• 한국국제농업개발학회지
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• 제23권5호
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• pp.560-569
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• 2011

본 연구의 목적은 일본의 식물유전체 연구 동향분석을 통하여 농업생산성 향상을 위한 연구방향을 모색하는데 있다. 일본에서의 식물유전체 연구는 국가연구소 주도적으로 이루어지고 있으며 벼 등 다양한 구조유전체연구결과를 이용한 유용형질 유전자 기능분석 및 실용화 연구에 집중하고 있다. 식물 구조유전체 및 기능유전체 연구를 위한 기반조성으로 농업생물자원연구소(National Institute of Agrobiological Sciences, NIAS)에서는 벼과 식물의 유전체 DB 구축, 이화학연구소(Rikagaku Kenkyusho, RIKEN)에서는 애기장대 유전체 DB 및 식물 완전장 유전자 DB 구축, 국립유전학연구소(National Institute of Genetics, NIG)에서는 국가생물자원프로젝트(National Bio Resource Project) DB를 구축하여 관련 연구자들에게 다양한 식물 유전체 정보 및 연구재료들을 제공하고 있다. 최근 세계적 식량환경 문제해결 및 혁신적 농업기술개발을 목표로 신농업전개 게놈프로젝트(New Agri-genome Project)를 수행하여 수량, 내병성, 환경문제 해결을위한 유용 유전자분리, 이용 등 세계적인 연구 성과를 도출하고 있다. 또한 개도국의 농업생산성 향상을 위하여 JIRCAS 에서는 식물유전체 연구 기술지원을 하고 있으며 아프리카 토양에 적합한 다수성의 NERICA 벼를 개발하여 식량생산 증진에 기여하고 있다. 본 연구를 통하여 우리에게 정보가 부족하였던 일본의 식물 유전체 연구 진행사항을 살펴보았다. 이러한 연구동향 분석은 동식물 유전체 연구를 수행하는 연구자들에게 최근의 유전체 기술정보 등을 제공 할 수 있으며 세계적인 식량, 에너지, 환경문제의 해결에 크게 기여 할 것으로 생각한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.