• Journal of the Optical Society of Korea
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• 제1권2호
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• pp.116-119
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• 1997

Highly quantum efficient and multi-color emissible polymer light emitting devices have been realized utilizing poly (1-dodecyloxy-4-methyl-1, 3-phenylene)(2, 5"-terthienylene)(hereafter, mPTTh polymer) as an emitting layer and tris(8-hydroxyquinoline) aluminum (Alq3) as an electron transport layer. A single layer EL device of mPTTh polymer emits orange-colored light. EL efficiency increases as the thickness of Alq3 layer increases, but the emission color becomes visually broad when the Alq3 layer thickness is greater than 30nm since the relative peak intensity of green EL from Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer increases. EL efficiency of the double layer device was greatly enhanced by 3000 times compared with that of a single layer device. Alq3 layer in device acts as a hole blocking electron transporting layer and an emitting layer as a function of the thickness of Alq3 layer.ayer.

• Journal of the Korean Wood Science and Technology
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• 제15권3호
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• pp.44-55
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• 1987

In order to study the effect of sawdustboard combined with plastic chips, 0.5mm($T_1$), 1mm($T_2$), 1.4mm($T_3$) thick nylon fiber. polypropylene rope fiber(RP), and 0.23mm thick moth-proof polypropylene net fiber(NP) were cut into 0.5, 1, 2cm long plastic chips. Thereafter, sawdustboard combined with plastic chips prepared as the above and plastic non-combined sawdustboard(control) were manufactured into 3 types of one-, two-, and three layer with 5 or 10% combination level. By the discussions and results at this study, the significant conclusions of mechanical and physical properties were summarized as follows: 1. The MORs were shown in the order of 3 layer> 2 layer> 1 layer among plastic non-combined boards, and $T_3$ < $T_2$ < $T_1$ < RP (NP(5%) < NP(l0%) among plastic combined boards. In 2cm long plastic chip in 1 layer board, the highest strength through all the composition was recognized. 1 layer board showing the lower strength with 0.5cm plastic chip rendered to the bending strength improvement by 2 or 3 layer board composition. On the other hand, 2 or 3 layer combined with 1, 2cm long polypropylene net fiber chips incurred MOR's conspicuous decrease requiring optimum plastic chip combined level and consideration to combined type. 2. MOE in plastic non-combined 3 layer board exhibited sandwich construction effect by higher resin content application to surface layer in the order of 3layer>1layer>2layer with the highest stiffness of the board combined with polypropylene chip, while nylon chip-combined board had little difference from plastic non-combined board. In relevant to length and layer effect, 3 layer board combined with the 0.5cm long polypropylene net fiber chip in 5% and 10% combined level presented 34-43% and 44-76% stiffness increase against plastic non-combined board(control), respectively. Moreover, in 1 layer board, 30% stiffness increase with 10% against 5% combined level in the 1 and 2cm long polypropylene net fiber chip was obtained. 3. Stress at proportional limit(Spl) showing the fiber relationship (r: 0.81-0.97) between MOR presented in the order of 1 layer<2 layer<3 layer in plastic non-combined board. Correspondingly, combined effect by layer and plastic chip length was similar to MOR's. 4. Differently from previous properties(MOR, MOE, Spl). work to maximum load(Wml) of 2 layer board approached to that of 3 layer board. Conforming the above phenomenon. 2 layer combined with 0.5cm long polypropylene net fiber chip kept the greater work than 1 layer. The polypropylene combined board superior to nylon -and plastic non - combined board seemed to have greater anti - failing capacity. 5. Internal bond strength(IB), in contrast to MOR's tendency. showed in the order of T1

• 열처리공학회지
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• 제8권4호
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• pp.289-301
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• 1995

The effect of Air/$C_3H_8$ gas addition on the compound layer growth of steels nitrocarburised in $NH_3+Air+C_3H_8$ mixed gas atmospheres was investigated. It is considered that amount of residual $NH_3$ was varied according to alternation of Air/$C_3H_8$ mixing ratio and volume content. The compound layer formed from nitrocarburising was composed of ${\varepsilon}-Fe_{2-3}$(C, N) and ${\gamma}^{\prime}-Fe_4$(C, N). According as Air/$C_3H_8$ mixing ratio increased, the superficial content of ${\gamma}^{\prime}-Fe_4$(C, N) within the compound layer was increased, at the same time the growth rate of compound layer and porous layer was increased. In the case of alloy steel at the fixed gas composition, the growth rate of compound layer and porous layer was worse than carbon steel and compound layer phase composition structure primarily consisted of E phase. As the carbon content of materials was increasing in the given gas atmospheres, the growth rate of compound layer and porous layer was increased and the superficial content of ${\varepsilon}-Fe_{2-3}$(C, N) within the compound layer was increased.

• 열처리공학회지
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• 제7권3호
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• pp.206-218
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• 1994

In 50%$NH_3+Air+N_2$ atmospheres, the effect of air additions on the growth characteristics of the compound layer during oxynitriding at $570^{\circ}C$ for 2hr in carbon and alloy steels has been investigated. The ammount of apparent residual ammonia during oxynitriding has shown to be increased with air additions(9~36 Vol. %) and X-ray diffraction analysis of case oxynitreded has shown that the compound layer consist of ${\varepsilon}-Fe_{2-3}$(N, C) phase and ${\gamma}^{\prime}-Fe_4$(N,C) phase. In the case of carbon steels, the thickness of oxide layer, compound layer and porous layer and the amount of ${\varepsilon}-Fe_{2-3}$(N,C) phase in the compound layer were increased with additions of air in 50%$NH_3+N_2$ atmospheres. At the same gas composition, the thickenss of oxide layer, compound layer and porous layer in alloy steels showed slightly thin layer thickness compared to those of carbon steels and the ${\gamma}^{\prime}-Fe_4$(N,C) phase in the compound layer of alloy steels was found barely. Therefore, the most obvious effect of air addition in the gas nitriding atmosphere has been found to in crease further kinetics of nitriding reaction.

• Transactions on Electrical and Electronic Materials
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• 제13권2호
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• pp.60-63
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• 2012

Enhancement of efficiency and luminance of organic light-emitting diodes was investigated by the introduction of a lithium carbonate ($Li_2CO_3$) electron-injection layer. Electron-injection layer is used in organic light-emitting diodes to inject electrons efficiently between a cathode and an organic layer. A device structure of ITO/TPD (40 nm)/$Alq_3$ (60 nm)/$Li_2CO_3$ (x nm)/Al (100 nm) was manufactured by thermal evaporation, where the thickness of $Li_2CO_3$ layer was varied from 0 to 3.3 nm. Current density-luminance-voltage characteristics of the device were measured and analyzed. When the thickness of $Li_2CO_3$ layer is 0.7 nm, the current efficiency and luminance of the device at 8.0 V are improved by a factor of about 18 and 3,000 compared to the ones without the $Li_2CO_3$ layer, respectively. The enhancement of efficiency and luminance of the device with an insertion of $Li_2CO_3$ electron-injection layer is thought to be due to the lowering of an electron barrier height at the interface region between the cathode and the emissive layer. This is judged from an analysis of current density-voltage characteristics with a Fowler-Nordheim tunneling conduction mechanism model. In a study of lifetime of the device that depends on the thickness of $Li_2CO_3$ layer, the optimum thickness of $Li_2CO_3$ layer was obtained to be 1.1 nm. It is thought that an improvement in the lifetime is due to the prevention of moisture and oxygen by $Li_2CO_3$ layer. Thus, from the efficiency and lifetime of the device, we have obtained the optimum thickness of $Li_2CO_3$ layer to be about 1.0 nm.

• 센서학회지
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• 제9권5호
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• pp.389-395
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• 2000

본 논문에서는 보호용 실리콘 산화층과 Al 층을 이용한 $Al_2O_3$ 예비층의 형성을 제안하였다. 실리콘 기판 위의 보호용 산화막 위에 알루미늄을 증착하고 이를 $800^{\circ}C$에서 열처리함으로써 에피텍시 $Al_2O_3$ 예비층 형성시킬 수 있었다. 그리고 형성된 $Al_2O_3$ 예비층위에 ${\gamma}-Al_2O_3$ 층을 형성하였다. ${\gamma}-Al_2O_3$막 성장시 공정의 초기 상태에서 발생하는 $N_2O$ 가스에 의한 Si 기판의 식각을 $Al_2O_3$ 예비층을 이용함으로써 방지할 수 있었다. $Al_2O_3$ 예비층이 초박막 ${\gamma}-Al_2O_3$의 표면의 형태를 개선하는데 많은 효과가 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.61.2-61.2
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• 2015

In the past decades, green energy, such as solar energy, wind power, hydropower, biomass energy, geothermal energy, and so on, has been widely investigated and developed to solve energy shortage. Recently, organic solar cells have attracted much attention, because they have many advantages, including low-cost, flexibility, light weight, and easy fabrication [1-3]. Organic solar cells are as a potential candidate of the next generation solar cells. In this abstract, to improve the power conversion efficiency and the stability, the inverted polymer solar cells with various structures were developed [4-6]. The novel cell structures included the P3HT:PCBM inverted polymer solar cells with AZO nanorods array, with pentacene-doped active layer, and with extra P3HT interfacial layer and PCBM interfacial layer. These three difference structures could respectively improve the performance of the P3HT:PCBM inverted polymer solar cells. For the inverted polymer solar cells with AZO nanorods array as the electronic transportation layer, by using the nanorod structure, the improvement of carrier collection and carrier extraction capabilities could be expected due to an increase in contact area between the nanorod array and the active layer. For the inverted polymer solar cells with pentacene-doped active layer, the hole-electron mobility in the active layer could be balanced by doping pentacene contents. The active layer with the balanced hole-electron mobility could reduce the carrier recombination in the active layers to enhance the photocurrent of the resulting inverted polymer solar cells. For the inverted polymer solar cells with extra P3HT and PCBM interfacial layers, the extra PCBM and P3HT interfacial layers could respectively improve the electron transport and hole transport. The extra PCBM interfacial layer served another function was that led more P3HT moving to the top side of the absorption layer, which reduced the non-continuous pathways of P3HT. It indicated that the recombination centers could be further reduced in the absorption layer. The extra P3HT interfacial layer could let the hole be more easily transported to the MoO3 hole transport layer. The high performance of the novel P3HT:PCBM inverted polymer solar cells with various structures were obtained.

• 대한토목학회논문집
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• 제39권4호
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• pp.493-503
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• 2019

산성배수 비탈면의 중화층 종류에 따른 녹화 효과를 알아보고자 9개의 실험구 [대조구: "무처리층+식생층 3 cm", 실험1구: "무처리층+식생층 5 cm", 실험2구: "무처리층+식생층 7 cm", 실험3구: "중화층(cement 3 %)+식생층(cement 1 %) 3 cm", 실험4구: "중화층(cement 3 %)+식생층(cement 1 %) 5 cm", 실험5구: "중화층(cement 3 %) + 식생층(cement 1 %) 7cm", 실험6구: "중화층[$(Ca{\cdot}Mg)CO_3$]+식생층 3 cm", 실험7구: "중화층[$(Ca{\cdot}Mg)CO_3$]+식생층 5 cm", 실험8구: "중화층[$(Ca{\cdot}Mg)CO_3$]+식생층 7 cm"]를 조성하였다. 중화층 종류에 따른 표면경도 및 함수율의 유의차이는 없었으나 두께에 따른 함수율의 차이는 있었다. 토양산도(pH)는 중화제를 처리하지 않은 실험구(대조구, 실험1구, 실험2구)에서 높게 나타났고, 시멘트를 배합한 실험구(실험3구, 실험4구, 실험5구)와 석회고토를 배합한 실험구(실험6구, 실험7구, 실험8구)에서 중화효과가 크게 나타났다. 식물생육 특성은 지면피복율, 목본류 발아개체수 및 수고, 식물 뿌리상태 등이 시멘트를 배합한 실험구 및 석회고토를 배합한 실험구에서 우수했으나 시멘트를 배합한 실험구는 초기 식물 뿌리생장에 좋지 못한 결과가 나타나 주의가 요구된다. 또한, 산성배수 비탈면의 중화층 두께에 따른 차이는 없었으며 경제성을 고려할 때 3~5 cm가 적정할 것으로 판단된다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(1)
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• pp.441-444
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• 2000

This paper covers the performance testing for layer 3 Ethernet switch based on various methodologies by which we can measure essential metrics such as throughput, latency, frame loss rate, and back to back frames. In the first place, layer 2 and layer 3 switch evolution is introduced followed by description of IP packet switching in layer 3 switch. And then, the above test metrics and test methodologies are illustrated as well. At last, we conduct the performance testing for layer 3 switch in case of transmitting packets of 64, 128, 256, 512, 1024, 1280, and 1518 byte size and analyze then results.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2007년도 학술대회
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• pp.336-340
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• 2007

This paper proposes a multicast scheme over IEEE 802.16 networks which support multiple upper layer protocols such as ATM, IPv4 packets, IPv6 packets, IEEE 802.3 over IPv4 and so on. The multicast capabilities over IEEE 802.16 are important both control plane and data plane. The proposed multicast scheme can be divided into two types: direct mapping and indirect mapping. The direct mapping scheme is that layer 3 address is directly mapped into CID information which is used for connection identifier at IEEE 802.16 link layer. The indirect mapping scheme has two steps for mapping between layer 3 address and layer 2 CID. Firstly, a layer 3 address translates to Ethernet MAC address with group MAC address. Secondly, a group MAC address is mapped into CID. The mapping scheme depends on the upper layer protocols.