• Journal of the Microelectronics and Packaging Society
• /
• 제11권2호
• /
• pp.29-35
• /
• 2004

Hafnium-oxide gate dielectric films deposited by a metal organic chemical vapor deposition technique on a $N_2-plasma$ treated SiNx and a hydrogen-terminated Si substrate have been investigated. In the case of $HfO_2$ film deposited on a hydrogen-terminated Si substrate, suppressed crystallization with effective carbon impurity reduction was obtained at $450^{\circ}C$. X-ray photoelectron spectroscopy indicated that the interface layer was Hf-silicate rather than phase separated Hf-silicide and silicon oxide structure. Capacitance-voltage measurements show equivalent oxide thickness of about 2.6nm for a 5.0 nm $HfO_2/Si$ single layer capacitor and of about 2.7 nm for a 5.7 nm $HfO_2/SiNx/Si$ stack capacitor. TEM shows that the interface of the stack capacitor is stable up to $900^{\circ}C$ for 30 sec.

• Food Science of Animal Resources
• /
• 제28권1호
• /
• pp.63-68
• /
• 2008

To develop the somatic cell counting NIR Spectrum method within a range of 400-2500 nm, eosin-Y, methyl red, methylene blue, resazurin and amido black 10B were tested at 0.01% in raw milk. The PLS (Partial Least Square) results are summarized as follows: Correlation coefficients of the calibration model measurements by NIR spectroscopy in raw milk for eosin-Y, methyl red, methylene blue, resazurin and amido black 10B were 0.78, 0.65, 0.63, 0.65, 0.98 and 0.99, respectively. The correlation coefficients of the prediction model measurements by NIR spectroscopy in raw milk for eosin-Y, methyl red, methylene blue, resazurin and amido black 10B were 0.49, 0.21, 0.36, 0.47, 0.95 and 0.98 respectively. Based on these results, amido black 10B was the best additive for the NIRS somatic cell count method.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• 제41권8호
• /
• pp.858-868
• /
• 1992

0.085Ba(LaS11/2TNbS11/2T)OS13T-0.915Pb(ZrS1yTTiS11-yT)OS13T (0.45$\leq$y$\leq$0.65) transparent electrooptic ceramics were fabricated by two-stage sintering method. The structural, ferroelectric and electrooptic properties were investigated varying composition and second sintering time. Also the possibility of application to electrooptic device was studied. If we increase the PbZrOS13T contents, dielectric constants were increased and Curie temperature was decreased. In the composition of 0.55[mol] PbZrOS13T, electromechanical coupling factor and piezoelectric charge constant were the highest values of 43[%] and 173x10S0-12T[C/N], respectively. Mechanical quality factors were decreased with the increasing PbZrOS13T contents. Light transmittance was increased with wavelength when measured from 300[nm] to 900[nm], and with PbZrOS13T contents in the range of 0.50[mol]-0.65[mol], and had the highest value of 67[%] in the composition of 0.65[mol] PbZrOS13T. From the results of ferroelectric hysteresis loop and transmitted light intensity with electric field, the specimens with compositions of 0.65,0.60,0.55[mol] PbZrOS13T were applicable to electrooptic memory device and those with compositions of 0.50,0.45[mol] PbZrOS13T were applicable to linear electrooptic device.

• Applied Chemistry for Engineering
• /
• 제10권6호
• /
• pp.828-831
• /
• 1999

5,15-Bis(mesityl)-10,20-bis(4-amino)porphyrin was synthesized with meso-(mesityl)dipyrromethane and 4-nitrobenzaldehyde. It was characterized with $^1H$-NMR spectroscopy, UV spectrophotometer, and GC-MASS. In UV spectrum, Soret-band(438 nm) and Q-bands(526, 572, 611 nm) were confirmed. In NMR spectrum, the characteristic peak of porphyrin was detected at -2.65 ppm. Copolyimide containing porphyrin structure was synthesized with mesityl-$TPP(NH_2)$, 3,3',4,4'-benzophenonetetracarboxylic dianhydride(BTDA) and 2,2-bis(4-(4-aminophenoxy)phenyl) hexafluoropropane(BAPHF) and characterized with UV and FT-IR spectrophotometer. The $T_g$ and $T_m$ of the synthesized copolyimide were 220.7 and $369.2^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.413-414
• /
• 2008

We have studied an organic layer thickness dependent optical properties and microcavity effects for top-emission organic light-emitting diodes. Manufactured top emission device, structure is Al(100nm)ITPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/Al(23nm). While a thickness of hole-transport layer of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm for two devices. A ratio of those two layers was kept to about 2:3. Variation of the layer thickness changes a traverse time of injected carriers across the organic layer, so that it may affect on the chance of probability of exciton formation. View-angle dependent emission spectra were measured for the optical measurements. Top-emission devices show that the emission peak wavelength shifts to longer wavelength as the organic layer thickness increases. For instance, it shifts from 490 to 555nm in the thickness range that we used. View-angle dependent emission spectra show that the emission intensity decreases as the view-angle increases. The organic layer thickness-dependent emission spectra show that the full width at half maximum decreases as the organic layer thickness increases. Top emission devices show that the full width at half maximum changes from 90 to 35nm as the organic layer thickness increases. In top-emission device, the microcavity effect is more vivid as the organic layer thickness increases.

• Composites Research
• /
• 제26권1호
• /
• pp.60-65
• /
• 2013

A nanolaminate consisting of alternate layers of aluminium oxide ($Al_2O_3$) (5 nm) and zirconium oxide ($ZrO_2$) (20 nm) was deposited at an optimized oxygen partial pressure of $3{\times}10^{-2}$ mbar by pulsed laser deposition. The nanolaminate film was analysed using high temperature X-ray diffraction (HTXRD) to study phase transition and thermal expansion behaviour. The surface morphology was investigated using field emission scanning electron microscopy (FE-SEM). High temperature X-ray diffraction indicated the crystallization temperature of tetragonal zirconia in the $Al_2O_3/ZrO_2$ multilayer-film was 873 K. The mean linear thermal expansion coefficient of tetragonal $ZrO_2$ was $4.7{\times}10^{-6}\;K^{-1}$ along a axis, while it was $13.68{\times}10^{-6}\;K{-1}$ along c axis in the temperature range 873-1373 K. The alumina was in amorphous nature. The FESEM studies showed the formation of uniform crystallites of zirconia with dense surface.

• Korean Journal of Veterinary Research
• /
• 제35권1호
• /
• pp.55-65
• /
• 1995

Ultrastructures of pancreatic endocrine cells containing glucagon, insulin, somatosratin and pancreatic polypeptide were studied in the pancreas of the Korean native goat by immunohistochemical and elecron microscopy. Glucagon immunoreatctive cells were round or fusiform in shape and contained secretory granules of 200-260 nm in diameter. The secretory granules were high in electron density and had a halo between the limiting membrane and the central granule core. Insulin immunoreactive cells were round or oval in shape, and contained various sizes of secretory granules from 135 to 300 nm in diameter. The secretory granules were low or moderate electron density and had a variform halo. Somatostatin immunoreactive cells were elliptical or fusiform shape with cytoplasmic processes. They contained the secretory granules of 140-320 nm with moderate electron densities. Pancreatic polypeptide immunoreactive cells were elliptical or fusiform and contained small secretory granules with high electron densities. The secretory granules were 120-230 nm in diameter and the least in number.

• 정보저장시스템학회:학술대회논문집
• /
• 정보저장시스템학회 2005년도 추계학술대회 논문집
• /
• pp.119-123
• /
• 2005

We report the random pattern characteristics of the super resolution near field structure(Super-RENS) write once read-many(WORM) disc at a blue laser optical system(laser wavelength 405nm, numerical aperture 0.85) and the Super-RENS read only memory(ROM) disc at a blue laser optical system(laser wavelength 659nm, numerical aperture 0.65). We used the WORM disc of which carrier-to-noise ratio (CNR) of 75nm is 47dB and ROM disc of which carrier-to-noise ratio (CNR) of 173nm is 45dB. We controlled the equalization (EQ) characteristics and used advanced partial-response maximum likelihood (PRML) technique. We obtained bit error rate (bER) of 10-3 level at 50GB WORM disc and bite error rate of 10-4 level at 50GB level ROM disc. This result shows high feasibility of Super-RENS technology for practical use.

• Journal of Environmental Science International
• /
• 제8권6호
• /
• pp.699-704
• /
• 1999

The Photodegradation efficient of total organic compounds in the drinking water has been studied using the methods of photocatalytic reaction and laser beam irradation. The results are summarized as follows; 1. The photodegradation efficiency of total organic compounds shows as $50\%\;to\;80\%$ as within one hour and after this the efficiency is decreased slowly. 2. The photodegradation efficiency of total organic compounds shows as 65 to $90\%$ within 3.3min. when Nd : YAG beam is irradiated to the water layer. 3. An excellent observation of the organic compound removal efficiency gives revealed in that case of the longest wavelength of 532nm is irradiated among the three kinds of laser beam sources of 532nm, 355nm and 266nm. 4. The organic compound removal efficiency shows high in the case of UV beam irradiation in the thin layer of water. However the efficiency is not depended on the thickness of water layer severely. 5. The removal efficiency of the organic compounds in the direct irradiation shows higher than the indirect irradiation in the case of UV beam, but the efficiency is not depended on the direction of irradiation in the case of Nd : YAG beam irradiation.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• 제29권11호
• /
• pp.59-65
• /
• 2015

By harnessing the thermal hysteresis behavior of vanadium dioxide($VO_2$), we demonstrated multi-resistance states in a two-terminal electronic device based on a $VO_2$ thin film by using a 966nm infrared laser diode as an excitation light source for resistance modulation. Before stimulating the device using 966nm laser pulses, the thermal hysteresis behavior of the device resistance was measured by using a temperature chamber. After that, the $VO_2$ device was thermally biased at ${\sim}71.6^{\circ}C$ so that its temperature fell into the thermal hysteresis region of the device resistance. Six multi-states of the device resistance could be obtained in the fabricated $VO_2$ device by five successive laser pulses with equal 10ms duration and increasing power. Each resistance states were maintained while the temperature bias was applied. And, the resistance fluctuation level was within 2.2% of the stabilized resistance and decreased down to less than 0.9% of the stabilized resistance 5s after the illumination.