• Textile Coloration and Finishing
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• 제16권5호
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• pp.35-41
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• 2004

Poly(ethylene terephthalate), polyimide(Kapton), and polypropylene surfaces were modified with argon low temperature plasma by RF glow discharge at 240m Torr, 40W to investigate the surface morphological changes due to the plasma treatment using atomic force microscopy(AFM). Analysis of the AFM images and Ra(average roughness) revealed that the plasma treatment resulted in significant ablation on the surfaces. The morphological changes and surface roughness, however, were different depending on material characteristics such as heat stability, presence of amorphous region, swelling phenomenon, and molecular structure of repeating unit. It was assumed that polypropylene due to its tertiary hydrogen was ablated easily compared to poly(ethylene terephthalate), and that polyimide was more resistant to the ablation than PET due to rigid skeleton of imide and stable phenyl ring structure.

• Journal of Sensor Science and Technology
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• 제15권4호
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• pp.237-244
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• 2006

Atomic force microscope (AFM) has become a common tool for the structural and physical studies of biological macromolecules, mainly because it provides the ability to perform experiments with samples in a buffer solution. In this study, structure of proteins and nucleic acids has been studied in their physiological environment that allows native intermolecular complexes to be formed. Cr and Au were deposited on p-Si (100) substrate by thermal evaporation method in sequence with the thickness of $200{\AA}$ and $500{\AA}$, respectively, since Au is adequate for immobilizing biomolecules by forming a self-assembled monolayer (SAM) with semiconductor-based biosensors. The SAM, streptavidin and biotin interacted each other with their specific binding energy and their adsorption was analyzed using the Bio-AFM both in a solution and under air environment. A silicon nitride tip was used as a contact tip of Bio-AFM measurement in a solution and an antimony doped silicon tip as a tapping tip under air environment. Actual morphology could also be obtained by 3-dimensional AFM images. The length and agglomerate size of biomolecules was measured in stages. Furthermore, $R_{a}$ (average of surface roughness) and $R_{ms}$ (mean square of surface roughness) and surface density for the adsorbed surface were also calculated from the AFM image.

• Korean Journal of Materials Research
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• 제14권7호
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• pp.505-510
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• 2004

The glass-ceramic based on LAS($Li_{2}O-Al_{2}O_3-SiO_{2}$) system was observed using SEM(Scanning Electric Microscopy) and AFM(Atomic Force Microscopy) and it was expected to get a correlation between the crystal size and the surface roughness through the result. At heat treatment conditions (the nucleation: $740\~800^{\circ}C$, the crystal growth: $900\~1150^{\circ}C$), the crystal size was increased from 72 to 450 nm so that the mean of surface roughness was also risen from 0.8 to 6.3 nm. Based on the results, the surface roughness of glass-ceramic is controlled by the factors, crystal size, crystallines, and the condition of heat treatment.

• Journal of the Microelectronics and Packaging Society
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• 제7권1호
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• pp.35-40
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• 2000

Teflon-like fluorocarbon thin film was deposited on various substrates by vapor deposition using PFDA (perfluorodecanoic acid). The fluorocarbon films were characterized by static/dynamic contact angle analysis, VASE (Variable-angle Spectroscopic Ellipsometry) and AFM/LFM (Atomic/Lateral Force Microscopy). Based on Lewis Acid/Base theory, the surface energy ($S_{E}$) of the films was calculated by the static contact angle measurement. The work of adhesion (WA) between de-ionized water and substrates was calculated by using the static contact data. The fluorocarbon films showed very similar values of the surface energy and work of adhesion to Teflon. All films showed larger hysteresis than that of Teflon. The roughness and relative friction force of films were measured by AFM and LFM. Even though the small reduction of surface roughness was found on film on $SiO_2$surface, the large reduction of relative friction farce was observed on all films. Especially the relative friction force on TEOS was decreased a quarter after film deposition. LFM images showed the formation of "strand-like"spheres on films that might be the reason far the large contact angle hysteresis.

• Journal of the Korean Society for Precision Engineering
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• 제18권10호
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• pp.61-68
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• 2001

Turbine blade in nuclear plant is subject to cyclic bending fatigue by high steam pressure. Especially, fatigue fracture is caused by low stress below yielding stress. Photograph by SEM doesn't have striation but photograph by AFM has striation on the fatigue fractured surface of 12% Cr steel used in turbine blade. Surface roughness $R_q$ has the linear relation with respect to stress intensity factor range ΔK and is increased linearly according to load amplitude $\textit{\Delta}P$. In this study loading condition applied to turbine blade is predicted by the relation between the gradient of $R_q$ to $\textit{\Delta}K$ and load amplitude $\textit{\Delta}P$.

• Korean Journal of Materials Research
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• 제10권8호
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• pp.525-531
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• 2000

Sb-doped tin oxide films were deposited on Cornig glass 1737 substrate by plasma enhanced chemical vapor deposition (PECVD) technique. The films deposited at different reaction parameters were then examined by using XRD and AFM. The relatively good crystalline thin film was formed at $450^{\circ}C$, input gas ratio R[$P_{SbCl}P_{{SnCl}_4}$]=1.12 and r.f. power 30W. The surface roughness of the film formed by PECVD compared to TCVD was more smooth. Higher concentration of Sb dopant, lower deposition temperature, and thinner thickness of deposited film led to de-creasing surface roughness of the formed thin films.

• The korean journal of orthodontics
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• 제40권3호
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• pp.156-166
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• 2010

Objective: The surface roughness of orthodontic materials is an essential factor that determines the coefficient of friction and the effectiveness of tooth movement. The aim of this study is to evaluate the surface roughness change of the brackets and wires after experimental sliding quantitatively. Methods: Before and after experimental sliding tests, the surface roughness of stainless steel brackets, ceramic brackets, stainless steel wires, and beta-titanium (TMA) wires were investigated and compared using atomic force microscopy (AFM). Results: After sliding tests, changes in the surface of the wire were greater than changes in the bracket slot surface. The surface roughness of the stainless steel bracket was not significantly increased after sliding test, whereas the roughness of ceramic brackets was decreased. Both the surface roughness of stainless steel and TMA wires were increased after sliding test. More changes were observed on the ceramic bracket than the stainless steel bracket. Conclusions: AFM is a valuable research tool when analyzing the surface roughness of the brackets and wires quantitatively.

• Journal of the Korea Academia-Industrial cooperation Society
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• 제6권3호
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• pp.261-264
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• 2005

The 90 nm gate pattern technology have been virtualized by employing the hard mask and the planarization of fate poly silicon. We fabricated 70nm poly-Si on $200 nm-SiO_2/p-Si(100)$ substrates using low pressure chemical vapor deposition (LPCVD) to investigate roughness evolution by varying rapid annealing temperatures. The samples were annealed at the temperatures of $700^{\circ}C\~1100^{\circ}C$ for 40 seconds with a rapid thermal annealer. The surface image and the surface roughness were measured by a field emission scanning electron microscopy (FESEM) and an atomic force microscopy (AFM), respectively. The poly silicon surface became more rough as temperature increased due to surface agglomeration. The optimum conditions of poly silicon planarization were achieved by annealed at $700^{\circ}C$ for 40 seconds.

• Journal of the Korean Vacuum Society
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• 제12권2호
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• pp.123-129
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• 2003

Thin transparent Cu films in the thickness range of 10 ~ 40 nm are deposited by rf-magnetron sputtering on porous silicon (PS) anodized on p-type silicon in dark. Microstructural features of the Cu films are investigated using SEM, AFM and XRD techniques. The RMS roughness of the Cu films is found to be around 1.47 nm and the grain growth is columnar with a (111) preferred orientation and follows the Volmer-Weber mode. The photoluminescence studies showed that a broad luminiscence peak of PS near the blue-green region gets blue shifted (~0.05 eV) with a small reduction in intensity and therefore, Cu-related PL quenching is absent. The FTIR absorption spectra on the PS/Cu structure revealed no major change of the native PS peaks but only a reduction in the relative intensity. The I-V characteristic curves further establish the Schottky nature of the diode with an ideality factor of 2.77 and a barrier height of 0.678 eV. An electroluminiscence (EL) signal of small intensity could be detected for the above diode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.279-282
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• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.