• Current Optics and Photonics
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• v.7 no.5
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• pp.518-528
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• 2023

As an effective means of remotely detecting the spectral information of the object, the spectral calibration for the Savart polarization interference imaging spectrometer (SPIIS) is a basis and prerequisite of information quantification, and its experimental calibration scheme is firstly proposed in this paper. In order to evaluate the accuracy of the spectral information acquisition, the linear interpolation, cubic spline interpolation, and piecewise cubic interpolation algorithms are adopted, and the precision of the quadratic polynomial fitting is the highest, whose fitting error is better than 5.8642 nm in the wavelength range of [500 nm, 820 nm]. Besides, the inversed value of the spectral resolution for the monochromatic light is greater than the theoretical value, and the deviation between them becomes larger with the wavelength increasing, which is mainly caused by the structural design of the SPIIS, together with the rationality of the spectral restoration algorithm and the selection of the maximum optical path difference (OPD). This work demonstrates that the SPIIS has achieved high performance assuring the feasibility of its practical use in various fields.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.63-73
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• 2004

A simple analytical model has been presented for the study of the optical bistability using a $GaAs-Al_{0.32}Ga_{0.68}As$ multiple quantum well (MQW) p-i-n diode structure. The calculation of the optical absorption is based on a semi-emperical model which is accurately valid for a range of wells between 5 and 20 nm and the electric field F< 200kV/cm . The electric field dependent analytical expression for the responsivity is presented. An attempt has been made to derive the analytical relationship between the incident optical power ( $(P_{in})$ ) and the voltage V across the device when the diode is reverse biased by a power supply in series with a load resistor. The relationship between $P_{in}$ and $P_{out}$ (i.e. transmitted optical power) is also presented. Numerical results are presented for a typical case of well size $L_Z=10.5nm,\;barrier\;size\;L_B=9.5nm$ optical wave length l = 851.7nm and electric field F? 100kV/cm. It has been shown that for the values of $P_{in}$ within certain range, the device changes its state in such a way that corresponding to every value of $P_{in}$ , two stable states and one unstable state of V as well as of $P_{out}$ are obtained which shows the optically controlled bistable nature of the device.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.259-259
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• 2016

반도체 산업 전반에 걸쳐 이루어지고 있는 연구는 소자를 더 작게 만들면서도 구동능력은 우수한 소자를 만들어내는 것이라고 할 수 있다. 따라서 소자의 미세화와 함께 트랜지스터의 구동능력의 향상을 위한 기술개발에 대한 필요성이 점차 커지고 있으며, 고유전(high-k)재료를 트랜지스터의 게이트 절연막으로 이용하는 방법이 개발되고 있다. High-k 재료를 트랜지스터의 게이트 절연막에 적용하면 낮은 전압으로 소자를 구동할 수 있어서 소비전력이 감소하고 소자의 미세화 측면에서도 매우 유리하다. 그러나, 초미세화된 소자를 제작하기 위하여 high-k 절연막의 두께를 줄이게 되면, 전기적 용량(capacitance)은 커지지만 에너지 밴드 오프셋(band-offset)이 기존의 실리콘 산화막(SiO2)보다 작고 또한 열공정에 의해 쉽게 결정화가 이루어지기 때문에 누설전류가 발생하여 소자의 열화를 초래할 수 있다. 따라서, 최근에는 이러한 문제를 해결하기 위하여 게이트 절연막 엔지니어링을 통해서 누설전류를 줄이면서 전기적 용량을 확보할 수 있는 연구가 주목받고 있다. 본 실험에서는 high-k 물질인 Ta2O5와 SiO2를 적층시켜서 누설전류를 줄이면서 동시에 높은 캐패시턴스를 달성할 수 있는 게이트 절연막 엔지니어링에 대한 연구를 진행하였다. 먼저 n-type Si 기판을 표준 RCA 세정한 다음, RF sputter를 사용하여 두께가 Ta2O5/SiO2 = 50/0, 50/5, 50/10, 25/10, 25/5 nm인 적층구조의 게이트 절연막을 형성하였다. 다음으로 Al 게이트 전극을 150 nm의 두께로 증착한 다음, 전기적 특성 개선을 위하여 furnace N2 분위기에서 $400^{\circ}C$로 30분간 후속 열처리를 진행하여 MOS capacitor 소자를 제작하였고, I-V 및 C-V 측정을 통하여 형성된 게이트 절연막의 전기적 특성을 평가하였다. 그 결과, Ta2O5/SiO2 = 50/0, 50/5, 50/10 nm인 게이트 절연막들은 누설전류는 낮지만, 큰 용량을 얻을 수 없었다. 한편, Ta2O5/SiO2 = 25/10, 25/5 nm의 조합에서는 충분한 용량을 확보할 수 있었다. 적층된 게이트 절연막의 유전상수는 25/5 nm, 25/10 nm 각각 8.3, 7.6으로 비슷하였지만, 문턱치 전압(VTH)은 각각 -0.64 V, -0.18 V로 25/10 nm가 0 V에 보다 근접한 값을 나타내었다. 한편, 누설전류는 25/10 nm가 25/5 nm보다 약 20 nA (@5 V) 낮은 것을 확인할 수 있었으며 절연파괴전압(breakdown voltage)도 증가한 것을 확인하였다. 결론적으로 Ta2O5/SiO2 적층 절연막의 두께가 25nm/10nm에서 최적의 특성을 얻을 수 있었으며, 본 실험과 같이 게이트 절연막 엔지니어링을 통하여 효과적으로 누설전류를 줄이고 게이트 용량을 증가시킴으로써 고집적화된 소자의 제작에 유용한 기술로 기대된다.

• Analytical Science and Technology
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• v.10 no.6
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• pp.433-438
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• 1997

The enhancing effect of n-octanol on the fluorescence intensity of the $Eu^{3+}$-thenoyltrifluoroacetone(TTA) system in the presence of Triton X-100 was studied using spectrofluorometric method. This complex exhibited very intense $Eu^{3+}$ ion fluorescence at 619nm, when optically excited at 345nm. Optimum conditions for the determination of n-octanol have also been investigated. The calibration graph was linear over the range $1{\times}10^{-5}M{\sim}1{\times}10^{-7}M$ and the detection limit for n-octanol is $1{\times}10^{-9}M$. The result obtained in the analysis of the synthetic sample agreed with the known value in the error range and the relative standard deviation was ca. 3.5%.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.29-34
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• 1993

a-Si : H photodiodes for image sensor have been fabricated and characterized. Photosensitivity of a ITO/a-Si : H/Al photodiode without blocking layer was 0.7 under the applied voltage of 5 V and peak spectral sensitivity in visible region was found at 620 nm. Dark current of ITO/a-SiN : H/a-Si : H/p-a-Si : H/Al photodiode was suppressed by hole blocking layer and electron blocking layer at the value of lower than 1.5 pA to the applied voltage of 10 V. Also maximum photosensitivity was about 1 under the applied voltage of 3 V and peak spectral sensitivity was found at 540 nm.

• Korean Journal of Metals and Materials
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• v.48 no.1
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• pp.1-7
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• 2010

Experiments have demonstrated that the addition of a moderate amount of V to $Fe_{52}Co_{(20-x)}B_{20}Si_4Nb_4V_x$ amorphous alloy enhances the plasticity of the alloy. In particular, $Fe_{52}Co_{17.5}B_{20}Si_4Nb_4V_{2.5}$ alloy withstood a maximum of 8.3% strain prior to fracture along with a strength exceeding 4.7 GPa. Energy dispersive x-ray spectroscopy conducted on the $Fe_{52}Co_{17.5}B_{20}Si_4Nb_4V_{2.5}$ alloy exhibited evidence of compositional modulation, indicating that nm-scale phase separation had occurred at local regions. In this study, the role played by nm-scale phase separation on the plasticity was investigated in terms of structural disordering and shear localization in order to better understand the structural origin of the enhanced plasticity shown by the developed alloy.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.29-37
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• 2021

A 7 nm technology node using extreme ultraviolet lithography with a wavelength of 13.5 nm has been recently developed and applied to the semiconductor manufacturing process. Furthermore, the development of sub-3 nm technology nodes continues to be required. In this study, design factors of an electrostatic deflector for an ultra-miniaturized microcolumn system that can realize an electron wavelength of below 1.23 nm with an acceleration voltage of above 1 eV were investigated using a three-dimensional simulator. Particularly, the optimal design of the electrostatic octupole floating deflector was derived by optimizing the design elements and improving the driving method of the 1 keV low energy ultra-miniaturized microcolumn deflector. As a result, the entire wide field of view greater than 330 ㎛ at a working distance of 4 mm was realized with an ultra-high-resolution electron beam spot smaller than 10 nm. The results of this study are expected to be a basis technology for realizing a wafer-scale multi-array microcolumn system, which is expected to innovatively improve the throughput per unit time, which is the biggest drawback of electron beam lithography.

• Journal of Biomedical Engineering Research
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• v.7 no.2
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• pp.111-112
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• 1986

Radiation-induced fibrosarcoma tumors were grown on the flanks of C3H mice. The mice were divided into two groups. One group was injected with Photofrin II, intravenously (2.5mg/kg body weight). The other group received no Photofrin II. Mice from both groups were irradialed for approximately 15 minutes at 100, 300, or 500 mW/cm2 with the argon (488nm/514.5 nm), dye(628nm) and gold vapor (pulsed 628 nm) laser light. A photosensitizer behaved as an added absorber. Under our experimental conditions, the presence of Photolfrin II increased surface temperature by at least 40% and the temperature rise due to 300 mW/cm2 irradiation exceeded values for hyperthermia. Light and temperature distributions with depth were estimated by a computer model. The model demonstrated the influence of wavelength on the thermal process and proved to be a valuable tool to investigate internal temperature rise.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1283-1286
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• 2009

The structural and optical properties on $Tb^{3+}$ addition into LiGd$(PO_3)_4$ compound were investigated by X-ray powder diffraction and photoluminescence spectroscopy. The emission spectrum shows the strongest peak corresponding to the $^5D_4{\rightarrow}^7F_5$ transition of $Tb^{3+}$ at 546 nm under 147 nm and 173 nm excitation. 85 mol% concentration of $Tb^{3+}$ for LiGd$(PO_3)_4$ is much higher than other Tb-doped phosphors.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.721-723
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• 2002

We report a new red light emitting fluorene-based copolymer, poly{9,9-bis(2'-ethylhexyl)fluorene-2,7-diyl-co-2, 5-bis(2-thienyl-1-cyanovinyl}-1-(2'-ethylhexyloxy)-4methoxybenzene-5",5'''-diyl} (PFTCVB). The synthesized copolymers showed the absorption maxima at about 380 nm and the absorption between 425 and 600 nm increased as the fraction of the thiophene-containing monomer (BTCVB) increased. In PL, the emission maxima of the copolymers were red-shifted as the fraction of BTCVB increased, despite the similar absorption characteristics were shown in the UV-visible spectra. The copolymer containing 15 mol% of BTCVB showed a maximum PL and EL emission at 620 and 630 nm.