• 제목/요약/키워드: 5V

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고체전해질용 CuO-$P_{2}O_{5}$-$Nb_{2}O_{5}$-$V_{2}O_{5}$계 유리의 결정화와 전기전도도 (Crystallization and conductivity of CuO--$P_{2}O_{5}$-$Nb_{2}O_{5}$-$V_{2}O_{5}$Glasses for Solid State Eletrolyte)

  • 손명모;이헌수;김종욱;김윤선;구할본
    • 한국전기전자재료학회논문지
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    • 제14권6호
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    • pp.475-480
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    • 2001
  • Glasses in he system CuO-P$_2$O$_{5}$ -Nb$_2$O$_{5}$ -Nb$_2$O$_{5}$ -V$_2$O$_{5}$ were prepared by a press-quenching method on the copper plate. the glass-ceramics from these glasses were obtained by post-heat treatment, and the crystallization behavior and DC conductivities were determined. The conductivities of the glasses were range from 10$^{-6}$ s.$cm^{-1}$ / at room temperature ,but the conductivities of the glass-ceramics were 10$^{-3}$ s.$cm^{-1}$ / increased by 10$^3$ order. The crystalline product in the glass-ceramics was CuV$_2$O$_{6}$ . the crystal growth of CuV$_2$O$_{6}$ phase increased with heat-treatment conditions. The linear relationship between il($\sigma$T) and T$^{-1}$ suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping(SPH) mechanism.

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정극 재료용 $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ 유리의 결정화 특성 (Crystallization properties of $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ Glass for cathod material)

  • 손명모;이헌수;구할본;정인성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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    • pp.311-315
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    • 2000
  • Vanadate glass in the $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ system containing 10mol% glass fonner, $P_2O_5$ and $Bi_2O_3$ was prepared by melting the batch in pt. crucible followed by Quenching on the copper plate. We found that $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ glass-ceramics obtained from nucleation of glass showed signifieantly higher capacity and longer cycle life than conventionally made crystalline $LiV_3O_{8}$. In the present paper, we describe the charge / discharge properties during crystallization process and find the best crystallization condition of $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ glass as cathod material.

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실리콘 액정표시 장치 시스템을 위한 00.5μm 이중 게이트 고전압 CMOS 공정 연구 (A Study on the 0.5μm Dual Gate High Voltage CMOS Process for Si Liquid Display System)

  • 송한정
    • 한국전기전자재료학회논문지
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    • 제15권12호
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    • pp.1021-1026
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    • 2002
  • As the development of semiconductor process technology continue to advance, ICs continue their trend toward higher performance low power system-on-chip (SOC). These circuits require on board multi power supply. In this paper, a 0.5 ㎛ dual date oxide CMOS Process technology for multi-power application is demonstrated. 5 V and 20 V devices fabricated by proposed process is measured. From 5 V devices using dual gate precess, we got almost the same characteristics as are obtained from standard 5 V devices. And the characteristics of the 20 V device demonstrates that 3 ㎛ devices with minimum gate length are available without reliability degradation. Electrical parameters in minimum 3 ㎛ devices are 520 ㎂/㎛ current density, 120 ㎷ DIBL, 24 V BV for NMOS and ,350 ㎂/㎛ current density, 180 ㎷ DIBL, 26 V BV for PMOS, respectively.

0.35 ㎛ BCD 공정을 이용한 보호회로 기능이 추가된 모바일용 LDO 레귤레이터 (Design of a LDO regulator with a protection Function using a 0.35 µ BCD process)

  • 이민지;손현식;박용수;송한정
    • 한국산학기술학회논문지
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    • 제16권1호
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    • pp.627-633
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    • 2015
  • 본 논문에서는 고속 PMIC(Power Management Integrated Circuit) 회로를 위한 저전압 입력 보호기능을 가지는 모바일용 LDO(Low Drop-Out) 레귤레이터를 설계하였다. 설계된 LDO 레귤레이터는 밴드갭 기준전압회로, 오차 증폭회로, 파워 트랜지스터 등으로 이루어진다. LDO 레귤레이터는 3.3 V 전원전압으로부터 2.5 V 출력을 갖도록 설계되었으며, 저전압 입력보호 기능을 하는 UVLO 회로는 전원부와 파워 트랜지스터 사이에 삽입된다. 또한 UVLO는 3.3 V 구동전압에서, 하강시 1.2 V 에서 LDO 레귤레이터 동작을 멈추게 하고, 구동전압 상승 시 2.5 V 에서 LDO 레귤레이터가 정상 동작한다. $0.35{\mu}m$ 5 V 저전압 CMOS 공정을 사용하여 모의실험 한 결과, 설계한 LDO 레귤레이터는 0.713 mV/V의 라인레귤레이션을 가지고, 부하전류가 0 mA에서 40 mA로 변할 때 $8.35{\mu}V/mA$의 로드레귤레이션을 보였다.

해양 Vibrio vulnificus의 생존에 미치는 환경적 요인의 영향 (The Effect of Environmental Factor on the Survival of Marine Vibrio vulnificus)

  • 이봉헌;박흥재
    • 한국환경과학회지
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    • 제5권2호
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    • pp.179-185
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    • 1996
  • 본 연구는 생명을 위협하는 Vibrio vulnificus의 생존에 온도, 염분 pH 및 자외선과 같은 환경적 요인이 어떠한 영향을 미치는 가를 알아보기 위하여 수행하였다. 6일 동안 15에서 ${25\circ}C$의 온도범위에서 V.vulnificus의 수는 증가하였지만 이 범위외에서 V.vulnifivus의 생존수는 감소하였다. 1에서 ${10\circ}C$사이에서의 실험 결과, V.vulnificus 가 $10{\circ}C$이하에서는 생존수가 적었다. 한편 6일 동안 5에서 25ppt정도의 염분조건에서는 V.vulnificus수는 감소하였다. 최적의 pH 영역은 6.5에서 8.0이었고 이 영역밖에서는 V.vulnificus의 생존율은 낮았다. 15와 $25{\circ}C$에서 자외선은 V.vulificus에 대해 살균효과를 나타내어서 2시간 동안 자외선 처리후 V.vulnificus수가 약 10,00배 감소되었다. 이상과 같은 결과들은 환경적 요인이 V.vulnificus의 생존에 미치는 영향이 크다는 것을 보여주었다.

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Effects of the $V_2$$O_5$ Additive on ${ZnNb_2}{O_6}$ Microwave Dielectrics

  • Yoo, Sang-Im;Kim, Dong-Wan;Wee, Sung-Hun;Hong, Kug-Sun
    • 한국세라믹학회지
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    • 제38권4호
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    • pp.308-313
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    • 2001
  • We report the effects of the V$_2$O$_{5}$ additive on the sintering behavior and microwave dielectric properties of ZnNb$_2$O$_{6}$ ceramics. Densification temperatures of V$_2$O$_{5}$-doped ZnNb$_2$O$_{6}$ samples are lowered to the range of 875-9$25^{\circ}C$ because of the liquid phase sintering. Doped samples are composed of a Zn(Nb,V)$_2$O$_{6}$ solid solution and second phases. Up to 5 wt% V$_2$O$_{5}$ is the only second phase, however, V$_2$O$_{5}$ also exists as the second phase for 10 wt% V$_2$O$_{5}$ addition. In comparison with reported values of undoped ZnNb$_2$O$_{6}$ ceramics, microwave properties of V$_2$O$_{5}$-doped ZnNb$_2$O$_{6}$ samples are seriously degraded, which is confirmed to originate from the second phases. The optimum microwave properties (Q$\times$f=13,800, $\varepsilon$$_{r}$=23, $\tau$$_{f}$=-66ppm/$^{\circ}C$) are obtained from ZnNb$_2$O$_{6}$ with the addition of 5 wt% V$_2$O$_{5}$ sintered at 90$0^{\circ}C$.90$0^{\circ}C$.EX>.

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정상적(正常的)인 한우(韓牛)의 심전도(心電圖)에 관(關)한 연구(硏究) I. 표준지유도(標準肢誘導) (Studies on electrocardiogram of the normal Korean native cattle I. Standard limb leads)

  • 최인혁;정인성;김남수;서두석
    • 대한수의학회지
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    • 제33권4호
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    • pp.719-734
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    • 1993
  • The electrocardiographic(ECG) parameters on the standard limb leads in the normal Korean native cattle have been measured with a 3 channel Electrocardiograph built in a computed analysis. The study was conducted on the animals 98 heads of mean age of 17.7 months. Conduction parameters, waves, intervals and segments have been recorded. The recordings were analyzed as to shape and amplitude of the P and T waves and the components of the QRS complex. Heart rate was recorded by the Electrocardiogram which were a mean of $80.4{\pm}11.6beats/min$. And the younger had a higher heart rate than the older one. Average conduction times in the RP, the QRS complex and the QTc interval recorded $166.7{\pm}23.1msec.$, $79.7{\pm}8.8msec.$ and $395.5{\pm}30.4msec.$, in the P and T wave duration recorded $70.1{\pm}13.5msec.$ and $97.6{\pm}16.9msec.$, and in the PR and ST segment duration recorded $97.9{\pm}23.5msec.$ and $173.9{\pm}40.3msec.$, respectively. The wave forms in each lead observed various types. The amplitudes of wave type showed the highest frequency in each lead that were analyzed as follow : 1. In P wave, amplitudes of the positive type showed the frequency of 65.3%, 82.7% and 52.0% in leads I, II and III that were $103.1{\pm}47.8{\mu}V$, $115.2{\pm}37.3{\mu}V$ and $67.4{\pm}26.9{\mu}V$, and it showed the frequency of 54.1% and 85.7% in the leads aVL and aVF that were $63.7{\pm}23.0{\mu}V$, $88.0{\pm}83.6{\mu}V$, respectively. Average amplitude of the negative type showed the frequency of 78.6% in lead aVR which was $99.3{\pm}38.0{\mu}V$. 2. Average amplitude of the QRS complex were from $362.8{\pm}177.7{\mu}V$ to $532.8{\pm}253.9{\mu}V$(mean of $449.1{\pm}57.2{\mu}V$) that in all leads except lead I were manifested the Low-Voltage QRS complex(below 0.5mV). Average amplitudes of each wave type in the QRS complex aere $-50.2.4{\pm}258.2{\mu}V$ and $-428.6{\pm}195.1{\mu}V$ in the QS groups type that showed a frequency of 66.3%, 70.4% in the leads I and aVL, were $451.1{\pm}20.4.0{\mu}V$, $387.6{\pm}175.8{\mu}V$ and $299.3{\pm}146.5{\mu}V$ in the R groups type that showed a frequency of 48.0%, 53.1% and 34.7% in the leads III, aVR and aVF, and were $-307.5{\pm}180.3{\mu}V$, $201.4{\pm}77.2{\mu}V$ in the QR wave type which showed a frequency of 39.8% in lead II, respectively. 3. In T wave, amplitude of the positive type showed the frequency of 50.0%, 82.7%, 51.0% and 57.1% in leads II, III aVR and aVF which were $214.9{\pm}115.6{\mu}V$, $188.5{\pm}119.3{\mu}V$, $191.0{\pm}93.7{\mu}V$ and $165.7{\pm}91.9{\mu}V$, and the negative type showed a frequecny of 66.3% and 72.5% in leads I and aVL. that were $221.3{\pm}112.5{\mu}V$, $-173.6{\pm}86.7{\mu}V$, respectively. 4. Amplitude of ST segment in leads I, II and III were a mean of $-12.2{\pm}37.2{\mu}V$, $17.5{\pm}42.6{\mu}V$ and $28.3{\pm}40.4{\mu}V$, in leads aVR, aVL and aVF were $-3.9{\pm}32.5{\mu}V$, $-15.9{\pm}35.6{\mu}V$ and $26.2{\pm}37.5{\mu}V$, respectively.

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간흡충 세르카리아의 Chaetotaxy에 관한 연구 (Cercarial Chaetotaxy of Clonoychis sinensis)

  • 민득영;김재진
    • Parasites, Hosts and Diseases
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    • 제26권2호
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    • pp.113-116
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    • 1988
  • 간흡충 세르카리아의 감각유두 분포양상 즉 chaetotaxy를 관찰하였다. 이 세르카리아의 chaetotaxy는 두부(cephalic region)에서 제1열에 5∼6 Ci 1, 4∼5 Ci 2, 5∼6 Ci 3, 제2열에 4 Cii 1, 2 Cii 2, 4 Cii 3, 5∼6 Cii 4, 제3열에 3∼4 Ciii 1, 2∼3 Ciii 2, 및 제 4열에 2 Civ 1, 2∼3 Civ 2, 2∼3 Civ 3의 분포를 보였으며, 몸통 부위 (body region)의 각측(V) 및 때측(D)에서 2 AiV, 1 AiD, 2 AiiV, 1 AiiB,2 kiiiv,2 AiiiD, 1 AivV, 1 AivD, 1 PiiD, 1 PiiiD, 그리고 꼬리 부위(caudal region)에서 2-2-2-2의 분포양상을 보였다. 이 결과를Opisthorchis chabaudi 및 Metagonimus yokugawai에서 보고된 chaetotaxy와 비교하였다.

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Low operating voltage and long lifetime organic light-emitting diodes with vanadium oxide $(V_2O_5)$ doped hole transport layer

  • Yun, J.Y.;Noh, S.U.;Shin, Y.C.;Baek, H.I.;Lee, C.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1038-1041
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    • 2006
  • We report low operating voltage and long lifetime organic light-emitting diodes (OLEDs) with a vanadium oxide $(V_2O_5)-doped$ N,N'-di(1-naphthyl)- N,N'-diphenylbenzidine $({\alpha}-NPD)$ layer between indium tin oxide and ${\alpha}-NPD$. At a luminance of $1000\;cd/m^2$, $V_2O_5$ doped ${\alpha}-NPD$ device shows a operation voltage of 5.1V, while the device without $V_2O_5$ shows 5.8V. The $V_2O_5$ doped $({\alpha}-NPD)$ device also shows a longer lifetime and smaller operation voltage variation over time. It is suggested that the improved device performance can be attributed to the higher hole-injection efficiency and stability of the $V_2O_5$ doped $({\alpha}-NPD)$ layer.

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