• 한국표면공학회지
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• 제48권2호
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• pp.33-37
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• 2015

High efficiency LED device is being concerned due to its high heat loss, and such heat loss will cause a shorter lifespan and lower efficiency. Since there is a demand for the materials that can release heat quickly into the external air, the organic insulating layer was required to be replaced with high thermal conductive materials such as metal or ceramics. Through anodizing the upper layer of Al, the Breakdown Voltage of 3kV was obtained by using an uniform thickness of $60{\mu}M$ aluminum oxide($Al_2O_3$) and was carried out to determine the optimum process conditions when thermal cracking does not occur. Two Ni layers were formed above the layer of $Al_2O_3$ by sputtering deposition and electroplating process, and saccharin was added for the purpose of minimizing the remain stress in electroplating process. The results presented that the 3-layer film including the Ni layer has an adhesive force of 10N and the thermal conductivity for heat dissipation is achieved by 150W/mK level, and leads to improvement about 7 times or above in thermal conductivity, as opposed to the organic insulation layer.

• Transactions on Electrical and Electronic Materials
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• 제10권1호
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• pp.28-30
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• 2009

We have studied organic layer-thickness dependent electrical and optical properties of bottom- and top-emission devices. Bottom-emission device was made in a structure of ITO(170 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(100 nm), and a top-emission device in a structure of glass/Al(100 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(25 nm). A hole-transport layer of TPD (N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine) was thermally deposited in a range of 35 nm and 65 nm, and an emissive layer of $Alq_3$ (tris-(8-hydroxyquinoline) aluminum) was successively deposited in a range of 50 nm and 100 nm. Thickness ratio between the hole-transport layer and the emissive layer was maintained to be 2:3, and a whole layer thickness was made to be in a range of 85 and 165 nm. From the current density-luminance-voltage characteristics of the bottom-emission devices, a proper thickness of the organic layer (55 nm thick TPD and 85 nm thick $Alq_3$ layer) was able to be determined. From the view-angle dependent emission spectrum of the bottom-emission device, the peak wavelength of the spectrum does not shift as the view angle increases. However, for the top-emission device, there is a blue shift in peak wavelength as the view angle increases when the total layer thickness is thicker than 140 nm. This blue shift is thought to be due to a microcavity effect in organic light-emitting diodes.

• Current Optics and Photonics
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• 제1권4호
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• pp.389-395
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• 2017

This paper investigates a method to improve the lighting performance of white light-emitting diodes (WLEDs), which are packaged using two separate remote phosphor layers, a yellow-emitting YAG:Ce phosphor layer and a red-emitting ${\alpha}-SrO{\cdot}3B_2O_3:Sm^{2+}$ phosphor layer. The thicknesses of these two layers are $800{\mu}m$ and $200{\mu}m$, respectively. Both of them are examined in conditions where the average correlated color temperatures (CCT) are 7700 K and 8500 K. For this two-layer model, the concentration of red phosphor is varied from 2% to 30% in the upper layer, while in the lower layer the yellow phosphor concentration is kept at 15%. It was found interestingly that the lighting properties such as color rendering index (CRI) and luminous flux are enhanced significantly, while the color uniformity is maintained in a relatively close range to the one of one-layer configuration (measured at the same correlated color temperature). Besides, the transmitted and reflected light of each phosphor layer are revised by combining Kubelka-Munk and Mie-Lorenz theories. Through analysis, it is demonstrated that the packaging configuration of two-layer remote phosphor that employs red-emitting ${\alpha}-SrO{\cdot}3B_2O_3:Sm^{2+}$ phosphor particles provides a practical solution for general WLEDs lighting.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.313-313
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• 2010

The performance of polymer photovoltaic cells based on blends of poly(3-hexylyhiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) is strongly influenced by blend composition and thickness. Polymer photovoltaic cells based on bulk-heterojunction have been fabricated with a structure of ITO/poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)-pentacene/poly (3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM)/Al. We have prepared PEDOT:PSS by dissolving pentacene in N-methylpyrrolidine (NMP) and mixing with PEDOT:PSS. Pentacene was added a maximum concentration of approximately 5.5mg to the PEDOT:PSS solution and sonicated for 10 min. Active layer (P3HT:PCBM) (1:1) was strongly influenced by PEDOT:PSS-pentacene. We have investigated the performance of photovoltaic device with different concentration of P3HT:PCBM (1:1) 2.0wt%, 2.2wt%, 2.4wt% and 2.6wt%, respectively. The photocurrent and power conversion efficiency (PCE) showed a maximum between 2.0wt% and 2.2wt% concentration of P3HT:PCBM. This implied that both morphology and electron transport properties of the layer influenced the performance of the present photovoltaic cells. As the concentration of P3HT:PCBM blends as an active layer was increased, the power conversion efficiency was decreased. P3HT:PCBM layer and PEDOT:PSS-pentacene layer were characterized by work function, UV-visible absorption, atomic force microscopy (AFM), X-ray diffraction (XRD) and scanning electron microscope (SEM).

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제2권4호
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• pp.171-183
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• 2008

Nowadays, wireless packet data services are provided over Wireless MAN (WMAN) at a high data service rate, while 3G cellular networks provide wide-area coverage at a low data service rate. The integration of mobile WiMAX and 3G networks is essential, to serve users requiring both high-speed wireless access as well as wide-area connectivity. In this paper, we propose a cross-layer optimization scheme for a vertical handover between mobile WiMAX and 3G cellular networks. More specifically, L2 (layer 2) and L3 (layer 3) signaling messages for a vertical handover are analyzed and reordered/combined, to optimize the handover procedure. Extensive simulations using ns-2 demonstrate that the proposed scheme enhances the performance of a vertical handover between mobile WiMAX and 3G networks: low handover latency, high TCP throughput, and low UDP packet loss ratio.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.102-105
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• 2011

This work describes the characteristics of zinc oxide (ZnO) thin films formed on a polycrystalline (poly) 3C-SiC buffer layer using a sol-gel process. The deposited ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence (PL) spectra. ZnO thin films grown on the poly 3C-SiC buffer layer had a nanoparticle structure and porous film. The effects of post-annealing on ZnO film were also studied. The PL spectra at room temperature confirmed the crystal quality and optical properties of ZnO thin films formed on the 3C-SiC buffer layer were improved due to close lattice mismatch in the ZnO/3C-SiC interface.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.678-681
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• 2011

We have investigated the effect of organic thin film on the driving voltage of OLED (organic light emitting diode) by inserting a 5 nm thick 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) or triphenylphosphineoxide ($Ph_3PO$) between tris-(8-hydroxyquinoline)aluminum ($Alq_3$) electron transport layer and 4,4'-bis(2,2'-diphyenylvinyl)-1,1'-biphenyl (DPVBi) emission layer. The device with 5 nm thick $Ph_3PO$ layer exhibited higher maximum current efficiency and lower driving voltage than the device with BCP layer, resulting from better electron injection from $Alq_3$ to DPVBi in the device with $Ph_3PO$ layer.

• Korean Chemical Engineering Research
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• 제52권3호
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• pp.340-346
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• 2014

Continuous and dense ZIF-7 membranes were successfully synthesized on ${\alpha}-Al_2O_3$ porous substrate via two-step crystallization technique. ZIF-7 seeding layer was first deposited on porous ${\alpha}-Al_2O_3$ substrate by in-situ low temperature crystallization, and then ZIF-7 membrane layer can be grown through the secondary high-temperature crystallization. Two synthesis solutions with different concentration were used to prepare ZIF-7 seeding layer and membrane layer on porous ${\alpha}-Al_2O_3$ substrate, respectively. As a result, a continuous and defect-free ZIF-7 membrane layer can be prepared on porous ${\alpha}-Al_2O_3$ substrate, as confirmed by scanning electron microscope. XRD characterization shows that the resulting membrane layer is composed of pure ZIF-7 phase without any impurity. A single gas permeation test of $H_2$, $O_2$, $CH_4$ or $CO_2$ was conducted based on our prepared ZIF-7 membrane. The ZIF-7 membrane exhibited excellent H2 molecular sieving properties due to its suitable pore aperture and defect-free membrane layer.

• 지구물리
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• 제3권4호
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• pp.215-226
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• 2000

갈곡단층이 통과하는 경주시 천북목장 부근의 단구면상에서 기반암의 분포를 파악하고, 비교적 규모가 큰 파쇄대를 인지하기 위하여 굴절법 탐사를 실시하였다. 동서방향으로 길이 72m인 측선 1과 남북방향으로 각각 72m, 36m인 측선 2와 3의 굴절파 측선을 따라 5kg의 해머로 발생시킨 지진파를 3m 간격으로 배열된 8Hz 수직지오폰 12개를 이용하여 디지털 방식으로 192ms 기록하였다. GRM 방법으로 해석한 결과, 속도와 두께는 각각 250m/s, 평균 2.1m이며, 표층의 하부에는 속도가 약 $1,030{\sim}1,400m/s$정도이고 두께가 4.6m인 제 4기 후기 자갈층이 존재한다. 이 층의 하부는 기반암으로서 속도 $2,100{\sim}2,200m/s$의 제 3기 흑색 이암이 분포하는 것으로 해석된다. 측선 1과 측선 3의 일부구간은 굴절면의 깊이 차이가 수십 cm 이상으로 나타나 제4기 단층의 존재 가능성을 지시한다. 단구의 상단에 해당하는 측선 1의 동쪽 구간과 측선 3에서는 기반암 굴절파가 기록되지 않은 점으로 보아, 측선 1의 서쪽부분에 대규모 단층이 존재할 가능성이 매우 높다.

• 한국세라믹학회지
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• 제37권4호
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• pp.381-387
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• 2000

Si3N4/stainless steel 316 joints with Ni buffer layer were fabricated by direct active brazing method (DIB) using Ag-Cu-Ti brazing alloy only and double brazing method (DOB) using Ag-Cu brazing alloy with Si3N4 pretreated with Ag-Cu-Ti brazing alloy. For the joint brazed by DIB method, Ti was segregated at the Si3N4/brazing alloy interface, but was not enough to form a stable joint interface. In addition, large amounts of Ni-Ti inter-metallic compounds were formed in tehbrazing alloy near the joint interface, which could deplete the contents of Ti involved in the interfacial reaction. However, for the joint brazed by DOB method, segregation of Ti at the joint interface were enough to enhance the formation of stable interfacial reaction products such as TiN and Ti-Si-Ni-N-(Cu) multicompounds, which restricted the formation of Ni-Tio inter-metallic compounds in the brazing alloy during brazing with Ni buffer layer. Fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was much improved by using DOB method rather than DIB method. It could be deduced that the differences of fracture strength of the joint with Ni buffer layer depending on brazing process adapted were directly affected by the formation of stable joint interface and the change in microstructure of the brazing alloy near the joint interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of Ni buffer layer in the joint was increased from 0.1 mm to 10 mm. It seems to due to the increased residual stress in the joint as the thickness of Ni buffer layer is increased. The maximum fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was 386 MPa, and the fracture of joint was originated at Si3N4/brazing alloy joint interface and propagated into Si3N4 matrix.