• 한국진공학회지
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• 제14권4호
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• pp.201-206
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• 2005

본 연구에서는 HVPE (Hydride Vapor Phase Epitaxy) 방법으로 Si 위에 GaN/AIN/Al/Si 구조를 제작하고, AlN 버퍼층의 두께에 따른 광학적 특성을 조사함으로써 효과적인 eaN 성장을 위한HVPE에서의 공정 방법을 개선하고자 하였다. 이를 위해 Al을 증착한 Si 기판과 그렇지 않은 경우를 PL측정을 통해 그 효과를 관찰하였고, $5{\AA}$ 두께의 Al 대해 AlN 버퍼층의 두께를 변화시켜가면서 GaN를 성장시켜 그 특성을 조사하였다. Al을 증착한 경우가 증착하지 않은 경우에 비해 광학적 특성이 우수한 것으로 나타났으며, AlN의 두께 변화에 대해서는 양질의 GaN를 얻기 위한 최적의 두께는 약 $260{\AA}$ 인 것으로 나타났다. 이 경우 SEM을 이용한 표면사진에서 GaN의 초기성장이 hexagonal형태로 성장되고 있음을 관찰할 수 있었다. 또한 XRD의 회절 패턴은 GaN가 {0001} 방향으로 우선 배향성을 가지고 성장되고 있음을 보여주고 있었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.477-480
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• 2004

We studied the characteristics of impedance and electromechanical coupling coefficient in ZnO and AIN thin films by using resonance frequency spectrum method. The response peak of impedance decreased with the decrease of thickness of piezoelectrics, the number of mode of response peak increased with the increase of substrate thickness. An error of $k_{t}^{2}$ estimated from input $k_{t}^{2}$ increased as the thickness of piezoelectrics decreased and the thickness of substrate increased. Also, the error was increased in case of a large acoustic impedance of substrate. It was found that the composite resonator operating in optimized condition could be designed through the resonance frequency spectrum analysis of composited resonator consisted of piezoelectric thin film and substrate.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1865-1867
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• 2005

Film bulk acoustic resonator (FBAR) devices which adopt an air-gap type (metai/AlN/metal/air/substrate) configuration are fabricated by a novel process. The newly fabricated resonator doesn't employ any supporting layer below it. FBAR devices with the air-gap type are also fabricated using the conventional method. The frequency response characteristics of all the devices fabricated are measured and compared, in terms of the kinds of top and bottom electrode materials. The results show that the better device performance of FBAR devices can be achieved by employing the proposed process.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.118-118
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• 2000

New single-source precursor, [AlCI3:NH2tBu] was synthesized for AlN thin f film processing with AICI3 (Aluminum Chloride) and tBuNH2 (tert-butylamine). AlN thin films for packaging aspplication were deposited on sapphire substrate by a atmosph하ie-pressure MOCVD. In most of other study methyl-based AI precursors w were used for source, But herein Aluminum Chloride was used for as AI source i in order to prevent the carbon contamination in the films and stabilize the p precursor. New precursor showed the very high gas vapor pressure so it allowed to m make the film under atmospheric-pressure and get the high purified film. High q quality AlN thin film was obtained at 700 to $900^{\circ}C$. The new precursor was p purified by a sublimation technique and help to fabricate high purity film. It s showed high vapor pressure, which is able to a critieal factor for the high purity a and atmospheric CVD of AlN. High Quality AIN thin film was obtained at $700-900^{\circ}C$. The AIN film was characterized by RBS

• 한국진공학회지
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• 제7권4호
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• pp.320-327
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• 1998

원격 플라즈마 화학기상증착법(Remote Plasma Enhanced-Ultrahigh Vacuum Chemical Vapor Deposition)에 의해 활성화된 질소 원자를 사용하여 사파이어 기판의 표면 을 저온에서 질화처리한 후 표면의 화학적 조성을 조사하였다. 질화처리에 의해 주로 표면 에 형성된 물질은 AIN임을 X-선 광전자 분광방법(X-ray photoelectron spectroscopy:XPS) 을 사용하여 확인하였다. 또한 플라즈마의 RF 출력, 반응 온도 및 시간에 따라서 기판의 Al 과 반응한 질소의 상대적인 양과, 표면 형태를 XPS와 AFM(atomic force microscopy)을 사 용하여 조사하였다. 플라즈마에 의해서 질소는 RF출력에 따라 증가한 후 일정하게 됨을 관 찰하였다. 그러나 질화 처리 온도와 시간의 증가에 따른 AIN의 상대적인 양은 비교적 무관 함을 관찰하였다. 또한 Ar스퍼터링을 통한 XPS의 depth profile을 관찰한 결과 질화층은 깊 이에 따라 3개의 다른 층으로 이루어져 있음을 확인하였다.

• The Korean Journal of Ceramics
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• 제2권4호
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• pp.184-187
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• 1996

Diamod nucleation by mw assisted CVD was examined various conditions namely, (1) diamond nucleation on variour substrate materials, such as Si, cubic BN, pyrolytic BN and AIN, (2) AST(Activated species transport) method which promote nucleation of diamond on single crystal and polycrystalline alumina substrate was developed. (3) Effect of bias enhancement of nucleation on single crystalline Si was examined, and finally (4) DST (Double step treatment) method was developed to enhance diamond nucleation on Ni. In this method, we separated carbon diffusing process into Ni, carbon precipitating process from the inside of Ni and diamond precipitation process.

• 한국전자파학회논문지
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• 제13권10호
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• pp.1048-1053
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• 2002

본 논문에서는 2 GHz 대역의 격자형 및 평형 구조를 가지는 박막공진 여파기를 설계, 제작하고 분석하였다. 단위공진자의 앞전물질은 AIN를 사용하였고, 전극도체로는 백금을 사용하였으며, 하부도체와 기판사이에 공기층이 있는 구조로 제작되었다. 제작된 여파기들은 크기가 작고 낮은 삽입손실과 격자형의 경우 약 15 dB, 평형 구조의 경우 약 30 dB 정도의 선택도를 가진다. 격자형 및 평형 구조는 사다리형 구조와 같이 실리콘 기판위에 제작되었으며, 사다리형 구조에 비해 넓은 대역폭을 가지며 평형구조의 경우 이외의 튜닝과정 없이 RF 여파기로 사용될 수 있다.

• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.828-833
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• 2000

Growth characteristics and microstructure of AIN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the micorstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.509-512
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• 2001

Aluminum nitride(AlN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AlN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, $200^{\circ}C$ of substrate temperature and 15 mTorr of working pressure. The leakage current density was less then $1.3{\times}10^{-7}A/cm^{2}$. And it was also investigated the etching properties of deposited AlN thin films for application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.50-53
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• 1994

In this study. we report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, GaInN, AlGaN/GaN double hetero-structure (DH) and AlGaN/GaInN DH which grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate using an AIN buffer-layer. The peak wavelength of the stimulated emission at RT from AlGaN/GaN DH is 370nm and the threshold of excitation pumping power density (P$\_$th/) is about 89㎾/$\textrm{cm}^2$, and they from AlGaN/GaInN DH are 403nm and 130㎾/$\textrm{cm}^2$, respectively. The P$\_$th/ of AlGaN/GaN and AlGaN/GaInN DHs are lower than the bulk materials due to optical confinement within the active layers of GaN and GaInN. The optical gain and the polarization of stimulated emission characteristics are presented in this article.