• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.71-78
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• 2009

An 8${\times}$8-Gb/s/channel 4-PAM transceiver was designed for high speed memory applications by using 70nm DRAM process with 1.35V supply. An asymmetric 4-PAM signaling scheme is proposed to increase the voltage and time margin of upper and lower eyes in 3-class eye opening. A mathematical basis shows that this scheme statistically reduces 33% of reference noise effect in a receiver. Also, an adaptive pre-emphasis scheme, which utilizes a lone-bit pulse with integrator at the receiver, is introduced to reduce ISI for a simple DRAM channel. In this scheme, an integrating clock timing calibration by using a pre-determined pattern is proposed for the optimum ISI measurement.

• Korean Journal of Optics and Photonics
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• v.34 no.4
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• pp.151-156
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• 2023

We propose to implement cost-effectively a high-speed short-haul interconnect by transmitting a 200-Gb/s/λ two-channel optical time-division-multiplexed signal generated by a carrier-suppressed optical pulse, which improves the robustness of the multiplexed signal to chromatic dispersion. The multiplexed 200-Gb/s signal is generated in the transmitter by combining two 100-Gb/s 4-level pulse-amplitude-modulated signals (generated using the optical pulse and two Mach-Zehnder modulators). After the signal is transmitted over a fiber, it is amplified by a semiconductor optical amplifier and detected by a photodiode. The amplified spontaneous emission noise is eliminated by an optical band-pass filter. The transmitted signal is reconstructed by a 2 × 2 multiple-input multiple-output equalizer, which compensates for crosstalk. Due to the use of the carrier-suppressed optical pulse, the 200-Gb/s signal can be transmitted over fiber with a chromatic dispersion of 40 ps/nm.