• 한국재료학회지
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• 제22권10호
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• pp.562-568
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• 2012

Metal nanowires can be coated on various substrates to create transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these metal nanowire based transparent conductive films is that the resistance between the nanowires is still high because of their low aspect ratio. Here, we demonstrate high-performance transparent conductive films with silver nanofiber networks synthesized by a low-cost and scalable electrospinning process followed by two-step sequential thermal treatments. First, the PVP/$AgNO_3$ precursor nanofibers, which have an average diameter of 208 nm and are several thousands of micrometers in length, were synthesized by the electrospinning process. The thermal behavior and the phase and morphology evolution in the thermal treatment processes were systematically investigated to determine the thermal treatment atmosphere and temperature. PVP/$AgNO_3$ nanofibers were transformed stepwise into PVP/Ag and Ag nanofibers by two-step sequential thermal treatments (i.e., $150^{\circ}C$ in $H_2$ for 0.5 h and $300^{\circ}C$ in Ar for 3 h); however, the fibrous shape was perfectly maintained. The silver nanofibers have ultrahigh aspect ratios of up to 10000 and a small average diameter of 142 nm; they also have fused crossing points with ultra-low junction resistances, which result in high transmittance at low sheet resistance.

• 한국진공학회지
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• 제11권3호
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• pp.183-188
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• 2002

지금까지 주로 사용해 오던 TMA(trimethylaluminum, AI$(CH_3)_3)$와 $H_2O$를 사용하여 ALD(Atomic Layer Deposition)법으로 증착시킨 AI$(CH_3)_3)$막내의 $OH^{-}$기는 AI$(CH_3)_3)$의 우수한 물성을 악화시키는 불순물 역할을 하므로, 이를 개선하기 위하여 본 연구에서는 TMA와 오존(ozone, $O_3$)을 이용하여 AI$(CH_3)_3)$막을 증착한 후, 산화제 소스로 $H_2O$와 $O_3$을 각각 사용했을 때 그것들이 AI$(CH_3)_3)$막의 유전적 특성에 끼치는 효과에 관하여 비교 조사하였다. XPS 분석결과 $O_3$를 사용한 AI$(CH_3)_3)$막은 $H_2O$를 사용할 때와는 다르게 $OH^{-}$기가 감소됨을 관찰할 수 있었다. 화학적 안정성(chemical inertness)의 척도가 되는 wet 에칭율 또한 $O_3$를 사용한 AI$(CH_3)_3)$막의 경우가 더욱 우수하게 나타났다. TiN을 상부전극으로 한 MIS (metal-insulator-silicon) capacitor 구조로 제작된 AI$(CH_3)_3)$막의 경우 $H_2O$를 사용한 경우 보다 $O_3$를 사용한 경우에 누설전류밀도가 더 낮았고, 절연특성이 더 우수하였으며, $H_2O$보다 $O_3$를 사용했을 때 C-V 전기적이력(hystersis) 곡선의 편차(deviation)가 감소하는 것으로 보아 전기적 특성이 더 향상되었음을 알 수 있었다.

• 한국전자파학회논문지
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• 제24권3호
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• pp.310-315
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• 2013

본 논문에서는 전력 케이블의 전파상수를 추출하는 2-port time-domain reflectometry(TDR) 방법을 제안한다. 케이블을 투과하는 펄스 신호를 시간 영역에서 측정하고 주파수 영역에서 분석하여 전파상수를 추출하였다. 22.9 kV 325 $mm^2$ XLPE 케이블의 전파상수를 2.14 GHz까지 추출하고 network analyzer 로 측정한 케이블의 $S_{21}$을 비교하여 2-port TDR 방법의 타당성을 입증하였다. 그 결과, 기존의 TDR 방법보다 측정 가능한 상한 주파수가 증가하고, 고주파수에서 오차가 줄어드는 것을 확인하였다.

• 전기화학회지
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• 제4권4호
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• pp.160-165
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• 2001

황산원자를 포함하는 mercapto화합물은 도금시 전착속도를 증가시키는 첨가제로 알려져 있는데, 이 중 4가지의 mercapto 화합물을 선정하여 농도를 변화시켜가며 Hull cell test, Haring-Blum cell test, cathodic polarization, EQCM(Electrochemical Quartz Crystal Microbalance)등을 이용하여 도금특성 및 throwing power를 알아보았다. Cathode polarization 및 EQCM을 통한 구리 전착량을 알아본 결과 4가지의 mercapto 화합물 중 3-mercapto-1-propanesulfonic acid가 activator로서 가장 적당하였으며, 그 농도가 20 ppm에서 throwing power를 증가시키고, 농도 및 활성 과전압이 오직 $Cl^-$만 포함되었을 때보다 cathodic scan시 100 mV 만큼 shift되어 증착속도를 증가시킴을 알 수 있었다.

• 전기학회논문지P
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• 제55권3호
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• pp.146-152
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• 2006

In order to analyze the characteristics of series arcs that could happen in poor connections of electrical facilities, we made an apparatus which is similar to actual situation. series arcs are generated between copper and copper, copper and bronze, copper and brass, bronze and bronze, and then oxidation growth and voltage waveform were measured. A very small vibration with constant movement is needed to grow oxidation initially, whereas oxidation growth proceeded without a vibration after a certain amount of time. At first, blue white flame was generated initially between copper and copper, and then yellow flame was generated. In case of contact between copper and copper, the length of oxidation growth was about 7.1[mm] in 90[min]. In case of contact between copper and brass, the length of oxidation growth was about 4.3[mm] in 90[min], When bronze is contacted with copper, the lengths of oxidation growth were about 1.4[mm] in 20[min] and 2.7[mm] in 40[min] respectively, and no more oxidation growth was shown after that. In case of contact between brass and brass, the length of oxidation growth was about 1.2[mm] in 90[min], so it was the smallest compared to other cases. When copper is contacted with copper, the current through the load was about 1.6[A] and the power dissipation increased from 19[W] to 31[W]. In case of oxidation growth between copper and brass, the voltage changed from 8.4[V] to 11[V]. However, the voltage drop and the power dissipation between copper and brass were small compared to oxidation growth between copper and copper. When series arcs were generated between bronze and copper, a peak was shown at the beginning of voltage increase, and 40[min] later, oxidation material was not grown any longer. When oxidation growth occurred, voltage waveform showed irregular waveforms with tiny ripples.

• 전기학회논문지
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• 제57권3호
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• pp.398-402
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• 2008

Recently, the development of superconducting fault current limiters (SFCLs) has been required as power demands increase in the power system. A distribution-level prototype resistive SFCL using coated conductor (CC) has been developed by Hyundai Heavy Industries Co., Ltd. and Yonsei University for the first time in the world. The ratings of the SFCL are 13.2kV/630A at normal operating condition. A novel non-inductive winding method is used in fabricating coils so there is almost zero impedance during normal operation. The distribution SFCL is cooled by sub-cooled liquid nitrogen $(LN_2)$ of 65K and 3 bar to enhance cryo-dielectric performance, critical current density, and thermal conductivity. In order to make reliable operation of an SFCL in real power systems, we monitored and controled its operation conditions by using supervisory control and data acquisition (SCADA) method. Thus, a monitoring system for the SFCL employing information technology (IT) is proposed and developed to be on the lookout for the operation conditions such as inside temperature, inside pressure, $LN_2$ level, voltage and current. Since operation temperature should be kept constant, bang-bang control for temperature feedback with a heater attached to the cold head of cryo-cooler is applied to the system. Short-circuit tests with prospective fault current of 10kA and AC dielectric withstand voltage tests up to 143kV for 1 minute were successfully performed at Korea Electrotechnology Research Institute. This paper deals with the development of a distribution level SFCL and its monitoring system for reliable operation.

• 한국세라믹학회지
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• 제16권4호
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• pp.213-224
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• 1979

The present work was undertaken: (1) to determine if CaO-partially stabilized $ZrO_2$ prepared by Hot Petroleum Drying Method would show better ionic conductor as an oxygen sensor in molten metals than that prepared by Oxide Wet Mixing Method and than CaO-fully stabilized $ZrO_2$, and (2) to understand the nature of conduction mechanism of CaO-partially stabilized $ZrO_2$ by a comparison of measured electrical conductivity data with theory on defect structure of pure monoclinic $ZrO_2$ and fully stabilized cubic $ZrO_2$. The DC electrical conductivity was measured by 3-probe technique and the AC electrical conductivity by 2-probe technique as a function of temperature in the range 973-1373 K and oxygen partial pressure in the range 10-1-10-25Mpa. The results of the experiments were as follows: 1. CaO-partially stabilized $ZrO_2$ prepared by Hot petroleum Drying Method showed at T=1094-1285 K and $Po_2$=10-7-10-25 MPa a nearly ionic conduction with 4 times higher conductivity than that prepared by Oxide Wet Mixing Method. 2. High-oxygen pressure conductivity tends toward a Po_2^{+1/5}-Po_2^{+1/6}$dependence. An analysis of possible defect structures suggests that CaO-partially stabilized $ZrO_2$ has an anti-Frenkel defect in which singly or doubly ionized oxygen interstitials and defect electrons predominate at T=1094-1285 K and $Po_2$=10-1-10-7MPa. 3. The activation energy for pure electron hole-conduction and ionic conduction of CaO-partially stabilized $ZrO_2$ was found to be 130 KJ/mol at T=973-1373 K, $Po_2$=2, 127 10-2 MPa(air) and 153KJ/mol at T=1094-1285 K respectively.

• 한국재료학회지
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• 제10권9호
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• pp.624-628
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• 2000

표면 탄성과 디바이스의 전극재료로 사용되는 Al-%Cu(4000$\AA$)/tungsten nitride 박막을 magnetron sputtering 법으로 제조하고 전기저항을 평가한 비정질상의 tungsten nitride 박막을 제조할 수 있었고, 비정질 형성을 위해 질소비(R =$N_2$/(Ar+$N_2$)가 10~40% 정도 필요하다. Tungsten nitride 박막의 잔류응력은 비정질이 형성되면서 급격히 감소되었다. 이러한 비정질 박막위에 Al-1%Cu 합금막이 형성되었다. 다층막은 453K에서 4시간 동안 열처리함으로써 $3.6{\mu}{\Omega}-cm$의 저항을 나타냈는데, 이는 박막내 결정립 성장과 결함의 감소에 기인하였다.

• 폴리머
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• 제31권1호
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• pp.74-79
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• 2007

[ $PPy^+DBS^-$ ] 복합체는 유화중합에 의해 제조되었고 이때 iron(III) chloride($FeCl_3$)는 개시제로, dodecyl benzene sulfonic acid(DBSA)는 계면활성제 및 도판트로 사용되었다. Poly(2,6-dimethyl-1,4-phenylene oxide) (PPO)는 chlorosulfonic acid(CSA)를 사용하여 설폰화되었고 양극은 $PPy^+DBS^-$ 복합체, 도전제 그리고 바인더로 구성되며 이때 바인더로 PPO와 설폰화된 poly (2,6-dimethyl-1,4-phenylene oxide) (SPPO)를 사용하였다. $PPy^+DBS^-/SPPO$ 양극은 $PPy^+DBS^-/PPO$에 비해 약 50% 높은 충 방전 성능을 나타내었는데 이는 SPPO가 바인더뿐만 아니라 도판트로 작용했기 때문이다. 더욱이 바인더로 사용된 고분자의 설폰화는 전도성 고분자와의 coulombic attraction을 유발시켜 두 상간의 혼화성을 증가시켰을 뿐만 아니라 양극과 전해질 사이의 접촉면적을 증가시켜 전기화학적으로 우수한 성능을 나타나게 했다.

• 한국전기전자재료학회논문지
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• 제31권3호
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• pp.165-170
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• 2018

In this study, double-layered TCO (transparent conductive oxide) films were produced by depositing two distinct TCO materials: $SnO_2$ works as an n-type layer and ITO (indium-doped tin oxide) serves as a transparent conductor. Both transparent conductive oxide-films were sequentially deposited by sputtering. The electrical and optical properties of single-layered TCO films ($SnO_2$) and double-layered TCO ($ITO/SnO_2$) films were investigated. A TCO-embedding photodetector was realized through the formation of an $ITO/SnO_2/p-Si/Al$ layered structure. The remarkably high rectifying ratio of 400.64 was achieved with the double-layered TCO device, compared to 1.72 with the single-layered TCO device. This result was attributed to the enhanced electrical properties of the double-layered TCO device. With respect to the photoresponses, the photocurrent of the double-layered TCO photodetector was significantly improved: 1,500% of that of the single-layered TCO device. This study suggests that, due to the electrical and optical benefits, double-layered TCO films are effective for enhancing the photoresponses of TCO photodetectors. This provides a useful approach for the design of photoelectric devices, including solar cells and photosensors.