 1:1 and $TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN{\rightarrow}Ti_2AlN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 3:1. The above results are discussed in terms of crystallized phases and microhardness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.56-59
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• 2000

In this study, Ferroelectric $Pb(Zr_x,Ti_{1-x})O_3$(x=0.53) thin films were fabricated by the spin-coating on the Pt/Ti/$SiO_2$/Si substrate using the PZT metal alkoxide solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar(20)$/Cl_2/BCl_3$ plasma. The etch rate of PZT film was 2450 ${\AA}/min$ at Ar(20)$/BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. The leakage current densities of before etching and after etching PZT thin film were $6.25\times10^{-8}A/cm^2$, $8.74\times10^{-7}A/cm^2$ with electric field of 0.07MV/em, respectively.

• 전자공학회논문지A
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• 제29A권2호
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• pp.55-62
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• 1992

Polycrystalline silicon ingots were manufactured using the casting method for polycrystalline silicon solar cells. These ingots were cut into wafers and ten n$^{+}$p type solar cells were made through the following simple process` surface etching, n$^{+}$p junction formation, metalization and annealing. For the grain boundary passivation, the samples were oxidized in O$_2$ for 5 min. at 80$0^{\circ}C$ prior to diffusion in Ar for 100 min. at 95$0^{\circ}C$. The conversion efficiency of polycrystalline silicon solar cells made from these wafers showed about 70-80% of those of the single crystalline silicon solar cell and superior conversion efficiency, compared to those of commercial polycrystalline wafers of Wacker Chemie. The maximum conversion efficiency of our wafers was indicated about 8%(without AR coating) in spite of such a simple fabrication method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.39-42
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• 2000

The effect of excess Pb contents on the etching of PZT thin films and their electrical properties has been investigated. Ferroelectric PZT(53/47) thin films were prepared by the metal alkoxide-based Sol-Gel method, in which they were spin-coating on P7Ti/Si02/Si substrate using the PZT(53/47) stock solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar/Cl$_2$/BCl$_3$ plasma. The etch rate of PZT film was 2450 $\AA$/min at Ar(20)/BCl$_3$(80) gas mixing ratio and substrate temperature of 8$0^{\circ}C$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 춘계학술대회 논문집
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• pp.128-129
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• 2015

Al-rich coatings were prepared on hot rolled low carbon steel by hot dipping method in molten Al-bath to investigate the corrosion resistance with the possible outcomes and defects of aluminized coatings in air and $Ar-0.2%SO_2$ mixed gases. Coating microstructure was composed of an inner Al-Fe intermetallic layer and outer Al-rich layer. Aluminum oxidized preferentially to the thin, outer, protective ${\alpha}-Al_2O_3$ layer, without forming the nonprotective iron/sulfur-oxide layer after heating at $800^{\circ}C$ for 20 h, in both the gases and provided the resistance against corrosion.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 춘계학술대회 논문집
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• pp.122-122
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• 2015

Al-rich coatings were prepared on hot rolled low carbon steel by hot dipping method in molten Al-bath to investigate the corrosion resistance with the possible outcomes and defects of aluminized coatings in air and $Ar-0.2%SO_2$ mixed gases. Coating microstructure was composed of an inner Al-Fe intermetallic layer and outer Al-rich layer. Aluminum oxidized preferentially to the thin, outer, protective ${\alpha}-Al_2O_3$ layer, without forming the nonprotective iron/sulfur-oxide layer after heating at $800^{\circ}C$ for 20h, in both the gases and provided the resistance against corrosion.

• 한국광학회지
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• 제8권6호
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• pp.466-470
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• 1997

광학 다층박막 증착법으로 비정질 $As_2S_3$를 중간층으로 하고 앞뒷면 거울의 반사율을 다르게 한 비대칭 Fabry-Perot 에탈론을 구성하고 광의 편광에 따른 광쌍안정 현상을 관찰하였다. 사용된 중간층의 광학적 두께는 광원인 $Ar^+$($\lambda $=514.5 nm) 레이저 광에 대하여 2$\lambda$가 되도록 하였다.$Ar^+$레이저의 출력이 80~100 mW일 때 광쌍안정 현상이 관측되었고, 입사되는 광의 각 편광상태에 따라 반사와 투과하는 광의 경향이 서로 다름을 알 수 있었으며, 이는 광의 편광에 따른 비대칭 Fabry-Perot 에탈론내에서의 위상차가 입사광의 세기에 따라 다르기 때문인 것으로 해석되어질 수 있다.

• Journal of the Optical Society of Korea
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• 제17권1호
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• pp.1-4
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• 2013

For the conventionally polished fused silica substrate, an around 100 nm depth redeposition polishing layer was formed on the top of surface. Polishing compounds, densely embedded in the redeposition polishing layer were the dominant factor that limited the laser induced damage threshold (LIDT) of transmission elements in nanosecond laser systems. Chemical etching, super-precise polishing and ion beam etching were employed in different ways to eliminate these absorbers from the substrate. After that, Antireflection (AR) coatings were deposited on these substrates in the same batch and then tested by 1064 nm nano-pulse laser. It was found that among these techniques only the ion beam etching method, which can effectively remove the polishing compound and did not induce extra absorbers during the disposal process, can successfully improve the LIDT of AR coatings.

• 한국정보통신학회논문지
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• 제5권4호
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• pp.777-790
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• 2001

광통신용 광섬유의 최저손실 파장영역인 1.55w에서 고출력으로 안정하게 동작하는 SLD를 설계하기 위하여 이론적인 해석을 수행하였다. 활성영역과 SCH층의 재료는 Int-xGaxAsyPl-y를 이용하였다. 활성영역의 측방향과 횡방향 모드해석으로부터 단일모드 고출력 동작을 위한 광전력분포와 광가둠계수를 구하였으며, 이들 계산으로부터 최대 광가둠계수를 얻기 위한 SCH층의 조성과 두께를 계산하였다. 낮은 반사도를 얻기 위하여 후면 에 윈도우 영역을 두었고 활성영역과 윈도우 영역의 계면이 측방향으로 각도를 가지게 하였으며 가우시안빔 근사와 모드해석으로부터 반사도를 계산하였다. $1.3\mum$ InGaAsP를 SCH층으로 하였을 때 최대의 광가둠계수를 얻기 위한 SCH층의 두께는$0.08\mum$정도이었다. 10-4정도의 반사도를 얻기 위해서는 활성층의 두께를 $0.2\mum$, SCH 층의 두께를 $0.08\mum$ 로 하였을 때 무반사코팅을 하지 않을 경우 윈도우 영역의 길이는 $100\mum$ 정도이고, 반사도 1% 정도의 무반사 코팅을 할 경우 $10\mum$ 정도가 된다. 측면 경사각이 $10~15^{\circ}$이면 반사도는 10-3정도가 된다. 이들 결과로부터 AR코팅을 하지 않고도 윈도우 영역의 길이와 측면 경사각을 적당히 조절한다면 안정적으로 동작하는 SLD의 제작이 가능하다는 것을 알 수 있다.