• 센서학회지
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• 제11권3호
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• pp.163-170
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• 2002

본 논문에서는 양극반응과 복합 산화법($H_2O/O_2$ 분위기에서 $500^{\circ}C$, 1시간 열산화와 $1050^{\circ}C$, 2분간 RTO(Rapid Thermal Oxidation) 공정)을 이용한 두꺼운 OPSL(Oxidized Porous Silicon Layer)을 형성하여 이를 마이크로머시닝 기술을 이용함으로써 $10\;{\mu}m$ 두께의 OPS(Oxidized Porous Silicon) 에어 브리지를 제조하고, 그 위에 전송선로를 형성하여 그 RF 특성을 조사하였다. OPS 에어 브리지 위에 형성된 CPW(Coplanar Waveguide)의 손실이 OPSL 위에 형성된 전송선의 삽입손실보다 약 2dB 정도 적은 것을 보여주었으며, 반사손실은 OPSL 위에 형성된 전송선의 반사손실보다 적으며 약 -20 dB를 넘지 않고 있다. 본 연구에서 개발한 산화된 다공질 실리콘 멤브레인 및 에어 브리지 구조는 CMOS 공정 후에 사용 가능하며, 초고주파 회로 설계시 편리성과 유용성을 제시하고 있다.

• Journal of Electrical Engineering and information Science
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• 제3권2호
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.