• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.48.1-48.1
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• 2010

Cu has been used for metallic interconnects in ULSI applications because of its lower resistivity according to the scaling down of semiconductor devices. The resistivity of Cu lines will affect the RC delay and will limit signal propagation in integrated circuits. In this study, we investigated the characteristics of electroplated Cu films according to the variation of concentration of organic additives. The plating electrolyte composed of $CuSO_4{\cdot}5H_2O$, $H_2SO_4$ and HCl, was fixed. The sheet resistance was measured with a four-point probe and the material properties were investigated with XRD (X-ray Diffraction), AFM (Atomic Force Microscope), FE-SEM (Field Emission Scanning Electron Microscope) and XPS (X-ray Photoelectron Spectroscopy). From these experimental results, we found that the organic additives play an important role in formation of Cu film with lower resistivity by EPD.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.527-531
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• 2005

Fully coherent self-assembled InAs quantum dots(QDs) grown on Si (100) substrates by atmospheric pressure metalorganic chemical vapor deposition(APMOCVD) were grown and the effect of growth conditions such as growth rate and growth time on quantum dots' morphology such as densities and sizes was investigated. InAs QDs of 30 - 80 nm in diameters with densities in the range of (0.6 - 1.7) x $10^{10}\;cm^{-2}$ were achieved on Si substrates and InAs layer was changed from 2 dimensional growth to 3 dimensional one at a nominal thickness less than 0.48 ML. This is attributed to the higher ambient pressure of APMOCVD suppressing of In segregation from the 2 dimensional InAs layer. This In segregation looked to disturb the dot formation especially when the growth rate was low so that the dots became less dense and bigger as the growth rate was lower.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.16-23
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• 1999

Deposition of parylene (PA) films has been explored at substrate temperatures below 2$0^{\circ}C$ and pressures below 4 torr. The film thickness was measured using AFM and the film thickness measured was 3,500-12,000$\AA$ and the growth rate was 20-70$\AA$/min. T도 dielectric constant of the deposited PA films was found to be 2.66 and the dielectric strength was in excess of 2$\times$105V/cm. The growth rate became a maximum at a precursor decomposition temperature of $600^{\circ}C$. It was found that the growth rate decreased with increasing substrate temperature, whereas it increased with increasing pressure. At a precursor decomposition temperature of 75$0^{\circ}C$ or at a deposition pressure above 1 Torr the film surface became rough due to particle formation in the gas phase. The condensation of a p-xylylene monomer on the substrate surface turned out to be a rate-limiting step in the growth of the PA films.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.282-282
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• 2010

We report a new method of fabrication of polydiacetylene nanowire using liquid bridge-mediated nanotransfer molding (LB-nTM), a direct patterning method for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas with various materials from a molder to a substrate via a liquid bridge between them. First, we fabricate assembled diacetylene monomer nanowire on the substrate then make it polymerize using 254nm UV-light irradiation. The Polydiacetylene nanowires have been investigated by UV-visible absorption spectroscopy, atomic force microscopy (AFM), and scanning electron microscopy (SEM).

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.72-74
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• 2003

We fabricated textured Ag substrates for coated conductor and evaluated the effects of annealing temperature on microstructural evolution, texture formation, and surface morphology. A strong {110}〈110〉 textured Ag substrate was obtained by cold rolling and annealing at 80$0^{\circ}C$: the full-width at half-maximum(FWHM) value of {110}〈110〉 poles was as sharp as 10$^{\circ}$. Surface morphology was evaluated by using Atomic force microscopy(AFM). Root-mean-square(RMS) roughness of the substrate annealed at 80$0^{\circ}C$ was 39.2 nm. The substrate of strong texture and smooth surface, fabricated in our study, is considered to be suitable for use as a substrate for deposition of superconductor films.

• Bulletin of the Korean Chemical Society
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• v.30 no.2
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• pp.343-347
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• 2009

In this study, the surface of inorganic fine powders is hybridized with nanovesicles containing tocopheryl acetate prepared with hydrogenated lecithin via a coating process. From AFM and SEM analyses it is found that the surface of the nanovesicle-coated fine powders lost their traditional topology and improved in terms of their roughness, skewness, and kurtosis. In addition, TEM observations revealed the formation of a 5 nm thick coating layer on the surface of the fine powders. These hybridized powders, in which bioactive materials such as tocopheryl acetate can be embedded, can be employed as a part of a drug delivery system due to their special ability to control release rate and temperature selectivity. Physical properties of the powders, i.e., the different angle and friction coefficient, were excellent.

• Bulletin of the Korean Chemical Society
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• v.28 no.2
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• pp.188-192
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• 2007

In this work, the effects of chemical treatment of polyimide films were studied by FT-IR, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and contact angles. The adhesion characteristics of the films were also investigated in the peel strengths of polyimide/aluminum films. The increases of surface functional groups of KOH-treated polyimide films were greatly correlated with the polar component of surface free energy. The peel strength of polyimides to metal substrate was also greatly enhanced by increasing the KOH treatment time, which can be attributed to the formation of polar functional groups on the polyimide surfaces, resulting in enhancement of the work of adhesion between polymer film and metal plate.

• Advanced Composite Materials
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• v.17 no.2
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• pp.101-110
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• 2008

Metal nanohoneycomb structures were fabricated by E-beam evaporation and a two-step anodization process in phosphoric acid. Their tribological properties of adhesion and friction were investigated by AFM in relation to the pore size of the nanohoneycomb structures. Variations of the adhesive force are not found with pore size, but formation of the pore greatly reduces the adhesive force compared to the absence of pore structure. The coefficient of friction increased nonlinearly with pore size, due to surface undulation around the pore. Tribological properties do not differ greatly between the original nanohoneycomb structure and the metal nanohoneycomb structure.

• Macromolecular Research
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• v.11 no.5
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• pp.387-392
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• 2003

The ablation effects of Ar-plasma treatment and alkali-decomposition behavior in NaOH solution of polyethylene terephthalate (PET) film were investigated. The modifications were evaluated by analysis of atomic force microscopy topographical changes, and by the measurement of decomposition yield in conjunction with heats of formation and electron densities of acyl carbon calculated by Parameterization Method 3 method. It has shown that the alkali-decomposition is hampered by plasma treatment and its decomposition yield is closely related with plasma treatment conditions such as exposure time to plasma. Plasma-treated PET films exhibited lower decomposition yield, compared to that of virgin PET. Increasing plasma exposure time contributes positively to decrease the decomposition yield. It has also shown that the topography of PET surface was affected by the base-promoted hydrolysis as well as Ar-plasma treatments. These behaviors are attributed to the decreased nucleophilicity of acyl carbon damaged by the ablation of Ar-plasma.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.327-333
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• 2002

In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.