• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.21-26
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• 2004

Results from PL and Raman spectroscopic analyses of HPHT (high-pressure high-temperature) treated type IIa diamonds are presented, and these spectral characteristics are compared with those of untreated diamonds of similar color and type. We identify a number of significant changes by 325 nm He/Cd laser excitation. Several peaks are removed completely, including H4, H3 system in HPHT treated diamond. The N3 system, however, increased in emission. Also we can find the behaviour of the nitrogen-vacancy related center N-V centers at 575 and 637.1 nm, as observed with 514 nm Ar ion laser excitation. When these centers are present, the FWHM (full width at half maximum) of 637.1 nm luminescence intensities offers a potential means of separating HPHT-treated from untreated type IIa diamonds. The width of 637.1 nm $(N-V)^-$line measured at the position oi half the peak's height are determine to range from 19.8 to $32.1cm^{-1}$ for HPHT treated diamonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.