• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.199-199
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• 2016

Commercially pure titanium (cp-Ti) and Ti alloys (typically Ti-6Al-4V) display excellent corrosion resistance and biocompatibility. Although the chemical composition and topography are considered important, the mechanical properties of the material and the loading conditions in the host have, conventionally. Ti and its alloys are not bioactive. Therefore, they do not chemically bond to the bone, whereas they physically bond with bone tissue. The electrochemical deposition process provides an effective surface for biocompatibility because large surface area can be served to cell proliferation. Electrochemical deposition method is an attractive technique for the deposition of hydroxyapatite (HAp). However, the adhesions of these coatings to the Ti surface needs to be improved for clinical used. Plasma electrolyte oxidation (PEO) enables control in the chemical com position, porous structure, and thickness of the $TiO_2$ layer on Ti surface. In addition, previous studies h ave concluded that the presence of $Ca^{+2}$ and ${PO_4}^{3-}$ ion coating on porous $TiO_2$ surface induced adhesion strength between HAp and Ti surface during electrochemical deposition. Silicon (Si) in particular has been found to be essential for normal bone and cartilage growth and development. Zinc (Zn) plays very important roles in bone formation and immune system regulation, and is also the most abundant trace element in bone. The objective of this work was to study electrochemical characteristcs of Zn and Si coating on Ti-6Al-4V by PEO treatment. The coating process involves two steps: 1) formation of porous $TiO_2$ on Ti-6Al-4V at high potential. A pulsed DC power supply was employed. 2) Electrochemical tests were carried out using potentiodynamic and AC impedance methoeds. The morphology, the chemical composition, and the micro-structure an alysis of the sample were examined using FE-SEM, EDS, and XRD. The enhancements of the HAp forming ability arise from $Si/Zn-TiO_2$ surface, which has formed the reduction of the Si/Zn ions. The promising results successfully demonstrate the immense potential of $Si/Zn-TiO_2$ coatings in dental and biomaterials applications.

• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.269-275
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• 2005

We analyzed the unit cell performance against the cathode porosity, which is supposed to be closely related with active sites for the cathode reaction. In order to fabricate the unit cells with different porosity in the cathode layer we changed the mixing ratio of fine and coarse LSCF cathode powders. The final porosity of each cathode layer was 14, 23, 27, $39\%$ respectively. According to the electrochemical analysis of unit cell performance via DC current interruption and AC impedance method, the electrodic polarization resistance was diminished as the cathode porosity increased. The decrease of polarization resistance was attributed due to the increase of active reaction sites and the enhancement of overall unit cell performance could be explained in the same line.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.6
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• pp.2722-2728
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• 2011

3Phase PWM rectifier has become increasingly popular due to its capability of nearly sinusoidal waveform of the input current, and nearly unity power factor operation as a AC/DC rectifier of high capacity telecommunication power supply system. Generally, PI controller is used as a voltage controller of PWM rectifier and voltage controller must be designed to have low overshoot in transient state to get a reliability and stable operation. However, in the application of telecommunication in which load condition is varied very fast, the voltage controller must have a large bandwidth to reduce output voltage variation. The PI controller with large bandwidth arouse the excessive overshoot of the output voltage, and this large output voltage variation degrades the reliability of communication power of the three-phase PWM Rectifier. In this paper, new IP voltage controller for 3 phase PWM rectifier is proposed which has relatively low transient output voltage variation. The improved output characteristics of the transient state voltage responses of the starting and at load changes of the proposed voltage controller are proved by simulations and experiments.

• Journal of the Korean Chemical Society
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• v.18 no.3
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• pp.202-209
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• 1974

Polarographic behaviors of copper and cadmium complexes with 2,2'-bipyridine and ethylenediamine in acetonitrile have been investigated by the DC and AC polarography. The reduction processes are estimated as follows; $Cu(II)-bipy. \;complex\;{\longrightarrow^{e^-}_{E_{1/2}\risingdotseq+0.1V}}\;Cu(I)-bipy.\;complex\;{\longrightarrow^{e^-}_{E_{1/2}=-0.43V}}\;Cu(Hg)$$Cu(II)-en.\;complex\;{\longrightarrow^{e^-}}\;Cu(I)-en.\;complex\;{times}\;{\longrightarrow^{e^-}_{E_{1/2}=-0.56V}}\;Cu(Hg)$$Cu(II)-bipy. \;complex\;{\longrightarrow^{e^-}_{E_{1/2}=-0.57V}}\;Cu(I)-bipy.\;complex\;{\longrightarrow^{2e^-}_{E_{1/2}=-0.97V}}\;Cd(I)-bipy\;complex$$Cu(II)-en.\;complex\;{\longrightarrow^{e^-}_{E_{1/2}=+0.05V}\;Cu(I)-en.\;complex{\longrightarrow^{e^-}_{E_{1/2}=-0.92V}}\;Cu(Hg)$ The limiting currents of all steps are controlled by diffusion. The number of ligand and the dissociation constant for Cu(Ⅰ)-bipy. complex were found to be n = 2 and $K_d=(1.5{\pm}0.1){\times}10^{-7}$, respectively.

• International Journal of Highway Engineering
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• v.7 no.4 s.26
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• pp.91-102
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• 2005

This study dealt with correlation analysis of binder stiffness with deformation strength and dynamic creep property of asphalt mixtures for evaluation of applicability of deformation strength $(S_D)$. Two aggregates, with maximum size of 13mm and eight binders were used to produce 16 different mixtures. The stiffness of binder $(G^*/sin\delta)$ was measured using DSR at $64^{\circ}C$. Final deformation(FD) and dynamic stability(DS) were measured by dynamic creep (DC) test, and SD was measured by Kim test for each mixture. Results of correlation analysis between $G^*/sin\delta$, and $S_D$, m and DS showed that correlation with binder stiffness and deformation strength was the highest $(R^2>0.88)$. There was good correlation between DS, FD with $S_D$. The results indicated that rut-resistance property of mixture is better reflected in $S_D$ test than FD or DS of dynamic creep test. Therefore, it is concluded that $S_D$ can be possibly used for evaluation of rut resistance of asphalt concretes with a good reliability if the procedure is standardized.

• Fire Science and Engineering
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• v.30 no.4
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• pp.121-127
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• 2016

This study analyzed the structural and electrical characteristics of an iron fittings type Corrugated Stainless Steel Tubing (CSST) damaged by the Primary Current Injection Test System (PCITS). CSST consists of cladding, tube, nuts, clamp ring, flare cap, socket, and ball valve. For an evaluation of the dielectric withstand voltage, the area between the live part and non-live part of the CCST shall withstand a voltage of 220 V AC for one minute. For an evaluation of the insulation performance by 500 V DC, it is required that the insulation exceed more than $1M{\Omega}$ before the temperature rise test, $0.3M{\Omega}$ after the test. Although the average resistance of the product was $11.5m{\Omega}$, that of the product damaged at a current of 130 A by the PCITS was $11.50m{\Omega}$. Furthermore, parts of the cladding were melted and black smoke appeared when a current of 130 A applied for 10 s. After 60 s, most parts were heated and turned red. At 120 s, the parts that turned red had widened. Although it did not form a normal distribution because the P value was 0.019 with a confidential interval of 95%, it revealed outstanding characteristics with an AD (Anderson-Darling) value of 0.896 and a standard deviation of 0.5573.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.360-369
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• 2008

The solar cells should be operated at the maximum power point because its output characteristics were greatly fluctuated on the variation of insolation, temperature and load. It is necessary to install an inverter among electric power converts by means of the output power of solar cell is DC. The inverter is operated supply a sinusoidal current and voltage to the load and the interactive utility line. In this paper, the proposes a photovoltaic system is designed with a step up chopper and single phase PWM voltage source inverter. Synchronous signal and control signal was processed by one-chip microprocessor for stable modulation. The step up chopper is operated in continuous mode by adjusting the duty ratio so that the photovoltaic system tracks the maximum power point of solar cell without any influence on the variation of insolation and temperature for solar cell has typical dropping character. The single phase PWM voltage source inverter is consists of complex type of electric power converter to compensate for the defect, that is, solar cell cannot be develop continuously by connecting with the source of electric power for ordinary using. It can be cause the efect of saving electric power, from 10 to 20%. The single phase PWM voltage source inverter operates in situation, that its output voltage is in same phase with the utility voltage. The inverter are supplies an ac power with high factor and low level of harmonics to the load and the utility power system.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.7
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• pp.6-13
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• 2006

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices, were prepared by using the capacitively coupled DC magnetron sputtering method. ITO and ZnO:Al films with the optimum growth conditions showed each resistivity of $1.67{\times}10^{-3}[{\Omega}-cm],\;2.2{\times}10^{-3}[{\Omega}-cm]$ and transmittance of 89.61[%], 90.88[%] in the wavelength range of the visible spectrum. The two types of 5 inch-PDP cells with ZnO:Al and ITO transparent electrodes were made under the same manufacturing conditions. The PDP cell with ZnO:Al film was optimally operated in the mixing gas rate of Ne(base)-Xe(8[%]), and at gas pressure of 400[Torr]. It also shows the average measured brightness of $836[cd/m^2]$ at voltage range of $200{\sim}300$[V]. Luminous efficiency, one of the key parameter for high brightness and low power consumption, ranges from 1.2 to 1.6[lm/W] with increasing frequency of ac power supplier from 10 to 50[Khz]. The brightness and luminous efficiency are lower than those with ITO electrode by about 10[%]. However, these values are considered to be enough for the normal operation of PDP TV.

• Journal of the Korean Magnetics Society
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• v.20 no.1
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• pp.13-17
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• 2010

Fe-3, 4.2 and 6.8% Si compressed cores were fabricated, and then electrical resistivity, AC and DC magnetic properties, microhardness, and other properties were analyzed in order to know whether best soft magnetic properties could be also obtained in an Fe-Si compressed core with the well-known composition of Fe-6.5% Si. With increasing the silicon content, eddy current loss and hysteresis loss decreased and increased, respectively, so that a minimum total loss was not obtained in the well-known Fe-6.8 % Si cores, but obtained in the Fe-4.2 % Si cores. Also electrical resistivity of the cores and hardness of the particles increased monotonously with silicon content so that compaction ratio of the cores decreased. B2 and $DO_3$ ordered phase could be observed only in Fe-6.8% Si powder. A minimum loss and highest permeability of the Fe-4.2 % Si cores can be explained by the ratio of specific electrical resistivity of insulator to that of magnetic particles, micro-hardness, compaction ratio and demagnetization coefficient of the Fe-Si powder particles with silicon content.

• Ceramist
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• v.21 no.4
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• pp.378-387
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• 2018

The optimal fabrication conditions for $Gd_{0.1}Ce_{0.9}O_{2-{\delta}}$(GDC) buffer layer and $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-{\delta}}$ (LSCF) cathode on 1mol% $CeO_2-10mol%\;Sc_2O_3$ stabilized $ZrO_2$ (CeScSZ) electrolyte were investigated for application of IT-SOFCs. GDC buffer layer was used in order to prevent undesired chemical reactions between LSCF and CeScSZ. These experiments were carried out with $5{\times}5cm^2$ anode supported unit cells to investigate the tendencies of electrochemical performance, Microstructure development and interface reaction between LSCF/GDC/CeScSZ along with the variations of GDC buffer layer thickness, sintering temperatures of GDC and LSCF were checked, respectively. Electrochemical performance was analyzed by DC current-voltage measurement and AC impedance spectroscopy. Microstructure and interface reaction were investigated by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). Although the interfacial reaction between these materials could not be perfectly inhibited, We found that the cell, in which $6{\mu}m$ GDC interlayer sintered at $1200^{\circ}C$ and LSCF sintered at $1000^{\circ}C$ were applied, showed good interfacial adhesions and effective suppression of Sr, thereby resulting in fairly good performance with power density of $0.71W/cm^2$ at $800^{\circ}C$ and 0.7V.