• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.2
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• pp.10-16
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• 2003

An electronic ballast for driving automotive HID lamps is presented. The circuit topology is composed of a fly back converter, a half bridge inverter, and igniter using voltage doubler. A prototype was developed and tested on a 35W lamp with a 12V input voltage. To avoiding acoustic resonance the half bridge inverter is operated at 400Hz and provided a squared-wave voltage source to the lamp. The transient and steady state characteristics of the tested HID lapm are measured and analyzed.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.4
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• pp.334-340
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• 2004

In this paper, an efficient switching pattern to equalize the size of transformer is proposed for a multi-level inverter employing cascaded transformers. It is based on the prior selected harmonic elimination PWM(SHEPWM) method. Because the maximum magnetic flux imposed on each transformer becomes exactly equal each to each, all transformers can be designed with the same size regardless of their position. Therefore, identical full-bridge inverter units can be utilized, thus improving modularity and manufacturability. The fundamental idea of the proposed switching pattern is illustrated and then analyzed theoretically. The validity of the proposed switching strategy is verified by experimental results.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.7
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• pp.74-80
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• 2006

This paper describes a solar energy conversion strategy is applied to grid-connected single phase inverter by the maximum power point of conversion strategy. The maximum power point of tracking is controlled output power of PV(photovoltaic)modules, based on generated circuit control MOSFET switch of two boost converter for a connected single phase inverter with four IGBT's switch in full bridge. The generation control circuit allows each photovoltaic module to operate independently at peak capacity, simply by detecting of the output power of PV module. Furthermore, the generation control circuit attenuates low-frequency ripple voltage. which is caused by the full-bridge inverter, across the photovoltaic modules. The effectiveness of the proposed inverter system is confirmed experimentally and by means of simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.260-263
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• 2002

There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in $45^{\circ}$ Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ was shown in the range of about ${\leq}{\pm}5$ Oe.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.48-50
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• 2018

본 논문은 광물 탐사용 25kW 양극성 펄스전원장치에 대해 기술한다. 고효율 LCC 공진형 컨버터와 풀 브리지 기반 바이폴라 펄스 스위칭부로 구성된 500V, 12.5A 단위 모듈을 설계한다. LCC 공진형 컨버터는 도전 손실을 줄이기 위해 사다리꼴 모양의 공진 전류를 갖도록 하고, 높은 전력 밀도를 달성하기 위해 변압기의 누설 인덕턴스를 공진 인덕턴스로 활용한다. 또한, 반복적인 짧은 펄스 기반으로 설계된 게이트 구동 회로는 DC에서 8kHz의 주파수 범위를 동작시키고 게이트 변압기의 사이즈를 줄이기 위해 제안된다. 개발된 양극성 펄스전원장치는 4개의 모듈이 직병렬로 결선되어 부하 조건에 따라 Grounded dipole mode (2kV, 12.5A) 또는 Loop mode (500V, 50A)로 동작한다. 네 모듈의 출력 전압 밸런싱을 충족시키기 위해 LCC 공진형 컨버터의 변압기에 보상권선이 감긴다. 본 논문에서는 양극성 펄스전원 장치의 상세설계에 대해 기술하고, 시뮬레이션 및 실험 결과를 통해 이를 검증한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.481-484
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. These crystals were obtained by lowering the quartz ampoule for growth in the furnace and growth rate at optimum condition is 0.4mm/hr. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes together with their overtones and combinations were observed. Optical properties were investigated by photoluminescence at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undoped-lnSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution.

• Journal of the Korean Chemical Society
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• v.18 no.2
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• pp.126-131
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• 1974

Trioctylamine-and tricaprylylmethylammonium chloride-tungstate salts have been prepared by solvent extraction from the sodium tungstate solution of various acidities(pH = 2, 4, 6). The molecular weights of the amine-tungstate salts thus obtained could be cryoscopically measured in benzene by means of a home-built Wheatstone bridge utilizing thermistor with sensitivity of 1/$4000^{\circ}C$. The cryoscopic data along with the results of chemical analysis and infrared spectra of the salts indicate that the amine-tungstates prepared at pH = 2 and 4 are all metatungstate whereas the salt obtained at pH = 6 is an unknown form quite different from the expected paratungstate.R = 0.14. By hydrogen bonding a guanidyl nitrogen of a sulfaguanidine molecule is linked to the sulfonyl oxygens of the other molecules indirectly through two different water molecules. The role of water molecule is both a .
nor and an acceptor in hydrogen-bonding formation and these hydrogen bonds are tetrahedrally o？ented. The hydrogen-bonding networks form infinite molecular layers parallel to (001) plane.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.885-890
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• 1996

Undoped p-type and Te doped n-type GaSb crystals were grown by the vertical Bridgman method. The lattice constant of the GaSb crystals was 6.096.+-.000373.angs.. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p.iden.8*10$^{16}$ c $m^{-3}$ , .rho..iden.0.20 .ohm.-cm, .mu.$_{p}$ .iden.400c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.1*10$^{17}$ c $m^{-3}$ , .rho..iden.0.15 .ohm.-cm, .mu.$_{n}$ .iden.500c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type at 300K. In case of treatment with metal ion of R $u^{+3}$, P $t^{+4}$, the carrier concentration, resistivity and carrier mobility of the GaSb crystals were p.iden.2*10$^{17}$ c $m^{-3}$ , .rho..iden.0.08.ohm.-cm, .mu.$_{p}$ .iden.420c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.2.5*10$^{17}$ c $m^{-3}$ , .rho..iden.0.07.ohm.-cm, .mu.$_{n}$ .iden.520c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type respectively. GaSb crystals had a tendency to lower resistivity and higher mobility, for surface treatment with metal ion effectively diminished surface recombination centers.s.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.4
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• pp.356-362
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• 2005

In this paper, in order to develop a simple and high efficient ballast without an external ignitor, a half-bridge type ballast with a coupled inductor and a frequency controlled synchronous rectifier is proposed. The Internal LC resonance of the buck converter is used to generate a high voltage pulse for the ignition, and the coupled inductor filter is used for steady state ripple cancellation. Also, a synchronous buck converter is applied for the DC/DC converter stage. In order to improve the efficiency of the ballast, a frequency control method is proposed. This scheme reduces a circulation current and trun off loss of the MOSFET switch on the constant power operation, which results in increase of the efficiency of the ballast system about 4$\%$, compared to a fixed frequency control. It consists a 2-stage version ballast with a PFC circuit. The results are verified nth hardware experiments.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.226-232
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• 1997

Ternary semiconductor $Al_{x}$G $a_{1-x}$ Sb crystals which have energy gap of 0.7eV-1.6 eV at room temperature according to the composition ratios were grown by the vertical Bridgman method. The characteristics of the crystals were investigated by XRD, HRTEM and Hall effect. The lattice constants of $Al_{x}$G $a_{1-x}$ Sb crystals were varied from 6.096A over .deg. to 6.135A over .deg. with the composition ratio x. The Hall effect of the $Al_{x}$G $a_{1-x}$ Sb crystals were measured by van der Pauw method with the magnetic field of 3 kilogauss at room temperature. The resistivities of Te-doped $Al_{x}$G $a_{1-x}$ Sb crystals were increased from 0.071 to 5 .OMEGA.-cm at room temperature according to the increment of the composition ratio x. The mobilies of $Al_{x}$G $a_{1-x}$ Sb crystals varied with the composition ratio x resulted in the following three different regions of GaSb-like (0.leq.x.leq.0.3), intermediate (0.3.leq.x.leq.0.4) and AlSb-like (0.4.leq.x.leq.l).q.l).q.l).q.l).