• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.687-698
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• 2001

This paper presents a three dimensional stacked pad area away (PAA) package configuration as an implementation method of radio frequency (RF) circuits. 224MHz RF circuits of intelligence traffic system(ITS) were constructed with the stacked PAA RF pakage configuration. In the process of manufacturing the stacked PAA RF pakage, RF circuits were partitioned to subareas following their function and operating frequency. Each area of circuits separated to each subunits. The operating characteristics of RF PAA package module and the electrical properties of each subunits were examined. The measurement of electrical parameters for solder balls which were interconnects for stacked PAA RF packages showed that the parasitic capacitance and inductance were 30fF and 120pH, respectively, which might be negligible in PAA RF packaging system. HP 4396B network/spectrum analyzer revealed that the amplification gain of a receiver and transmitter at 224 MHz was 22dB and 27dB, respectively. The gain was 3dB lower than designed values. The difference was probably generated from fabrication process of the circuits by employing commercial standard

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.61-66
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• 2010

Cu-Cu thermo-compression bonding process was successfully developed as functions of the deposited Cu thickness and $Ar+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the interfacial toughness was measured by 4-point bending test. Pre-annealing with $Ar+H_2$ gas at $300^{\circ}C$ is effective to achieve enough interfacial adhesion energy irrespective of Cu film thickness. Successful Cu-Cu bonding process achieved in this study results in delamination at $Ta/SiO_2$ interface rather than Cu/Cu interface.