• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.157-157
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• 2009

$BaTiO_3$를 기본조성으로 하는 PTC 써미스터는 Curie 온도이상에서 저항이 급격히 상승하는 반도성 전자세라믹스로서 degaussing 소자, 정온 발열체, 온도센서, 전류 제한 소자 등 상업적으로 폭넓게 사용되고 있다. 본 소자는 소결온도, 소결 및 열처리 분위기, 불순물, 첨가제 등의 제조공정상의 인자들과 기공률, 결정립 크기 등이 복합적으로 작용하여 PTCR 특성이 크게 영향을 받기 때문에 제조하기에 무척 까다로운 소자로 알려져 있다. 특히 과전류 보호 소자용으로 사용하기 위해서는 상온 비저항을 크게 낮추어야 하며 이에 대한 연구가 계속 진행되고 있다. 따라서 본 연구에서는 SiO2을 0.5~10 at%로 달리한 조성으로 환원 분위기에서 소결하고 공기 중에서 재산화 처리하여 재료의 PTC 특성에 어떠한 영향을 미치는지 분석하였다. 소정의 조성을 선택하여 $1180^{\circ}C{\sim}1240^{\circ}C$에서 2시간 동안 환원분위기에서 소결하고, $800^{\circ}C$에서 1 시간 공기 중에서 재산화 처리한 후 R-T 특성을 측정하여 SiO2 함량에 따른 PTC 특성을 분석하였다. 그 결과 SiO2의 함량이 증가할수록 상온 저항은 낮아지다가 3.0 at% 이상으로 첨가할 경우 급격히 상승하는 경향을 나타내었다. 특히 SiO2를 1.0~3.0 at% 일 때 우수한 PTC 특성을 가졌다. $1180^{\circ}C$에서는 소결 밀도가 낮아 상온 비저항이 크게 높았지만, $1200^{\circ}C{\sim}1220^{\circ}C$에서는 정상 입성장이 나타나면서 일반적인 PTC 특성을 가졌지만, $1240^{\circ}C$ 이상에서는 공정 액상이 형성되어 비정상 입성장이 일어나 상온 비저항이 크게 낮아졌다. 한편 점핑비-log(Rmax/Rmin)는 SiO2 함량이 증가할수록 높아지다가 3.0 at% 이상에서는 낮아짐을 확인하였다.

• 한국세라믹학회지
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• 제56권5호
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• pp.474-482
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• 2019

Chromium-doped zinc ferrite nanoparticles with the general formula Cr_yZnFe_2-yO₄ (y = 0, 0.025, 0.05, 0.075, and 0.1) were synthesized by a surfactant-assisted chemical co-precipitation route using metal nitrate salt precursors. The phase purity and structural parameters were determined by powder X-ray diffraction. The concentration of Cr³⁺ doped into ZnFe₂O₄ (ZF) noticeably affected the crystallite size, which was in the range of 22 nm to 36 nm, and all samples showed a single cubic spinel structure without any secondary phase or impurities. The lattice parameter, X-ray density, and skeletal density increased with an increase in the Cr-doping concentration; on the other hand, a decreasing trend was observed for the particle size and porosity. The influence of Cr³⁺ substitution on ZF magnetic properties were studied under an applied field of 15 kOe. The overall results revealed that the incorporation of a small amount of Cr dopant changed the structural, electrical, and magnetic properties of ZF.

• Journal of Magnetics
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• 제18권1호
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• pp.34-38
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• 2013

This paper studies the effects of the Mn-site substitution by nickel on the magnetic properties and the magnetocaloric properties of $La_{0.7}Ca_{0.3}Mn_{1-x}Ni_xO_3$ (x = 0, 0.05 and 0.1). The orthorhombic crystal structures of the samples are confirmed by the room temperature X-ray diffraction. The dependence of the Curie temperature ($T_C$) and the magnetic entropy change (${\Delta}S_M$) on the Ni doping content was investigated. The samples with x = 0 had the first order phase transition, while the samples with x = 0.05 and 0.1 had the second order phase transition. As the concentration of Ni increased, the maximum entropy change (${\mid}{\Delta}S_M{\mid}_{max}$) decreased gradually, from 2.78 $J{\cdot}kg^{-1}{\cdot}K^{-1}$ (x = 0) to 1.02 $J{\cdot}kg^{-1}{\cdot}K^{-1}$ (x = 0.1), in a magnetic field change of 15 kOe. The measured value of $T_C$ was 185 K, 150 K and 145 K for x = 0, 0.05 and 0.1, respectively. The phase transition temperatures became wider as x increased. It indicates that the Mn-site substitution by Ni may be used to tailor the Curie temperature in $La_{0.7}Ca_{0.3}Mn_{1-x}Ni_xO_3$.

• Advances in materials Research
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• 제7권1호
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• pp.73-81
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• 2018

$TiO_2/CH_3NH_3Pb_{1-x}Sb_xI_{3-3x}Br_{3x}-based$ photovoltaic devices were fabricated by a spin-coating method using mixture solutions with $SbBr_3$. Effects of $SbBr3$, CsI or RbBr addition to $CH_3NH_3PbI_3$ precursor solutions on the photovoltaic properties where investigated. The short-circuit current densities and photoconversion efficiencies were improved by adding a small amount of $SbBr_3$, CsI or RbBr to the perovskite phase, which would be due to the doping effect of Sb, Br and Cs/Rb atom at the Pb, I and $CH_3NH3$ sites, respectively.

• 한국결정성장학회지
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• 제21권4호
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• pp.175-180
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• 2011

이종 원자가를 가시는 Cu의 도핑이 LSM에 미치는 영향을 구조적인 분석과 열팽창계수를 통해서 고찰하였다. 고상반응을 이용하여 $La_{0.8}Sr_{0.2}Mn_{1-x}Cu_xO_3$($0{\leq}x{\leq}0.3$)음 제조하였으며, Cu의 도핑 함량에 따른 결정구조 및 열팽창계수를 확인하였다. Cu 함량이 증가함에 따라서 격자상수외 열팽창계수가 감소하는 경향을 나타냈지만, x = 0.3인 경우에는 증가 하였다. 이러한 격자상수와 열팽창계수의 변화는 Cu 이온의 B-site에서의 Mn 자리에 치환될 때 $0{\leq}x{\leq}0.2$의 범위에서는 $Cu^{3+}$의 존재로 인한 이온 반성의 감소에 의한 것으로 판단되었고, x=0.3인 경우에는 $Cu^{2+}$와 $Mn^{4+}$의 존재로 인한 산소 공공의 증가에 기인한 것이었다.

• Transactions on Electrical and Electronic Materials
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• 제11권3호
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• pp.126-129
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• 2010

(1-X) $(Na_{0.5}K_{0.5})NbO_3-X$ $K_4CuNb_8O_{23}$ (NKN-X KCN) ceramics were produced using the conventional solid state sintering method, and their sinterability and electric properties were investigated. The density, dielectric constant (${\varepsilon}_r$), piezoelectric constant $d_{33}$, electromechanical coupling factor $k_p$ and mechanical quality factor $Q_m$ value of the NKN ceramics depended upon the KCN content and the sintering temperature. In particular, the KCN addition to the NKN greatly improved the mechanical quality factor $Q_m$ value. The ceramic with X = 2.0 mol% sintered at $1,150^{\circ}C$ possesses the optimum properties (${\varepsilon}_r=241$, $d_{33}=78$, $k_p=0.34$ and $Q_m=1,121$). These results indicate that the ceramic is a promising candidate material for applications in lead free piezoelectric transformer and filter materials.

• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.591-596
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• 2002

In this work, epitaxial GaN is grown on sapphire substrate in AlGaN/GaN heterostructures. Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as a function of the square root of the oxygen partial Pressure. Oxygen is a shallow donor with a thermal ionization energy of $27\pm2 meV$ measured by temperature dependent Hall effects. A compensation ratio of $\theta$=0.3~0.4 was determined from Hall effect measurements. The formation energy of $O_N$ of $E^F$ =1.3eV determined from the experimental data, is lower than the theoretically predicted vague.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.723-727
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• 2011

0.935Ba$TiO_3$-0.065($Bi_{0.5}Na_{0.5}$)$TiO_3+xmol%MnO_2$ (BBNTM-x) ceramics with $0{\leq}x{\leq}0.05$ were fabricated with muffled sintering by a modified synthesis process. Their microstructure and enhanced positive temperature coefficient of resistivity (PTCR) characteristics were systematically investigated in order to obtain lead-free high TC PTCR thermistors. All specimens showed a perovskite structure with a tetragonal symmetry and no secondary phase was observed. Grain growth was achieved when the doped MnO2 was increased above 0.02 mol%. This is due to the effect of positive Mn ion doping as an acceptor compensating a Ba vacancy occurred by the higher donor dopant concentration of $Bi^{3+}$ ion. Especially, enhanced PTCR characteristics of the extremely low ${\rho}_{RT}$ of $9\;{\Omega}{\cdot}cm$, PTCR jump of $5.1{\times}10^3$, ${\alpha}$ of 15.5%/$^{\circ}C$ and high $T_C$ of $167^{\circ}C$ were achieved for the BBNTM-0.04 ceramics.

• 한국전기전자재료학회논문지
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• 제24권3호
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• pp.240-244
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• 2011

The high cost of crystalline silicon solar cells has been considered as one of the major obstacles to their terrestrial applications. Spin on doping (SOD) is presented as a useful process for the manufacturing of low cost solar cells. Phosphorus (P509) was used as an n-type emitters of solar cells. N-type emitters were formed on p-type EFG ribbon Si wafers by using a SOD at different spin speed (1,000~4,000 rpm), diffusion temperatures ($800^{\circ}C{\sim}950^{\circ}C$), and diffusion time (5~30 min) in $N_2+O_2$ atmosphere. With optimum condition, we were able to achieve cell efficiency of 14.1%.