• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.6
• /
• pp.63-70
• /
• 1989

The ion beam extracted from the AuGe liquid metal ion source was implanted into GaAs substrate. The surface composition and the structure of ion implanted samples were investigated by AES, RHEED, SEM and EPMA. The depth profiles measured by AES were compared with the results of Monte Carlo simulation based on the two-body collision. As the results of AuGe ion implantation the preferential sputtering of As were revealed by AES and EPMA, and the outdiffusion of Ga and Ge was investigated by 300$^{circ}C$ annealing. The Au and Ge depth profiles measured by AES agreed with the results of Monte Carlo simulation based on the two-body collision.

• Korean Journal of Materials Research
• /
• v.4 no.6
• /
• pp.638-643
• /
• 1994

The Si(ll1) surface structures induced by deposition of Au atoms were investigated by RHEED system. When Au atoms were deposited on the Si(ll1) $7\times7$ surfade, the dependence of structures and phases on the substrate temperatures and coverages was drastic. For O.1ML to 0.4ML of coverage the $7\times7$ structure changes to $7\times7$ + $5\times2$ structure as temperature increases to $350^{\circ}C$-$750^{\circ}C$. Between 0.4M1 to 1.OML the phase changed to $5 \times 2,\alpha- \sqrt{3} \times \sqrt{3},\beta- \sqrt{3} \times \sqrt{3}$ structure according to the substrate temperature and coverages. When the coverages exceeds O.SML, the 6 x 6 structure appears at the substrate temperature range between $270^{\circ}C$-$370^{\circ}C$ and compeletely transforms to 6 x6 at 1,OML. The isothermal desorption of Au on Si(ll1) surface investigated by using AES in the $\alpha- \sqrt{3} \times \sqrt{3},5 \times 2$ structures shows that the desorption energys of $\alpha- \sqrt{3} \times \sqrt{3}$ and 5 x 2 were 79Kcal/mol and 82 Kcal/mol respectively.

• Journal of Magnetics
• /
• v.7 no.3
• /
• pp.106-114
• /
• 2002

To reduce the grain size and the media noise in a typical CrMo/CoCrPtB longitudinal media, a sputtering process which includes the exposure of oxygen onto the surface of CrW$_x$ (x=0, 25, 50, 75, 100 at.%) and CrTi$_{15}$ seedlayers with the thickness of 0.5 nm have been utilized. The main results are: (1) the media grain size and the media noise are reduced when using CrW$_x$ (x=0, 25, 50 at.%) seedlayers, and not reduced when using CrTils or CrW$_x$ (x=75, 100 at.%) seedlayers, (2) AES and RHEED results suggest that W seedlayer, which has the highest melting point, forms layer-like film with very small and dense island grain, due to its high free surface energy and low mobility. On the other hand, CrW$_{50}$ and Cr seedlayers, which have lower melting point than W seedlayer, form island film, (3) to effectively reduce the media grain size and improve the media signal to noise ratio, it is essential to utilize a very thin Cr-based seedlayer with high affinity for oxygen and which forms island-like structure, such as CrW$_{50}$ seedlayer.

• Journal of the Korean Vacuum Society
• /
• v.2 no.2
• /
• pp.199-208
• /
• 1993

The effect of nucleation free energy related to Si surface states on diamond film growth behavior has been studied. Ar first, the three kinds of diamond thin films (A, B, C) were deposited on various Si substrates (A-Si, B-Si, C-Si) whose surfaces were polished with 1 ${\mu}m$ diamond paste, 6 ${\mu}m$ Al_2O_3$ powder and 12 ${\mu}m$ Al_2O_3$ powder respectively. And then, relative nucleation free energy calculated is ${\Delta}G_{A-Si}<{\Delta}G_{B-Si}<{\Delta}G_{C-Si}$. Although there are some difference in grain size, shape and nucleated size, the thin films on A-Si and B-Si were diamond including a small amount of DLC which was confirmed by AES, SEM, XRD, and RHEED. Namely, the diamonds of films (B) were not nucleated in scratches but in dents and larger in grain size compare with the film (C) of which diamond sere nucleated not only scratches but also dents. And, the sphere diamond which is not general shape was grown on C-Si. After all, the sphere was turned out to be the diamond including much graphite as a result of the AES in situ depth profiling. Consequently, the diamond shape and quality grown on Si were Changed from the crystal which the (100) and (110) planes were predominent to the crystal in which (111) plane was predominent, and newt to sphere shape diamond including much graphite according as the nucleation free energy increases.

• Journal of the Korean Society of Industry Convergence
• /
• v.6 no.3
• /
• pp.201-205
• /
• 2003

The effects of adsorption and desorption of alkali-metals on Si(111) surface were investigated by using AES and RHEED-system. The adsorption system is a fundamental interest because of its unique electronic properties such as measurement of work function change, adatom-core level shift. It was found that the growth node of K on Si(111) surface was layer by layer growth and the saturation coverage was 2.0ML at room temperature. Superstructure changes on Si(111) surface according to the alkali-metal thickness and substrate temperatures were accurately defined. By applying the isothermal desorption method, the desorption energies of Li/Si(111) and K/Si(111) surfaces was measured. On Li/Si(111) and K/Si(111) surfaces, the desorption energies were 3.07 eV, 2.19 eV respectively.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.23 no.3
• /
• pp.376-383
• /
• 1986

In this paper, we show that the growth rate of MBE GaAs epitaxial layer is controlled entirely by the flux density of the Ga beam, impinging on the substrate surface, and is linearly proportional to the Ga effusion cell temperature and the growth time. According to our investigation of the epitaxial layer surfvace through RHEED, AES, SIMS and SEM, if the growth temperature is maintained above 590\ulcorner, the surface crystal structure, flathness and stoichiometry become significantly enhanced, and the epilayer surface has a smooth mirror-like appearance.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.9
• /
• pp.1381-1387
• /
• 1989

For the fabrication of ohmic contact to p-type GaAs, In Liquid Metal Ions were implanted into p-type GaAs (Zn:1.5x10**19/cm**3). After the samples were processed by Infrared rapid thermal annealing (IRTA0 or Furance Annealing (FA), I-V and specific contact contact resistivity were measured. Specific contact resistivity was found to be 1.7x10**-5 \ulcorner-cm\ulcornerin IRTA 750\ulcorner, 10 sec annealed sample. The surface characteristics of the samples were investigated with SEM, RHEED, AES. From these results we can know that implanted In ions were formed mixing layer of InAs at the surface.

• The Korean Journal of Ceramics
• /
• v.3 no.3
• /
• pp.177-181
• /
• 1997

Epitaxial films of cubic silicon carbide (3C-SiC, $\beta$-SiC) have been grown on Si(001) and Si(111) substrates by high vacuum chemical vapor deposition using the single precursor 1,3-disilabutane, $H_3SiCH_2SiH_2CH_3$, at temperatures 900~$100^{\circ}C$. The advantage of using the single precursor over the covnentional chemical vapor deposition is evident in that the source chemical is safe to handle, carbonization of the substrates is not necessary, accurate stoichiometry of the silicon carbide films is easily achieved, and the deposition temperature is much lowered. The films were characterized by XPS, XRD, SEM, RHEED, RBS, AES, and TED.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.22 no.6
• /
• pp.34-40
• /
• 1985

Characteristics of GaAE epilayers grown on (100) CaAs wa(tors by molecular beam epitaxy (MBE) under various single crystal growing conditions were investigated. In fabrica-ting GaAs, epilayer by MBE, the most important factors are a substrate temperature(ts) and a flux density ratio (As/Ga). In this experiment, the substrate temperature was varied in the range of 48$0^{\circ}C$ to $650^{\circ}C$ and As and Ga cell temperatures were varied in the range of 218$^{\circ}C$ to 256$^{\circ}C$ and 876$^{\circ}C$ to 98$0^{\circ}C$, respectively. At the substrate temperature of 54$0^{\circ}C$, As cell temperature of 23$0^{\circ}C$, and Ga cell temperature of 91$0^{\circ}C$, the As/Ga ratio was 5"10, the surface morphology was most smooth . Investigation of As-stabilized surface by RHEED and of depth profile by SIM5 showed that As is less stable than Ga. Also, X-ray diffraction measurement revealed that single crystals of (400) and (200) were formed at the both sub-strate temperatures of 52$0^{\circ}C$ and 54$0^{\circ}C$.TEX>.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.23 no.2
• /
• pp.243-248
• /
• 1986

The impurities in As and Ga sources and the contamination of the GaAs substrate prior to growing of MBE GaAs epitaxial layer have been investigated using RHEED, AES and RGA methods. The as source was contaminated by H2O, CO, CO2 and AsO, and the Ga source was contaminated by H2, H2O, CO and CO2. These contaminants could easily be removed by prebaking the source. On the other hand, GaAs substrate was contaminated principally carbon and oxygen. The oxygen could easily be removed by heating the substrate above 480\ulcorner, and the carbon could also be reduced by sputtering the substrate with 1ke V Ar+. The chemically etched substrate surface prior to growing the layer was rough, but it was made to be smooth and clean by heating it above 530 \ulcorner.