• Title/Summary/Keyword: A.c. impedance

Search Result 711, Processing Time 0.03 seconds

Initial Charge/Discharge of $LiCoO_2$ Composite Cathode with Various Content of Conductive Material for the Lithium ion Battery (리튬이온전지용 $LiCoO_2$정극의 도전재료에 따른 초기 충방전 특성)

  • Doh Chil-Hoon;Moon Seong-In;Yun Mun-Soo;Yun Suong-Kyu;Yum Duk-Hyung;Park Chun-Jun
    • Journal of the Korean Electrochemical Society
    • /
    • v.2 no.3
    • /
    • pp.123-129
    • /
    • 1999
  • Initial electrochemical characteristics of $LiCoO_2$ electrode for lithium ion battery with various content of super s black as conductive material were evaluated through the charge/discharge with the potential range of 4.3V to 2.0V versus $Li^+/Li^+$. The rate of C/4 and C/2 by the 3 electrode test cell composed with an electrolytic solution of 1 mol/l $LiPF_6/EC+DEC(1:3\;by\; weight)$. Lithium was used as reference electrode. High impedance charge behavior was observed at early stage of charge. In the case of $3\%w/w$ of super s black as conductive material, the specific resistance of the high impedance releasing was $3.82\;{\Omega}\;{\cdot}\;g-LiCoCo_2$ at the current density of $0.5 mA/cm^2$, which corresponds 7 times of the specific resistance of electrode $(0.728 g-LiCoO_2)$. At second charge, the specific resistance of the high impedance releasing was 63 mn · g-Lico02, which corresponds 12eio of the specific resistance of electrode and only $1.7\%$ of that of the first charge. The first charge and discharge specific capacities at C/4 rate were 160-161 and $153\~155mAh/g-LiCoO_2$, respectively, to lead $95.4\~96.4\%$ of coulombic efficiencies and ca. $6 mAh/g-LiCoO_2$ of initial irreversible specific capacity. Specific resistance at the end of charge and rest showed low value at content of super s black between 2 and $7\%w/w$, which agreed with characteristics of irreversible specific capacity. Capacity densities were reduced by the increasing the content of conductive material. They were 447 and 431mAh/ml when 2 and $2.9\%w/w$ of super s black were used, respectively, at the rate of C/4.

Dielectric Properties depending on Frequency in ITO/$Alq_3$/Al (ITO/$Alq_3$/Al의 주파수 변화에 따른 유전 특성)

  • Oh, Y.C.;Lee, D.K.;Kim, J.S.;Shin, C.G.;Lee, S.I.;Kim, C.H.;Kim, T.W.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.11a
    • /
    • pp.292-293
    • /
    • 2006
  • We have Investigated dielectric properties depending on bias voltage in organic lightemitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light emitting diodes using impedance characteristics measurement by the auto-balancing bridge technique and equivalent cirrcuit of ITO/$Alq_3$/Al. Impedance characteristics was measured complex impedance Z and phase ${\theta}$ in the frequency range of 40 [Hz] to $10^8$ [Hz]. We obtained complex electrical conductivity, dielectric constant, and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

  • PDF

An Investigation into the Actual Condition of Electrical Equipments Installation for the Inspection Method Development Based on IEC 60364 (IEC 60364기반 건축전기설비 점검기법 개발을 위한 현장실태 조사)

  • Jung, Jin-Soo;Han, Woon-Ki;Lee, Han-Sang
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.23 no.5
    • /
    • pp.36-41
    • /
    • 2009
  • In this paper an Investigation into the actual condition of electrical equipment installation for the inspection method development based on IEC 60364. The analysis objects are the difference between electrical equipments installation in korea & electrical equipments installation based on the IEC 60364. The measurement elements are loop impedance, operating characteristic of circuit breaker and protective conductor continuance. As a result, the korea electrical equipments installation was almost same the TT system but some different of protective conductor continuance. Electrical equipments installed TN-C-S has noting problem about installation but manager dose not understand about IEC 60364.

Fabrication and Electrical Characteristics of SrZr$_{0.95}$M$_{0.05}$O$_3$-$\delta$ and BaZr$_{0.95}$O$_3$-$\delta$(M=Ga, Y) (SrZr$_{0.95}$M$_{0.05}$O$_3$-$\delta$ 및 BaZr$_{0.95}$O$_3$-$\delta$(M=Ga, Y) 의 제조와 전기적 특성)

  • 편영미;유광수
    • Journal of the Korean Ceramic Society
    • /
    • v.36 no.7
    • /
    • pp.679-684
    • /
    • 1999
  • Specimens of SrZr0.95Ga0.05O3-$\delta$, SrZr0.95Y0.05O3-$\delta$, BaZr0.95Ga0.05O3-$\delta$ and BaZr0.95Y0.05O3-$\delta$ were fabricated by a solid-state reaction method and subsequent sintering at 150$0^{\circ}C$ to 1$600^{\circ}C$ The microstructures and electrical characteristics of the specimens were studied. Only BaZr0.95Ga0.05O3-$\delta$ showed dense microstructure and had typical impedance spectra at various temperature. Its electrical conductivity by impedance analysis was 2.7$\times$10-3$\Omega$-1.cm-1 at 90$0^{\circ}C$ in air. The BaZr0.95Ga0.05O3-$\delta$ exhibited lower grain rsistance in wet atmosphere than in dry atmosphere and the reduction of resistance is due to the proton conduction.

  • PDF

Electrical Properties of Porous SiO2/ITO Nano Films (다공성 SiO2/ITO 나노박막의 전기적 특성)

  • Sin, Yong-Uk;Kim, Sang-U
    • Korean Journal of Materials Research
    • /
    • v.12 no.1
    • /
    • pp.94-99
    • /
    • 2002
  • The electrical properties of porous $SiO_2/ITO$ nano thin film were studied by complex impedance and conductive mechanisms were analyzed. According to the results of complex impedance, the activation energy of $SiO_2/ITO$ and $Zn-SiO_2/ITO$ were 0.309 eV, 0.077 eV in below $450^{\circ}C$ and 0.147 eV in over $450^{\circ}C$, respectively. In case of $SiO_2/ ITO$, slightly direct tunneling occurred at room temperature. The contribution for conduction was very tiny because of high barrier of silica. However, the conductivity abruptly increased in over $300^{\circ}C$ by Thermally assisted tunneling. In case of $Zn-SiO_2/ITO$, high conductivity in 1.26 ${\Omega}^{ -1}{cdot}cm^{-1}$ at room temperature appeared by space charge conduction or Frenkel-poole emission that Zn ions play a role as localized electron states.

Lightning impulse characteristics of large-scale ground rods (대형 봉상 접지전극의 뇌 임펄스 특성)

  • Lee, B.H.;Chang, K.C.;Lee, D.M.;Jeong, D.C.;Lee, S.C.;Ahn, C.H.;Jeong, Y.K.
    • Proceedings of the KIEE Conference
    • /
    • 2003.07c
    • /
    • pp.1849-1851
    • /
    • 2003
  • To obtain a low ground resistance in high resistivity soil, long vertical ground rods are often used. However, if the lightning current or fault current with high frequency flow into the grounding system, the ground impedance is significantly increased because of the inductive behavior. This paper presents how the impulse current works on the long vertical ground electrodes. The different shape of current was impressed between ground rods and auxiliary electrode by using impulse generator and the ground impedance was calculated from the ground potential rise.

  • PDF

IDENTIFICATION OF SKIN TISSUE PARAMETERS FROM THE IMPEDANCE MEASURED OVER THE SKIN SURFACE - SIMULATION

  • Park, K. C.;Y. Kagawa;Y. Zhao;W. Xu
    • Proceedings of the Korea Society for Simulation Conference
    • /
    • 2001.10a
    • /
    • pp.255-259
    • /
    • 2001
  • A skin tissue system is considered, whose configuration is electrically modelled by a layer over the infinite half space. The problem is to estimate the layer\`s thickness and respective conductivity from the measured impedance between the electrodes placed on the skin surface. A simulation is taken place as the optimization problem which is to minimize the norm between the \"measured\" and the solution for the assumed parameters.arameters.

  • PDF

Selection of mother wavelet for Low Impedance Fault Detection (Low Impedance Fault 검출을 위한 최적 마더 웨이브렛의 선정)

  • Byun, S.H.;Kim, C.H.;Kim, I.D.;Nam, K.N.
    • Proceedings of the KIEE Conference
    • /
    • 1997.07c
    • /
    • pp.1012-1014
    • /
    • 1997
  • This paper introduces wavelets and shows that they may be efficient and useful for the detection of general faults in power system. The wavelet transform of a signal consists in measuring the "similarity" between the signal and a set of translated and scaled versions of a "mother wavelet". The "mother wavelet" is a chosen fast decaying oscillation function. A number of mother wavelet for signal analysis have been proposed and some of them are in use in fault detection. However, the performance of fault detection depend on used mother wavelet. In the present paper a comparative evaluation of different mother wavelets for low impedance fault detection is performed. The discussion is focused in well-known mother wavelet based wavelet transform. Several families of wavelets are used to analyse transient earth fault signals in a 345kV model system as generated by EMTP.

  • PDF

Impedance of CoZrNb Film as a Function of Frequency (CoZrNb막의 주파수에 따른 임피던스의 변화)

  • Hur, J.;Kim, Y.H.;Shin, K.H.;Park, K.I.;SaGong, G.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.07b
    • /
    • pp.778-781
    • /
    • 2002
  • MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in the low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field$(H_k)$ as a function of a thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and $320^{\circ}C}$ respectively for 2 hours. Anisotropy field$(H_k)$ of film is measured by using a MH loop tracer. Its magnetic permeability of a film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb film is decreased due to the skin effect with increasing a thickness of the CoZrNb film, and hence its driving frequency is lowered. And, it was examined on the permeability and impedance to fabricate the MI sensor which acts at a low frequency by thickening a CoZrNb film relatively.

  • PDF

AC Voltage and Frequency Dependence in Tunneling Magnetoresistance Device (터널링 자기저항 소자의 교류 전압 및 주파수 의존성 연구)

  • Bae, Seong-Cheol;Yoon, Seok Soo;Kim, Dong Young
    • Journal of the Korean Magnetics Society
    • /
    • v.26 no.6
    • /
    • pp.201-205
    • /
    • 2016
  • In this report, we measured the impedance spectrum in TMR device, and the relaxation behavior of the real and imaginary impedance spectrum was analyzed by using the equilibrant circuit of tunneling capacitance ($C_T$) and tunneling resistance ($R_T$). The relaxation frequency was increased with AC voltage in both the parallel and antiparallel alignment of two magnetic layers. The $R_T$ with AC voltage showed the typical bias voltage dependence. However, the $C_T$ showed large value than the expected geometrical capacitance. The huge increase of $C_T$ was affecting as a limiting factor for the high speed operation of TMR devices. Thus, the supercapacitance of $C_T$ should be considered to design the high speed TMR devices.