• Journal of the Korean Ceramic Society
• /
• v.25 no.2
• /
• pp.143-153
• /
• 1988

In order to synthesize the partially stabilized $\alpha$-Sialon, A1N and Y2O3 were added to synthesized $\alpha$-Si3N4. The phase composition, mechanical properties, micro structure, etc, of the synthesized $\alpha$-Sialon were investigated. Partially stabilized $\alpha$-Sialon ceramics could be synthesized from the composition which was a little deviated from x=0.4, x=0.6 composition along the Si3N4.0.1Y2O3:0.9AlN tie line at 1750-180$0^{\circ}C$ for 2 hrs in N2 atmosphere. It is assumed that A1N is more closely related than Y2O3 to the formation of $\alpha$-Sialon, and that A1N is more easily dissolved into $\alpha$-structure than into $\beta$-structure. In Ya2O3-rich phase mechanical properties were observed to be poor because of formation of mellilite, grain growth, and thermal decomposition of $\alpha$-Sialon. The maximum values of M.O.R, KIC and hardness are 723 MPa, 4.5MN/㎥/2 and 19.3 GPa, respectively, and they were observed for the $\alpha$-Sialon ceramics sintered at 178$0^{\circ}C$.

• The Korean Journal of Ceramics
• /
• v.3 no.4
• /
• pp.257-262
• /
• 1997

Aluminum nitride(AIN) thin films were deposited on SiO$_2$/Si substrates by reactive sputtering for the application of SAW devices. The major deposition parameters such as pressure, nitrogen fraction, rf power, substrate distance were changed to find out the optimal condition for c-axis oriented thin films on an amorphous substrate. The effects of deposition parameters on the crystal structure, residual stress, and growth morphology of thin films were characterized by XRD, SEM, and TEM. The FWHM of (002) rocking curve of the films deposited at the proper condition was lower than 2.2$^{\circ}$(C=0.93$^{\circ}$). Cross-sectional TEM showed that self-aligned structure was developed just after slightly random growth at the initial stage. The frequency characteristics of test device fabricated from AIN thin films confirmed their piezoelectric property and applicability for SAW devices.

• The Korean Journal of Ceramics
• /
• v.5 no.3
• /
• pp.224-229
• /
• 1999

The preparation and toughening of SiC-AIN solid solution from powder mixtures of $\beta$-SiC, AIN and $\alpha$-SiC by hot-pressing were studied in the 1870 to $2030^{\circ}C$ temperature range. The reaction of AIN and $\beta$-SiC(3C) powders causing transformation to the 2H(wurtzite) structure appeared to depend on hot-pressing temperatures and an additive of $\alpha$-SiC. For the composition of 49wt% SiC with 2 wt% $\alpha$-SiC and 47.5 wt% AIN47.5wt% SiC with 5 wt % $\alpha$-SiC at 203$0^{\circ}C$ for 1 h, th complete solid solutions with a single phase of 2H could be obtained. The appreciable amount of $\alpha$-SiC could develop the columnar inter-grains of 4H phase and the stable 2H phase with the relatively uniform composition and grain size distributions. The effect of $\alpha$-SiC on the phases present and compositional microstructures with columnar inter-grains was invetigated using X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The fracture toughness and Vickers hardness of the hot-pressed solid solutions wre examined by the indentation-fracture-test method.

• Korean Journal of Materials Research
• /
• v.8 no.1
• /
• pp.58-63
• /
• 1998

5-64.3mol% AI$_{2}$O$_{3}$를 함유하는 AIN(1wt% $Y_{2}$O$_{3}$)의 1650-190$0^{\circ}C$ 상압소결에 따른 치밀화 거동, 미세구조, 열전도도가 검토 되었다. XRD 분석결과, AION(5NIN \ulcorner9 AI$_{2}$O$_{3}$ ), 27R AIN다형, AIN이 소결체의 주상으로서 동정되었다. AI$_{2}$O$_{3}$ 의 함량이 증가할수록 소결체의 부피밀도는 증가 하였다. AION을 기지상으로 하는 물질($\geq$ 30mol% AI$_{2}$O$_{3}$ )인 경우는 175$0^{\circ}C$ 소결에서 최대의 부피밀도를 나타내었으며, AIN을 기지상으로 하는 경우(5mol% AI$_{2}$O$_{3}$ ) 는 소결온도가 증가할수록 밀도가 감소하였다. $Y_{2}$O$_{3}$의 존재하에서 주로 185$0^{\circ}C$이상에서 AI$_{2}$O$_{3}$ 와 AIN의 반응에 으해서 액상이 생성되었다. AION을 기지로 하는 물질의 치밀화는 주로 액상의생성 및 AION의 입성장에 의해서 지배되었으나, AIN을 기지로 하는 물질에 있어서는 1$650^{\circ}C$에서 액상이 생성되었고, 소결온도가 190$0^{\circ}C$까지 상승할 동안 AIN의 입성장은 크게 일어나지 않았다. AI$_{2}$O$_{3}$ 함량이 증가할수록 낮은 열도도를 갖는 다량의 AION 및 액상의 생성으로 인하여 소결체의열전도도는 감소 하였다. 5mol% AI$_{2}$O$_{3}$ 를 함유한 190$0^{\circ}C$ 소결체가 최대의 열전도도(77.9W/(m\ulcornerk))를 나타내었다.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2002.10a
• /
• pp.223-226
• /
• 2002

Appropriate design/manufacturing conditions, to give outstanding material properties to the $Si_3$$N_4$-BN and AIN-BN based composite materials, will be investigated using the experimental design methods. Ultra-precision machinability of the developed ceramics will be systematically studied in the viewpoint of microstructure and material properties. Also, finite element methods will be applied to define basic principles to significantly improve machinability and various properties. Basic experiments will be performed to develop optimum ultra-precision machining technologies for the developed ceramics. For ultra-precision lapping machining, need to develop a ultra-precision lapping system, suitable metal bonded diamond wheel, and appropriate condition of ultra-precision lapping machining.

• The Korean Journal of Ceramics
• /
• v.2 no.4
• /
• pp.184-187
• /
• 1996

Diamod nucleation by mw assisted CVD was examined various conditions namely, (1) diamond nucleation on variour substrate materials, such as Si, cubic BN, pyrolytic BN and AIN, (2) AST(Activated species transport) method which promote nucleation of diamond on single crystal and polycrystalline alumina substrate was developed. (3) Effect of bias enhancement of nucleation on single crystalline Si was examined, and finally (4) DST (Double step treatment) method was developed to enhance diamond nucleation on Ni. In this method, we separated carbon diffusing process into Ni, carbon precipitating process from the inside of Ni and diamond precipitation process.

• Membrane and Water Treatment
• /
• v.10 no.6
• /
• pp.451-460
• /
• 2019

Thin film composite membranes incorporated with nano-sized hydrophilic zeolite -A were successfully prepared via interfacial polymerization (IP) on porous blend PES/PAN support for water desalination. The thin film nanocomposite membranes were characterized by SEM, contact angle and performance test with 7000 ppm NaCl solution at 7bar. The results showed that the optimum zeolite loading amount was determined to be 0.1wt% with permeate flux 29LMH.NaCl rejection was improved from 69% to 92% compared to the pristine polyamide membrane where the modified PA surface was more selective than that of the pristine PA. In addition, there was no significant change in the permeate flux of the thin film nanocomposite membrane compared with that of the pristine PA in spite of the formation of the dense polyamide layer. The stability of the polyamide layer was investigated for 15 days and the optimized membrane presented the highest durability and stability.

• Journal of Welding and Joining
• /
• v.13 no.3
• /
• pp.134-146
• /
• 1995

Aluminium nitride(AlN) is currently under investigation as potential candidate for replacing alumium oxide(Al$_{2}$ $O_{3}$) as a substrate material for for electronic circuit packaging. Brazing of aluminium nitride(AlN) to Cu with Ag base active alloy containing Ti has been investigated in vacuum. Binary Ag$_{98}$ $Ti_{2}$(AT) and ternary At-1wt.%Al(ATA), AT-1wt.%Ni(ATN), AT-1wt.% Mn(ATM) alloys showed good wettability to AlN and led to the development of strong bond between brate alloy and AlN ceramic. The reaction between AlN and the melted brazing alloys resulted in the formation of continuous TiN layers at the AlN side iterface. This reaction layer was found to increase by increase by increasing brazing time and temperature for all filler metals. The bond strength, measured by 4-point bend test, was increased with bonding temperature and showed maximum value and then decreased with temperature. It might be concluded that optimum thickness of the reaction layer was existed for maximum bond strength. The joint brazed at 900.deg.C for 1800sec using binary AT alloy fractured at the maximum load of 35kgf which is the highest value measured in this work. The failure of this joint was initiated at the interface between AlN and TiN layer and then proceeded alternately through the interior of the reaction layer and AlN ceramic itself.