• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1006-1011
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• 1999

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4$, $CH_4$ and $B_2H_6$. Microstructures and chemical properties of a-SiC:H films grown with varing the volume ratio of $CH_4$ to $SiH_4$ were characterized with various analysis methods including scanning electron microscopy(SEM), X-ray diffractometry(XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy. X-ray photoelectron spectroscopy(XPS), UV absorption spectroscopy and photoconductivity measurements. While Si:H films grown without $CH_4$ showed amorphous state, the addition of $CH_4$ during deposition enhanced the development of a microcrystalline phase. By introducing C atoms into the film, Si-Si and Si--$\textrm{H}_{n}$ bonds of a -Si:H films were gradually replaced by Si-C, C-C, and Si--$\textrm{C}_{n}\textrm{H}_{m}$ bonds. Consequently, the electrical resistivity and optical bandgap of a-SiC:H films were increased with the C concentration in the film.

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.685-696
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• 1995

The most important techniques in the synthesis of SiC/C function gradient material (FGM) are to control the SiC/C ratio and to obtain the moderate deposition rate. For these, various gas systems and flow rates were attempted and evaluated. It turned out that the CH4＋SiCl4＋H2 system was suitable for the deposition of SiC-rich layers, the C3H8＋SiCl4＋Ar system for the deposition of carbon-rich layers, and the C3H8＋SiCl4＋H2＋Ar system was good to deposit the layers between them.

• Journal of the Korean Ceramic Society
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• v.24 no.1
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• pp.23-32
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• 1987

Synthesis of high purity ultrafine Si3N4 and ${\beta}$-Sialon powders was investigated via the simultaneous reduction and nitriding of amorphous SiO2, SiO2-Al2O3 system prepaerd by hydrolysis of alkoxides, using carbonablack as a reducing agent. In Si(OC2H5)4-C2H5 OH-H2 O-NH4OH system, hydrolysis rate increased with increasing reaction temperature and pH. Pure ${\alpha}$-Si3N4 was formed at 1350$^{\circ}C$ for 5 hrs in N2 atmosphere. In Si(OC2H5)4-Al(OC3H7)3-C6H6-H2 O-NH4OH system, weight loss increased as Si/Al ratio decreased. Single phase ${\beta}$-Sialon consisted of Si/Al=2 was formed at 1350$^{\circ}C$ in N2 and minor phases of ${\alpha}$-Si3N4, AIN, and X-phase were existed besides theSialon phase at other Si/Al ratios. The Si3N4 and Sialon powders synthesized from alkoxides consisted of uniform find particles of 0.05-0.2$\mu\textrm{m}$ in diameter, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.269-269
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• 2013

Usingvan der Waals (vdW) energy-corrected density-functional theory without or with self-consistent screening (SCS) effects, we calculate the adsorption energy of acetylene, ethylene and benzene on Si(100). We find that vdW interactions without SCS effects increase the adsorption energy by 0.23, 0.30, and 0.64 eV for adsorbed $C_2H_2$, $C_2H_4$, and $C_6H_6$ on Si(100), respectively. However, if SCS effects are included, this increase of the adsorption energy is reduced as 0.19, 0.24, and 0.54 eV for the three adsorption systems, respectively. The resulting adsorption energy for each system is between the values computed using the local-density approximation and the generalized-gradient approximation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.764-768
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• 2002

Characteristics of ohmic Co/Si/Co contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Co/Si/Co sputtered sequentially. The annealings were performed at $800^{\circ}C$ using RTP in vacuum ambient and $Ar:H_2$(9:1) ambient, respectively. The specific contact resistivity$(\rho_c)$, sheet resistance$(R_s)$, contact resistance$(R_c)$, transfer length$(L_T)$ were calculated from resistance$(R_T)$ versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were $\rho_c=1.0{\tiimes}10^{-5}{\Omega}cm^2$, $R_c=20{\Omega}$ and $L_T$ = 6.0 those of sample annealed at $Ar:H_2$(9:1) ambient were $\rho_c=4.0{\tiimes}10^{-6}{\Omega}cm^2$, $R_c=4.0{\Omega}$ and $L_T$ = 2.0. The physical properties of contacts were examined using XRD and AES. The results showed that cobalt silicide was formed on SiC and Co was migrated into SiC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.66-69
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.7
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• pp.670-674
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• 1991

This paper presents the material properties of LPCVD silicon films formed using Si2H6 gas at various deposition temperatures. To study the structural properties depending on the deposition temperature, XRD, EBD and TEM analyses were used. The maximum grain size in this experiment was obtained at the deposition temperature of 485ø C. It is discussed that LPCVD films formed below the deposition temperature of 485ø C are promising for low temperature TFT applications. The enhancement of the film characteristics results from the reduction of grain boundary density. We also observed that the film properties of Si2H6 at 600ø C was quite different from those of Si H4 at 600ø C. It has shown that the grain structure from a TEM analysis was elliptical and not dependent on the deposition temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.387-390
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}$c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below 300$^{\circ}C$. The SiH$_4$ concentration[F(SiH$_4$)/F(SiH$_4$).+(H$_2$)] is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}$c-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}$c-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of B$_2$H$\_$6/ to SiH$_4$ gas. The solar cells with structure of Al/nip ${\mu}$c-Si:H/TCO/g1ass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.144-144
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• 2000

이전에 수행된 연구에서 표면에 수직하게 dangling bond를 가지는 adatom으로 장식된 6H-SiC(0001) {{{{ SQRT { 3} }}}}$\times${{{{ SQRT { 3} }}}} 표면은 단일 전자 모형으로는 설명되어지지 않는 반도체적 성질을 가지는 것으로 보고되어졌다. 최근의 많은 이론적, 실험적 결과는 이 표면이 Mott-Hubbard 모형으로 설명되어질 수 있음이 보고되어졌다. 이 표면에서 Si이 좀 더 풍부한 3$\times$3 표면의 여러 모형들에 대해 이론적, 실험적 연구는 Energy적으로 E-J 모형이 가장 안정하다고 보고하였다. E-J모형은 표면에 수직인 dagling bond를 가지며 6H-SiC(0001) {{{{ SQRT { 3} }}}}$\times${{{{ SQRT { 3} }}}} 표면에 비해 1/3배의 밀도를 지닌다. 또한 최근의 연구에서 3$\times$3 표면 또한 단일 전자모형은 이 표면의 반도체적 성질에 위배되며 Mott-Hubbard 모형으로 설명되어질수 있음이 보고되어졌다. 이러한 표면 위에 알칼리금속인 Na을 흡착시키면서 일함수의 변화와 Valence Band의 변화를 측정하였다. XPS를 이용하여 Na이 흡착되면서 발생되는 Si과 C의 내각준위의 변화를 측정하였다. 6-SiC(0001) {{{{ SQRT { 3} }}}}$\times${{{{ SQRT { 3} }}}} 과 3$\times$3 표면 구조 모델을 Na을 흡착한 6H-SiC(0001) {{{{ SQRT { 3} }}}}$\times${{{{ SQRT { 3} }}}} 과 3$\times$3 표면으로부터 측정한 UPS, XPS data들로부터 지금까지 제기되어 있는 각 재배열 구조 모형들을 비교 검토하였다.

• Journal of the Korean Chemical Society
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• v.25 no.5
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• pp.311-317
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• 1981

A new nickel(II) compound, $Ni(CH_2SiMe_3)_2((C_6H_5)_2PCH_2CH_2P(C_6H_5)_2)$, 1, has been prepared by the reaction of $NiCl_2((C_6H_5)_2PCH_2CH_2P(C_6H_5)_2)$ with $Me_3SiCH_2Li$. The compound, 1, is stable under nitrogen at room temperature both in solution and in the solid state. Thermal decomposition of 1 in solution or in the solid produces the reductive coupling product, $Me_3SiCH_2CH_2SiMe_3$ which is also afforded by the reactions of 1 with CO and $O_2$ at room temperature, and with $(C_6H_5)_2PCH_2CH_2P(C_6H_5)_2$ at 80${\circ}$C.