• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.408-409
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• 2006

The polycrystalline 3C-SiC thin films heteroepitaxially grown by LPCVD method using single precursor 1. 3-disilabutane at $850^{\circ}C$. The crystallinity of the 3C-SiC thin film. was analyzed by XPS. Residual strain was investigated by Raman scattering. The surface morphology and voids between SiC and $SiO_2$ were measured by SEM. The grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS applications.

• Journal of the Korean Ceramic Society
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• v.53 no.1
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• pp.87-92
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• 2016

Due to its stability at high temperature and its layered structure, $Ti_3SiC_2$ MAX phase was considered to the interphase of $SiC_f/SiC$ composite. In this study, $Ti_3SiC_2$ MAX phase powder was deposited on SiC fiber via the electrophoretic deposition (EPD) method. The Zeta potential of the $Ti_3SiC_2$ suspension with and without polyethyleneimine as a dispersant was measured to determine the conditions of the EPD experiments. Using a suspension with 0.03 wt.% ball milled $Ti_3SiC_2$ powder and 0.3 wt.% PEI, $Ti_3SiC_2$ MAX phase was successfully coated on SiC fiber with an EPD voltage of 10 V for 2 h. Most of the coated $Ti_3SiC_2$ powders are composed of spherical particles. Part of the $Ti_3SiC_2$ powders that are platelet shaped are oriented parallel to the SiC fiber surface. From these results we expect that $Ti_3SiC_2$ can be applied to the interphase of $SiC_f/SiC$ composites.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.396-400
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• 2003

A new synthesis process for nano laminating Ti$_3$SiC$_2$ has been developed using TiCx (x=0.67) and Si powder as starting materials by a reaction hot pressing. Bulk Ti$_3$SiC$_2$ was fabricated using a green body consisting of TiCx and Si by a hot pressing under the pressures of 25 MPa at 1420-1550 $^{\circ}C$ for 90 min. The synthesized Ti$_3$SiC$_2$ was consisting of only TiCx and Ti$_3$SiC$_2$. The relative density of sintered bulk Ti$_3$SiC$_2$ was increased as the hot pressing temperature was increased, which was mainly due to the increase in TiCx contents in synthesized Ti$_3$SiC$_2$. The synthesized Ti$_3$SiC$_2$ bulk was consisted of nano sized lamella structure of 20-100 nm in thickness. It was found that TiCx particles in Ti$_3$SiC$_2$ would increase the 3-point bending strength of synthesized Ti$_3$SiC$_2$ bulk. The maximum 3-P. bending strength of synthesized Ti$_3$SiC$_2$ bulk was more than 800 MPa. The Vickers hardness of synthesized Ti$_3$SiC$_2$bulk was as low as 5 Gpa, which was decreased with the indentation load. The quasi-plastic deformation behaviors were observed around indentation mark on Ti$_3$SiC$_2$.

• Journal of the Korean Ceramic Society
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• v.23 no.1
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• pp.67-73
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• 1986

SiC and $SiC-Si_3N_4$ powder were synthesized via the carbiding and carbiding-nitriding reaction of Jecheon quartz respectively using graphite as a reducing agent. $\beta$-SiC+($\alpha$+$\beta$)-$Si_3N_4$ composite was obtained by the carbiding-nitriding reaction of Jecheon quartz-graphite mixture at 1, 35$0^{\circ}C$ in $H_2$ atmosphere. $\beta$-SiC+($\alpha$+$\beta$)-$Si_3N_4$ composite was obtained by the carbidint-nitriding reaction of Jecheon quartz-graphite mixture at 1, 35$0^{\circ}C$ in $N_2-H_2$ atmosphere. The ratio of $\beta$-SiC+($\alpha$+$\beta$)-$Si_3N_4$ content in a produced composite could be controlled by adjusting the reaction time and gaseous mixture.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.137-137
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• 2008

In-situ doped polycrystalline 3C-SiC thin films were deposited by APCVD at $1200^{\circ}C$ using HMDS(hexamethyildisilane: $Si_2(CH_3)_6)$) as Si and C precursor, and 0 ~ 100 sccm $N_2$ as the dopant source gas. The peak of SiC is appeared in polycrystalline 3C-SiC thin films grown on $SiO_2$/Si substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of polycrystalline 3C-SiC thin films decreased from 8.35 $\Omega{\cdot}cm$ with $N_2$ of 0 sccm to 0.014 $\Omega{\cdot}cm$ with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from $3.0819\times10^{17}$ to $2.2994\times10^{19}cm^{-3}$ and their electronic mobilities increased from 2.433 to 29.299 $cm^2/V{\cdot}S$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.452-455
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.30-34
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyldisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m$/hr. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.493-496
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• 1999

Ni/3C-SiC 옴믹 접합에 대한 미세구조적-접합 특성과의 상관관계를 규명하였다. 3C-SiC 웨이퍼 위에 저저항 전면 옴믹 적합층을 형성하기 위하여 Ni(t=300$\AA$)을 thermal evaporator를 사용하여 증착하고, 50$0^{\circ}C$, 80$0^{\circ}C$, 103$0^{\circ}C$ 온도에서 30분간(Ar 분위기) 열처리 한 후, scratch test를 실행하여 Ni/3C-SiC의 접착력 특성을 조사하였다. 여러 다른 온도에 따른 Ni/3C-SiC 층의 표면과 계면의 미세구조는 X-ray scattering 법을 사용하였다. 50$0^{\circ}C$ 에서 열처리된 Ni/3C-SiC 층은 가장 낮은 계면 평활도와 가장 높은 표면 평활도를 나타내었다. Ni/3C-SiC 접착력 분석에서 500 $^{\circ}C$ 열처리된 시편의 측정된 임계하중 값은 As-deposited 시편(12 N~ 13 N)보다 훨씬 낮은 2 N~3 N 범위의 값을 보였으나, 열처리 온도가 증가함에 따라 다시 높아지는 경향을 보였다. 미세구조 특성에서는 열처리 온도가 500 $^{\circ}C$ 이상에서는 NiSi$_2$silicides의 domain size는 결정성의 향상에 따라 증가되었다. 결정성 향상이 3C-SiC와 silicides 사이의 격자상수의 낮은 불일치를 완화시키는데 기여 하였 다.