• Journal of Navigation and Port Research
• /
• v.34 no.3
• /
• pp.161-166
• /
• 2010

The bandwidth of detecting radars used for military purpose is increasingly broadened, and recently, the frequency band of the detecting radars is expanding to millimeterwave bands of the millimeterwave bands of 35 GHz and 94 GHz. Since, especially, it is essential and important to fabricate and develop EM wave absorber with the absorption ability more than 10 dB in 94 GHz band, the EM wave absorber was manufactured based on the design method by FDTD simulation. As a result, the developed EM wave absorber with the composition ratio of Binder(CPE with additional materials) : Carbon = 70 : 30 wt.% has the thickness of 0.7 mm and the absorption ability more than 14 dB in the frequency range of 94 GHz.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
• /
• 2009.10a
• /
• pp.54-55
• /
• 2009

The bandwidth of detecting radars used for military purpose is increasingly broadened, and recently, the frequency band of the detecting radars is expanding to millimeterwave bands c! the millimeterwave bands of 35 GHz and 94 GHz. Since, especially, it is essential and important to fabricate and develop EM wave absorber with the absorption ability more than 10 dB in 94 GHz band, the EM wave absorber was manufactured based on the design method by FDTD simulation As a result, the developed EM wave absorber with the composition ratio of Binder(CPE with additional materials) : Carbon = 70 : 30 wt.% has the thickness of 0.7 mm and the absorption ability more than 14 dB in the frequency range of 94 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.43 no.6 s.348
• /
• pp.46-52
• /
• 2006

We report on a high performance 94 GHz MMIC resistive mixer using 70-nm metamorphic high electron mobility transistor (MHEMT) and micro-machined W-band ring coupler. A novel 3-dimensional structure of resistive mixer was proposed in this work, and the ring coupler with the surface micro-machined dielectric-supported air-gap microstrip line (DAMLs) structure was used for high LO-RF isolation. The fabricated mixer showed an excellent LO-RF isolation of -29.3 dB and a low conversion loss of 8.9 dB at 94 GHz. To our knowledge, compared to previously reported W-band mixers, the proposed MHEMT-based resistive mixer using micro-machined ring coupler has shown superior LO-RF isolation as well as similar conversion loss.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.5
• /
• pp.471-482
• /
• 2015

In this paper, design and implementation of the 94 GHz Gunn oscillator and the evaluation of the maximum power of the Gunn diode used in the oscillator are presented. The 94 GHz Gunn oscillator is used InP Gunn diode and designed employing a WR-10 waveguide. The designed oscillator is fabricated through machining and its performance is measured. The fabricated oscillator shows an oscillation frequency of 95 GHz, output power of 12.64 dBm, and phase noise of -92.7 dBc/Hz at 1 MHz offset frequency. To evaluation the maximum power of the InP Gunn diode used in oscillator, the oscillator structure is modified to a structure having a diaphram. The height of thick diaphram which is used in the oscillator is varied. As a result, an oscillator has several different load impedances, which makes it possible to plot $G_L-V^2$ plot at the post plane. Using the $G_L-V^2$ plot, the maximum power of used Gunn diode including post is computed to be 16.8 dBm. Furthermore using the shorted and zero bias Gunn diode, the post loss used for DC biasing can be computed. Using the two losses, The maximum power of a InP Gunn diode is computed to be 18.55 dBm at 95 GHz. This result is close to a datasheet.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.921-924
• /
• 2005

We report low conversion loss and high LO to RF isolation 94 GHz MMIC resistive mixers based on 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The fabricated resistive mixers applied a one-stage amplifier on RF port of the mixer. By using the one-stage amplifier, we obtained the decrement of conversion loss and the increment of LO to RF isolation. So, we can obtain higher performances than conventional resistive mixers. The modified mixer shows excellent conversion loss of 6.7 dB at a LO power of 10 dBm. We also observed an extremely high isolation characteristic from the MMICs exhibiting the LO-RF isolation of 21 ${\pm}$ 0.5dB in a frequency range of 93.7${\sim}$ 94.3 GHz. The low conversion loss and high LO-RF isolation characteristics of the MMIC modified resistive mixers are mainly attributed to the performance of the MHEMTs exhibiting a maximum transconductance of 654 mS/mm, a current gain cut-off frequency of 173 GHz and a maximum oscillation frequency of 271 GHz.

• Proceedings of the IEEK Conference
• /
• 2008.06a
• /
• pp.411-412
• /
• 2008

The high performance 94 GHz MMIC(Monolithic Micro-wave Integrated Circuit) single balanced mixer was designed and fabricated, using MHEMT structure based diodes and a CPW(Coplanar Waveguide) tandem coupler. A novel single-balanced structure of diode mixer is proposed in this work, where a 3-dB tandem coupler with two section of parallel-coupled line. Implemented air-bridge crossover structures achieve wide frequency operation and the fabricated mixer exhibits excellent LO-RF isolation, larger than 30 dB, in the 5 GHz bandwidth of 91-96 GHz. A good conversion loss of 7.4 dB is measured at 94 GHz. The proposed MHEMT-based diode mixer shows superior LO-RF isolation and conversion loss to those of the W-band mixers reported to date.

• Journal of information and communication convergence engineering
• /
• v.13 no.2
• /
• pp.81-85
• /
• 2015

A 94-GHz phased array antenna using a log-periodic antenna has been developed on a GaAs substrate. The developed phased array antenna comprises four log-periodic antennas, a phase shifter, and a Wilkinson power divider. This antenna was fabricated using the standard microwave monolithic integrated circuit (MMIC) process including an air bridge for unipolar circuit implementations on the same GaAs substrate. The total chip size of the fabricated phased array antenna is 4.8 mm × 4.5 mm. Measurement results showed that the fabricated phased array antenna had a very wide band performance from 80 GHz to 110 GHz with return loss characteristics better than -10 dB. In the center frequency of 94 GHz, the fabricated phased array antenna showed a return loss of -16 dB and a gain of 4.43 dBi. The developed antenna is expected to be widely applied in many applications at W-band frequency.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.857-860
• /
• 2005

We reported 94 GHz, low conversion loss, and high isolation single balanced active-gate mixer based on 70 nm gate length InGaAs/InAlAs metamorphic high electron mobility transistors (MHEMTs). This mixer showed that the conversion loss and isolation characteristics were 2.5 ${\sim}$ 2.8 dB and under -30 dB, respectively, in the range of 93.65 ${\sim}$ 94.25 GHz. The low conversion loss of the mixer is mainly attributed to the high-performance of the MHEMTs exhibiting a maximum drain current density of 607 mA/mm, a extrinsic transconductance of 1015 mS/mm, a current gain cutoff frequency ($f_t$) of 330 GHz, and a maximum oscillation frequency ($f_{max}$) of 425 GHz. High isolation characteristics are due to hybrid ring coupler which adopted dielectric-supported air-gapped microstrip line (DAML) structure using surface micromachined technology. To our knowledge, these results are the best performance demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.765-768
• /
• 2005

In this paper, high LO-RF isolation 94 GHz MMIC single-balanced mixer was designed and fabricated using a branch line coupler and a ${\lambda}/4$ transmission line. The 94 GHz MMIC single-balanced mixer was designed using the 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT(MHEMT) diode. The fabricated MHEMT was obtained the cut-off frequency($f_T$) of 189 GHz and the maximum oscillation frequency($f_{max}$) of 334 GHz. The designed MMIC single-balanced mixer was fabricated using 0.1 ${\mu}m$ MHEMT MMIC process. From the measurement, the conversion loss of the single-balanced mixer was 23.1 dB at an LO power of 10 dBm. The LO-RF isolations of single-balanced mixer was obtained 45.5 dB at 94.19 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.42 no.6 s.336
• /
• pp.67-74
• /
• 2005

In this paper, high LO-RF isolation W-band MIMIC single-balanced mixer was designed and fabricated using a branch line coupler and a $\lambda$/4 transmission line. The simulation results of the designed 94 GHz balun show return loss of -27.9 dB, coupling of -4.26 dB, and thru of -3.77 dB at 94 GHz, respectively. The isolation and phase difference were 23.5 dB and $180.2^{\circ}$ at 94 GHz. The W-band MIMIC single-balanced mixer was designed using the 0.1 $\mu$m InGaAs/InAlAs/GaAs Metamorphic HEMT diode. The fabricated MHEMT was obtained the cut-off frequency(fT) of 189 GHz and the maximum oscillation frequency(fmax) of 334 GHz. The designed MIMIC single-balanced mixer was fabricated using 0.1 $\mu$m MHEMT MIMIC Process. From the measurement, the conversion loss of the single-balanced mixer was 23.1 dB at an LO power of 10 dBm. Pl dB(1 dB compression point) of input and output were 10 dBm and -13.9 dBm respectively. The LO-RF isolations of single-balanced mixer was obtained 45.5 dB at 94.19 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.